Association of hospital-treated infectious diseases and infection burden with cardiovascular diseases and life expectancy.

BACKGROUND: The association of a broad spectrum of infectious diseases with cardiovascular outcomes remains unclear. OBJECTIVES: We aim to provide the cardiovascular risk profiles associated with a wide range of infectious diseases and explore the extent to which infections reduce life expectancy. METHODS: We ascertained exposure to 900+ infectious diseases before cardiovascular disease (CVD) onset in 453,102 participants from the UK Biobank study. Time-varying Cox proportional hazard models were used. Life table was used to estimate the life expectancy of individuals aged ≥50 with different levels of infection burden (defined as the number of infection episodes over time and the number of co-occurring infections). RESULTS: Infectious diseases were associated with a greater risk of CVD events (adjusted HR [aHR] 1.79 [95% confidence interval {CI} 1.74-1.83]). For type-specific analysis, bacterial infection with sepsis had the strongest risk of CVD events [aHR 4.76 (4.35-5.20)]. For site-specific analysis, heart and circulation infections posed the greatest risk of CVD events [aHR 4.95 (95% CI 3.77-6.50)], whereas noncardiac infections also showed excess risk [1.77 (1.72-1.81)]. Synergistic interactions were observed between infections and genetic risk score. A dose-response relationship was found between infection burden and CVD risks (p-trend <0.001). Infection burden >1 led to a CVD-related life loss at age 50 by 9.3 years [95% CI 8.6-10.3]) for men and 6.6 years [5.5-7.8] for women. CONCLUSIONS: The magnitude of the infection-CVD association showed specificity in sex, pathogen type, infection burden, and infection site. High genetic risk and infection synergistically increased the CVD risk.

Large-Emitting-Area Quantum Dot Light-Emitting Diodes Fabricated by an All-Solution Process.

Quantum dots (QDs) have attracted a lot of attention over the past decades due to their sharp emission spectrum and color, which can be tuned by changing just the particle size and chromophoric stability. All these advantages of QDs make quantum dot light-emitting diodes (QLEDs) promising candidates for display and light-source applications. This paper demonstrates a large-emitting-area QLED fabricated by a full-solution process. This QLED is composed of indium tin oxide (ITO) as the anode, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) as the hole injection layer (HIL), and poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (poly-TPD) as the hole-transport layer (HTL). The light-emitting layer (EML) is composed of green CdSe/ZnS quantum dots. By applying the ZnO nanoparticles as the electron-injection/transport layer, QLED devices are prepared under a full-solution process. The large-emitting-area QLED exhibits a low turn-on voltage of around 2~3 V, and the International Commission on Illumination (CIE) 1931 coordinate value of the emission spectrum was (0.31, 0.66). The large emitting area and the unique QLED structure of the device make it possible to apply these features to inkjet printing quantum dot light sources and quantum dot display applications.

Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer.

We demonstrated a method to obtain super flexible LEDs, based on high quality pyramid arrays grown directly on sapphire substrates. Laser lift-off (LLO) and dual transfer processes were applied to transfer pyramid arrays face up onto the flexible substrates, which is more efficient than back light emission. Ag grid and Ag nanowires were employed as the electrical connection. No significant performance reduction appeared until the device reached a curvature radius of 0.5 mm. The performance reduction results from cracks appearing at the junction of the Ag grid, which can be improved by replacing the Ag grid with a strip electrode.

Development of Uniform Polydimethylsiloxane Arrays through Inkjet Printing.

The inkjet printing method is a promising method to deposit polymer and functional nanoparticles at the microscale. It can be applied in the fabrication of multicolor polymer light emitting diodes (polyLEDs), polymer base electronics, multicolor color conversion layers, and quantum dot light emitting diodes (QLEDs). One of the main challenges is to print high-resolution polymer dots from dilute polymer solution. In addition, the quality of printed multicolor polyLEDs, QLEDs and multicolor color conversion layers is currently limited by non-uniformity of the printed dots. In this paper, polydimethylsiloxane (PDMS) is selected as the functional polymer, due to its high transparency, good reflective index value, inflammable and flexible properties. The optimal ink to form a uniform PDMS dot array is presented in this paper. Both the solvent and PDMS were tuned to form the uniform PDMS dot array. The uniform PDMS dot array was printed with a diameter of around 50 µm, and the array of closely spaced green quantum dots (QDs) mixed with PDMS ink was also printed on the substrate uniformly. While the green QD-PDMS film was printed at a resolution of 1693 dpi, the uniformity was evaluated using the photoluminescence (PL) spectrum and color coordinate value.