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1.
Ultramicroscopy ; 264: 113996, 2024 Oct.
Artigo em Inglês | MEDLINE | ID: mdl-38885602

RESUMO

With the recent progress in the development of detectors in electron microscopy, it has become possible to directly count the number of electrons per pixel, even with a scintillator-type detector, by incorporating a pulse-counting module. To optimize a denoising method for electron counting imaging, in this study, we propose a Poisson denoising method for atomic-resolution scanning transmission electron microscopy images. Our method is based on the Markov random field model and Bayesian inference, and we can reduce the electron dose by a factor of about 15 times or further below. Moreover, we showed that the method of reconstruction from multiple images without integrating them performs better than that from an integrated image.

2.
ACS Nano ; 2024 Jul 22.
Artigo em Inglês | MEDLINE | ID: mdl-39038184

RESUMO

Here, we demonstrate the production of 2D nanosheets of arsenic disulfide (As2S3) via liquid-phase exfoliation of the naturally occurring mineral, orpiment. The resultant nanosheets had mean lateral dimensions and thicknesses of 400 and 10 nm, and had structures indistinguishable from the bulk. The nanosheets were solution mixed with carbon nanotubes and cast into nanocomposite films for use as anodes in potassium-ion batteries. These anodes exhibited outstanding electrochemical performance, demonstrating an impressive discharge capacity of 619 mAh/g at a current density of 50 mA/g. Even after 1000 cycles at 500 mA/g, the anodes retained an impressive 94% of their capacity. Quantitative analysis of the rate performance yielded a capacity at a very low rate of 838 mAh/g, about two-thirds of the theoretical capacity of As2S3 (1305 mAh/g). However, this analysis also implied As2S3 to have a very small solid-state diffusion coefficient (∼10-17 m2/s), somewhat limiting its potential for high-rate applications.

3.
Science ; 385(6708): 549-553, 2024 Aug 02.
Artigo em Inglês | MEDLINE | ID: mdl-39088619

RESUMO

An ever-present limitation of transmission electron microscopy is the damage caused by high-energy electrons interacting with any sample. By reconsidering the fundamentals of imaging, we demonstrate an event-responsive approach to electron microscopy that delivers more information about the sample for a given beam current. Measuring the time to achieve an electron count threshold rather than waiting a predefined constant time improves the information obtained per electron. The microscope was made to respond to these events by blanking the beam, thus reducing the overall dose required. This approach automatically apportions dose to achieve a given signal-to-noise ratio in each pixel, eliminating excess dose that is associated with diminishing returns of information. We demonstrate the wide applicability of our approach to beam-sensitive materials by imaging biological tissue and zeolite.

4.
Nat Commun ; 15(1): 278, 2024 Jan 04.
Artigo em Inglês | MEDLINE | ID: mdl-38177181

RESUMO

Networks of solution-processed nanomaterials are becoming increasingly important across applications in electronics, sensing and energy storage/generation. Although the physical properties of these devices are often completely dominated by network morphology, the network structure itself remains difficult to interrogate. Here, we utilise focused ion beam - scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterise the morphology of printed nanostructured networks and their devices using nanometre-resolution 3D images. The influence of nanosheet/nanowire size on network structure in printed films of graphene, WS2 and silver nanosheets (AgNSs), as well as networks of silver nanowires (AgNWs), is investigated. We present a comprehensive toolkit to extract morphological characteristics including network porosity, tortuosity, specific surface area, pore dimensions and nanosheet orientation, which we link to network resistivity. By extending this technique to interrogate the structure and interfaces within printed vertical heterostacks, we demonstrate the potential of this technique for device characterisation and optimisation.

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