Selective removal of alkynes from diene mixtures using ether-functionalized Cu(i)-containing ionic liquids as extractants.

Cu(i)-Containing room temperature ionic liquids (Cu-EnA), prepared from CuCl and ether-functionalized ionic liquids (ILs) bearing a methanesulfonate anion (EnA, n = 1, 2 or 3), were thermally stable and highly effective for the removal of alkynes such as isopropenylacetylene (IPA) and 2-butyne (2-BT) contained in dienes like isoprene (2-methyl-1,3-butadiene). Cu-EnA were found to reversibly and selectively interact with IPA and 2-BT, thereby enabling the regeneration of Cu-EnA. Fast atom bombardment (FAB)-mass spectral and computational results imply that EnA consists of an ether-functionalized imidazolium cation and a methanesulfonate-coordinated Cu(i) anion such as [CuCl(CH3SO3)]- ([CuClA]-) or [Cu(CH3SO3)2]- ([CuA2]-). Computational studies demonstrate that the preferential extraction of IPA and 2-BT to isoprene by Cu-EnA originated from the difference in the strength of the hydrogen bonding and π-complexation.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

On Why the Two Polymorphs of NaFePO4 Exhibit Widely Different Magnetic Structures: Density Functional Analysis.

Triphylite-NaFePO4 is a cathode material for Na(+)-ion batteries, whereas its alternative polymorph maricite-NaFePO4 is not. These two different polymorphs exhibit widely different magnetic structures; the ordered magnetic structure of triphylite-NaFePO4 below ∼50 K is described by the propagation vector q1 = (0, 0, 0) with collinear spins, and that of maricite-NaFePO4 below ∼13 K is described by q2 = (1/2, 0, 1/2) with noncollinear spins. We probed the causes for these differences by calculating the spin exchange interactions of the two polymorphs and determining the preferred orientations of their high-spin Fe(2+) (d(6), S = 2) ions on the basis of density functional calculations. Our study shows that maricite-NaFePO4 is not spin-frustrated, which is also the case for triphylite-NaFePO4, that the ordered magnetic structure of triphylite-NaFePO4 is determined mainly by spin exchange, whereas that of maricite-NaFePO4 is determined by both spin exchange and magnetic anisotropy, and that the preferred spin orientations in the two polymorphs can be explained by perturbation theory using spin-orbit coupling as the perturbation.

CO2 absorption and desorption in an aqueous solution of heavily hindered alkanolamine: structural elucidation of CO2-containing species.

The pathways for the CO2 absorption and desorption in an aqueous solution of a heavily hindered alkanolamine, 2-(t-butylamino)ethanol (TBAE) were elucidated by X-ray crystallographic and (13)C NMR spectroscopic analysis. In the early stage of the CO2 absorption, the formation of carbonate species ([TBAEH]2CO3) was predominant, along with the generation of small amounts of zwitterionic species. With the progress of the absorption, the carbonate species was rapidly transformed into bicarbonate species ([TBAEH]HCO3), and the amounts of the zwitterionic species increased gradually. During desorption at elevated temperature in the absence of CO2, [TBAEH]HCO3 was found to transform into [TBAEH]2CO3, where CO3(2-) strongly interacts with two [TBAEH](+) via hydrogen bondings.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting.

Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.

High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates.

A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ~1 mm × 1 mm to ~25 µm × 25 µm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.

Ionic-liquid-derived, water-soluble ionic cellulose.

A new type of water-soluble ionic cellulose was obtained by means of the dissolution of cellulose in dimethylimidazolium methylphosphite at elevated temperatures over 120 °C. FTIR spectroscopy, (1)H and (13)C NMR spectroscopy, and elemental analysis results revealed that the repeating unit of the water-soluble cellulose consists of a dialkylimidazolium cation and a phosphite anion bonded to cellulose. The degree of phosphorylation on the cellulose chain was between 0.4 and 1.3 depending on the reaction temperature and time. With an increasing degree of phosphorylation, water solubility was increased. Scanning electron microscopy and X-ray diffraction analyses revealed that the cellulose crystalline phase in the parent crystalline cellulose changed to an amorphous phase upon transformation into ionic cellulose. Thermogravimetric analysis showed the prepared phosphorylated cellulose was stable over 250 °C and a substantial amount of residue remained at 500 °C.

Two-dimensional infrared correlation spectroscopy and principal component analysis on the carbonation of sterically hindered alkanolamines.

Despite the academic and industrial importance of the chemical reaction between carbon dioxide (CO(2)) and alkanolamine, the delicate and precise monitoring of the reaction dynamics by conventional one-dimensional (1D) spectroscopy is still challenging, due to the overlapped bands and the restricted static information. Herein, we report two-dimensional infrared correlation spectroscopy (2D IR COS) and principal component analysis (PCA) on the reaction dynamics of a sterically hindered amine, 2-[(1,1-dimethylethyl)amino]ethanol (TBAE) and CO(2). The formation of carbonate rather than carbamate species, which contribute to the unusual high working capacity of ∼1 mole CO(2) per mole of TBAE at 40 °C, occurs through deprotonation of the hydroxyl group, protonation on the nitrogen atom of the amino group, and formation of a carbonate species due to the steric hindrance of the tert-butyl group. In particular, PCA captures the chemical transition into a carbonate species and the main contributions of ν(CO(2)), ν(OH), ν(C - N), and ν(C=O) bands to the carbonation, while 2D IR COS verifies the interrelation of four bands and their changes. Therefore, these results provide a powerful analytic method to understand the complex and abnormal reaction dynamics as well as the rational design strategy for the CO(2) absorbents.

Stretchable, transparent graphene interconnects for arrays of microscale inorganic light emitting diodes on rubber substrates.

This paper describes the fabrication and design principles for using transparent graphene interconnects in stretchable arrays of microscale inorganic light emitting diodes (LEDs) on rubber substrates. We demonstrate several appealing properties of graphene for this purpose, including its ability to spontaneously conform to significant surface topography, in a manner that yields effective contacts even to deep, recessed device regions. Mechanics modeling reveals the fundamental aspects of this process, as well as the use of the same layers of graphene for interconnects designed to accommodate strains of 100% or more, in a completely reversible fashion. These attributes are compatible with conventional thin film processing and can yield high-performance devices in transparent layouts. Graphene interconnects possess attractive features for both existing and emerging applications of LEDs in information display, biomedical systems, and other environments.

Binding of uranyl ion by a DNA aptamer attached to a solid support.

A UO(2)(2+)-specific DNA aptamer was attached to aminopolystyrene (aminoPS) using sulfo-SMCC as a crosslinking agent in view of high affinity of DNA for uranyl ion. Capacity of the aptamer-conjugated aminoPS resins for uranyl uptake was measured, revealing that about 0.63 µg of uranium can be complexed to 1g of the resins, which clearly demonstrates that most of DNA aptamers introduced to the resins can strongly bind to uranyl ion. In the presence of 21 mM bicarbonate ion at pH 8.01, apparent dissociation constant (K(d)(app)) of about 84.6 pM and log formation constant (K(f)) of about 22.9 were obtained. Results of the present study strongly suggest that modification of the aptamer-containing resins can improve uranyl-binding ability, probably leading to economical recovery of uranium from seawater.

Ionic liquid-assisted carboxylation of amines by CO2: a mechanistic consideration.

The catalytic roles of ionic liquids (ILs) in the syntheses of 1,3-disubstituted ureas from the carboxylation of amines by CO(2) were experimentally and theoretically investigated. The carboxylation reaction of n-butylamine was greatly facilitated by the presence of an IL and the catalytic activity of the IL was strongly affected by the nucleophilicity of the anion. Computational study on the mechanistic aspects of the carboxylation with methylamine with or without the presence of an IL, 1-ethyl-3-methylimidazolium chloride, implies that the activation energies of the transition states and the intermediate ionic species could be lowered significantly through the multi-interactions of the carbonyl group of CO(2) with both cations and anions of the ILs.

Radio frequency analog electronics based on carbon nanotube transistors.

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations.

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximately 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximately 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Spectroscopic and computational insight into the intermolecular interactions between Zwitter-type ionic liquids and water molecules.

Geometric and conformational changes of zwitter-type ionic liquids (ZILs) due to hydrogen-bonding interactions with water molecules are investigated by density functional theory (DFT), two-dimensional IR correlation spectroscopy (2D IR COS), and pulsed-gradient spin-echo NMR (PGSE NMR). Simulation results indicate that molecular structures in the optimized states are strongly influenced by hydrogen bonding of water molecules with the sulfonate group or imidazolium and pyrrolidinium rings of 3-(1-methyl-3-imidazolio)propanesulfonate (1) and 3-(1-methyl-1-pyrrolidinio)propanesulfonate (2), respectively. Concentration-dependent 2D IR COS reveals kinetic conformational changes of the two ZIL-H(2)O systems attributable to intermolecular interactions, as well as the interactions of sulfonate groups and imidazolium or pyrrolidinium rings with water molecules. The dramatic changes in the (1)H self-diffusion coefficients elucidate the formation of proton-conduction pathways consisting of ZIL networks. In ZIL domains, protons are transferred by a Grotthuss-type mechanism through formation, breaking, and restructuring of bonds between ZILs and H(2)O, leading to an energetically favorable state. The simulation and experimental investigations delineated herein provide a perspective to understanding the interactions with water from an academic point of view as well as to designing ILs with desired properties from the viewpoint of applications.

Cu(I)-containing room temperature ionic liquids as selective and reversible absorbents for propyne.

A Cu(i)-containing room temperature ionic liquid (Cu-RTIL), prepared from CuCl and 1,3-dimethylimidazolium methylphosphite ([DMIM][MeHPO(3)]), was found to reversibly and selectively interact with propyne over propylene. Cu-RTIL exhibited 12 times higher propyne absorption capacity and 14 times higher ideal propyne/propylene selectivity than [DMIM][MeHPO(3)]. Fast atom bombardment (FAB)-mass spectral and computational results with Cu-RTIL (CuCl/[DMIM][MeHPO(3)] = 1/2) strongly imply that the Cu-RTIL contains stable methylphosphite-coordinated anionic Cu(i) species such as CuCl(MeHPO(3))(-) and Cu(MeHPO(3))(2)(-). Computational studies on the optimized structures demonstrate that the preferential absorption of propyne over propylene in a Cu-RTIL originates from the difference in the interaction mode between the coordinated phosphite ligand and propyne or propylene. Strong π-complexation of propylene and propyne with Cu in Cu-RTIL is not observed.

Selective removal of acetylenes from olefin mixtures through specific physicochemical interactions of ionic liquids with acetylenes.

Imidazolium-based ionic liquids (ILs) bearing an alkylphosphite anion, were highly efficient for the selective removal of acetylenes in olefins. Comparison of solubility data at 313 K and at atmospheric pressure shows that the solubilities of acetylene and propyne in 1,3-dimethylimidazolium methylphosphite ([DMIM][MeHPO(3)]) are about 45 and 20 times higher than those of ethylene and propylene, respectively. Computational and (1)H NMR results clearly demonstrate that there are substantial interactions between the acidic hydrogen atom or atoms of acetylenes and the phosphite anion.

High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes.

The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use individual tubes, and they also enable comprehensive experimental and theoretical evaluation of the intrinsic properties. Thus, devices consisting of arrays represent a practical route to use of SWNTs for RF devices and circuits. The results presented here reveal many aspects of device operation in such array layouts, including full compatibility with conventional small signal models of RF response. Submicrometer channel length devices show unity current gain (f(t)) and unity power gain frequencies (f(max)) as high as approximately 5 and approximately 9 GHz, respectively, with measured scattering parameters (S-parameters) that agree quantitatively with calculation. The small signal models of the devices provide the essential intrinsic parameters: saturation velocities of 1.2 x 10(7) cm/s and intrinsic values of f(t) of approximately 30 GHz for a gate length of 700 nm, increasing with decreasing length. The results provide clear insights into the challenges and opportunities of SWNT arrays for applications in RF electronics.

Optimized structural designs for stretchable silicon integrated circuits.

Materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to approximately 90%. Simple circuits, including complementary metal-oxide-semiconductor inverters and n-type metal-oxide-semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.

Semiconductor wires and ribbons for high-performance flexible electronics.

This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described.