2.1 THz quantum-cascade laser operating up to 144 K based on a scattering-assisted injection design.

A 2.1 THz quantum cascade laser (QCL) based on a scattering-assisted injection and resonant-phonon depopulation design scheme is demonstrated. The QCL is based on a four-well period implemented in the GaAs/Al0.15Ga0.85As material system. The QCL operates up to a heat-sink temperature of 144 K in pulsed-mode, which is considerably higher than that achieved for previously reported THz QCLs operating around the frequency of 2 THz. At 46 K, the threshold current-density was measured as ∼ 745 A/cm2 with a peak-power output of ∼10 mW. Electrically stable operation in a positive differential-resistance regime is achieved by a careful choice of design parameters. The results validate the robustness of scattering-assisted injection schemes for development of low-frequency (ν < 2.5 THz) QCLs.

Proposal for a broadband THz refractive-index sensor based on quantum-cascade laser arrays.

Many molecules have strong and characteristic rotational and vibrational transitions at terahertz (THz) frequencies, which makes this frequency range unique for applications in spectroscopic sensing of chemical and biological species. Here, we propose a broadband THz sensor based on arrays of single-mode QCLs, which could be utilized for sensing of the refractive-index of solids or liquids in reflection geometry. The proposed scheme does not require expensive THz detectors and consists of no movable parts. A recently developed antenna-feedback geometry is utilized to enhance optical coupling between two single-mode QCLs, which facilitates optical downconversion of the THz frequency signal to microwave regime. Arrays of THz QCLs emitting at discrete frequencies could be utilized to provide more than 2 THz of spectral coverage to realize a broadband, low-cost, and portable THz sensor.

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers.

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1-3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.