Intrinsic Ge nanowire nonvolatile memory based on a simple core-shell structure.

Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide.

Treatment of thoracolumbar fracture with pedicle screws at injury level: a biomechanical study based on three-dimensional finite element analysis.

The aim of this study was to investigate the biomechanical mechanisms of treatment of thoracolumbar compression fracture with pedicle screws at injury level based on a three-dimensional finite element method. We constructed one three-dimensional finite element model of T11-L1 in a patient with a compression fracture of the T12 vertebral body(anterior edges of vertebral body were compressed to 1/2, and kyphosis Cobb angle was 18.6°) fixed by four pedicle screws and another model fixed by six pedicle screws at the injured vertebrae, and then assigned different forces to the two models to account for axial compression, flexion, extension, left lateral bending, and rightward axial rotation by Ansys software. After different loading forces were applied to the models, we recorded stress measurements on the vertebral pedicle screws, as well as the maximum displacement of T11. The stress distribution suggested that stress concentration was appreciable at the root of the pedicle screws under different loading modalities. Under axial compression, flexion, extension, left lateral bending, and rightward axial rotation load, the stress for the superior screw was significantly greater than the stress for the inferior screw (P < 0.05). The stress in the six pedicle screw fixation model was significantly decreased compared to the four screw interbody fusion model (P < 0.05), but the maximum displacement of T11 between two models under different loadings was not statistically different. The use of pedicle screws at injured vertebral bodies may optimize internal fixation load and reduce the incidence of broken screws.

Transfer-free synthesis of doped and patterned graphene films.

High-quality and wafer-scale graphene on insulating gate dielectrics is a prerequisite for graphene electronic applications. For such applications, graphene is typically synthesized and then transferred to a desirable substrate for subsequent device processing. Direct production of graphene on substrates without transfer is highly desirable for simplified device processing. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, we report a simple, transfer-free method capable of synthesizing graphene directly on dielectric substrates at temperatures as low as 600 °C using polycyclic aromatic hydrocarbons as the carbon source. Significantly, N-doping and patterning of graphene can be readily and concurrently achieved by this growth method. Remarkably, the graphene films directly grown on glass attained a small sheet resistance of 550 Ω/sq and a high transmittance of 91.2%. Organic light-emitting diodes (OLEDs) fabricated on N-doped graphene on glass achieved a current density of 4.0 mA/cm(2) at 8 V compared to 2.6 mA/cm(2) for OLEDs similarly fabricated on indium tin oxide (ITO)-coated glass, demonstrating that the graphene thus prepared may have potential to serve as a transparent electrode to replace ITO.

[A biomechanical study on cervical spinal posture and prior loading history affecting spinal compressive strength].

OBJECTIVE: The purpose of this study is to investigate the effect of cervical spinal posture and prior loading history on spinal compressive strength. METHODS: Twelve human cadaver cervical spines were harvested and dissected into 24 motion segments containing 2 vertebrae and the intervertebral discs (C3,4 and C5,6). Compressive loads were applied on so that the effects of 2 loading conditions (dehydrated, superhydrated) and 2 postures (neutral trunk, flexed) could be examined. Dissection techniques and X-rays were used to determine the tissue injuries. RESULTS: Specimens had a lower ultimate compressive strength (P <0.001) in flexed posture than in neutral trunk posture. Under the injury loading in neutral trunk posture, superhydrated specimens had a lower strength (29%, P <0.01) than dehydrated specimens did. CONCLUSION: The spine may be more prone to injury early in the morning when the discs are at highest level of hydration and the cervical spine is in fully flexed posture.

Phototransistor based on single In2Se3 nanosheets.

Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications.