High-performance monolayer MoS2nanosheet GAA transistor.

In this article, a 0.7 nm thick monolayer MoS2nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κmetal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410µAµm-1with a large on/off ratio of 6 × 108at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩµm in monolayer MoS2NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.

Direct formation of anatase TiO2 nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties.

TiO2 with different morphology was deposited on acid-treated multi-walled carbon nanotubes (CNTs) by atomic layer deposition at 100 °C-300 °C to form a TiO2@CNT structure. The TiO2 fabricated at 100 °C was an amorphous film, but became crystalline anatase nanoparticles when fabricated at 200 °C and 300 °C. The saturation growth rates of TiO2 nanoparticles at 300 °C were about 1.5 and 0.4 Å/cycle for substrate-enhanced growth and linear growth processes, respectively. It was found that the rate constants for methylene blue degradation by the TiO2@CNT structure formed at 300 °C were more suitable to fit with second-order reaction. The size of 9 nm exhibited the best degradation efficiency, because of the high specific area and appropriate diffusion length for the electrons and holes.

Head-up display using an inclined Al2O3 column array.

An orderly inclined Al2O3 column array was fabricated by atomic layer deposition and sequential electron beam evaporation using a hollow nanosphere template. The transmittance spectra at various angles of incidence were obtained through the use of a Perkin-Elmer Lambda 900 UV/VIS/NIR spectrometer. The inclined column array could display the image information through a scattering mechanism and was transparent at high viewing angles along the deposition plane. This characteristic of the inclined column array gives it potential for applications in head-up displays in the automotive industry.

Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors.

The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (VT) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range VT tunability in ultrathin In2O3. This method can achieve both positive and negative VT tuning and is reversible. The modulation of sheet carrier density, which corresponds to VT shift, is comparable to that obtained using other doping and capacitive charging techniques in other ultrathin transistors, including 2D semiconductors. With the controllability of VT, we successfully demonstrate the realization of depletion-load inverter and multi-state logic devices, as well as wafer-scale VT modulation via an automated laser system, showcasing its potential for low-power circuit design and non-von Neumann computing applications.

Fabrication of TiO2 nanotubes by atomic layer deposition and their photocatalytic and photoelectrochemical applications.

The formation of TiO(2) nanotubes was conducted by atomic layer deposition (ALD) with tris-(8-hydroxyquinoline) gallium (GaQ(3)) nanowires as a template at different substrate temperatures, 50, 100, and 200 °C. TiO(2) nanotubes were formed only at 50 and 100 °C. Although a higher growth rate at 50 °C was observed, nanotubes with better uniformity, conformality, and less residual chloride were obtained at 100 °C because of a different formation mechanism. A photocatalysis test of TiO(2) nanotubes prepared by different cycle numbers at 100 °C was conducted. It showed that TiO(2) nanotubes prepared by 400 cycles of ALD and treated at 700 °C for 1 h to form anatase phase had the best photocatalytic performance. Compared with P-25, the nanotubes showed higher photocatalytic degradation of rhodamine B and water splitting efficiency.

Photocatalytic degradation of rhodamine B by anchored TiO2 nanowires.

Rutile TiO2 nanowires anchored on silica were fabricated by annealing TiO2 nanoparticles dispersed on silicon or quartz substrate by means of a polystyrene nanosphere monolayer template at 1000 degrees C for 1 h without any catalyst. The diameter and length of the nanowires were 30-80 nm and 1-3 microm, respectively. The growth direction of the nanowires is [112]. The photocatalytic activities of TiO2 nanoparticles and anchored nanowires were evaluated. TiO2 nanowires had higher photocatalytic activity for rhodamine B than TiO2 nanoparticles.

Microstructure and optical properties of Al2O3 prepared by oblique deposition using microsphere shell templates.

We fabricated an orderly inclined Al2O3 column array using a hollow microsphere template. The microstructure and optical properties were investigated with scanning electron micrography and a UV/VIS spectrometer, respectively. Microsphere shell templates were formed using atomic layer deposition to prevent the melting of polystyrene microspheres during the following high-temperature deposition process. An inclined Al2O3 column array with a 30° tilt angle was grown by oblique deposition on a substrate with a 75.5° tilt angle with respect to the substrate normal. Birefringence and photonic crystalline behavior can be observed in the orderly inclined column array. The difference in the refractive indices between the p and s polarizations of the orderly inclined Al2O3 column array was about 0.1. The photonic properties of the crystal were enhanced compared to those of substrates without patterns.

The formation of TiO(2) nanowires directly from nanoparticles.

TiO(2) nanowires were fabricated by annealing TiO(2) nanoparticles on silicon substrate at 1000 degrees C in air. When a polystyrene nanosphere monolayer was used as a template to separate the TiO(2) nanoparticles, they could more easily react with the silicon substrate to form Ti(5)Si(3). The TiO(2) nanowires were formed upon further oxidation of Ti(5)Si(3). The diameters and lengths of TiO(2) nanowires were 30-80 nm and 1-3 microm, respectively. The nanowires had a rutile structure with the growth direction [112]. It is believed that the formation of TiO(2) nanowires involved a precipitation process in the mixture of SiO(2) and TiO(2). The nanowires show different photoluminescence behavior from that of the powder.

Forced flow atomic layer deposition of TiO2 on vertically aligned Si wafer and polysulfone fiber: Design and efficacy of conduit plates and soak function.

The effectiveness of three different designs of conduit plates was verified for even distribution of precursors in a voluminous forced-flow atomic layer deposition (ALD) chamber designed to hold macroscopic elongated substrates vertically. Furthermore, a new "soak function" was introduced in the controlling software of the ALD instrument. This function enabled increase in residence time of the precursor in the chamber without escalating the dosage. The flow of precursors guided by the conduit plates with and without application of the soak function was simulated using computational fluid dynamics. A conformal coating of TiO2 with good uniformity on Si and porous polysulfone fibers was achieved to evidence the design and efficacy of conduit plates and soak function.

Uniform coating of Ta2O5 on vertically aligned substrate: A prelude to forced flow atomic layer deposition.

Uniform tantalum oxide thin films, with a growth rate of 0.6 Å/cycle, were fabricated on vertically aligned, 10 cm-long, silicon substrates using an innovative atomic layer deposition (ALD) design. The ALD system, with a reaction chamber depth of 13.3 cm and 18 vertical enclosed channels (inner diameter 1.3 cm), was coupled with a shower-head type precursor conduit plate bearing 6 radial channels. This design enabled deposition on 6 silicon substrates at a time. The degrees of non-uniformity of deposits along the length of the silicon wafer and across different positions in the ALD chamber were found to be 1.77%-6.21% and 3.27%-5.45%, respectively. A further advantage of the design is that the conduit plate may be modified and the number of channels increased to process 18 substrates simultaneously, thus moving toward efficient and expedited ALD systems.

Deposition of platinum on oxygen plasma treated carbon nanotubes by atomic layer deposition.

Platinum nanoparticles were deposited on oxygen plasma treated carbon nanotubes (CNTs) by atomic layer deposition (ALD). The treatment time with oxygen plasma generated by microwaves under a power of 600 W varied from 5 to 20 s. The number of ALD cycles was controlled at 5-125. X-ray photoelectron spectroscopic analysis indicated that oxygen plasma can graft oxygen-containing functional groups to the CNT surface to act as nucleation sites for growth of Pt nanoparticles. Formation of very uniform and well distributed Pt nanoparticles of a size of 1.60-4.80 nm was achieved. The growth rate of Pt nanoparticles could be controlled by the number of ALD cycles and oxygen plasma treatment time. This offers a dry process to deposit well-dispersed metallic nanoparticles on selected support materials.

Organic nanowire-templated fabrication of alumina nanotubes by atomic layer deposition.

Alumina nanotubes were fabricated by a template method. Tris-(8-hydroxyquinoline) gallium (GaQ3) organic nanowires were used as a soft template for coating with alumina using an atomic layer deposition technique. The deposition was conducted at 25 degrees C by using trimethylaluminum and distilled water as the precursors of Al2O3. Amorphous alumina nanotubes were obtained after removing the GaQ3 by dissolving in toluene or by heat treatment at 350 degrees C. The amorphous nanotubes could be crystallized by heating at 900 degrees C for 1 h in vacuum.