Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers.

Interfacial 'dead' layers between metals and ferroelectric thin films generally induce detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous in other electronic devices. Here, we show that dead layers with low Li concentration located at the surface of LiNbO3 ferroelectric materials can function as unipolar selectors. LiNbO3 mesa cells were etched from a single-crystal LiNbO3 substrate, and Pt metal contacts were deposited on their sides. Poling induced non-volatile switching of ferroelectric domains in the cell, and volatile switching in the domains in the interfacial (dead) layers, with the domain walls created within the substrate being electrically conductive. These features were also confirmed using single-crystal LiNbO3 thin films bonded to SiO2/Si wafers. The fabricated nanoscale mesa-structured memory cell with an embedded interfacial-layer selector shows a high on-to-off ratio (>106) and high switching endurance (~1010 cycles), showing potential for the fabrication of crossbar arrays of ferroelectric domain wall memories.

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

With the formation of mesa-like cells at their surfaces, LiNbO3 thin films are useful for integrating high-density domain wall memory. However, the material is too hard and inert to etch the cells with inclined side edges that help to diminish polarization retention. Moreover, etching could damage the ferroelectricity of the film. To overcome these drawbacks in forming memory cells directly, we developed a technique to deposit two gapped electrodes in the film surface, without needing to etch the film. While applying an in-plane write voltage above a coercive voltage, the domain within the gap is reversibly switched along with the creation/erasure of conducting domain walls against the peripheral unswitched domain. This technique enables "on"/"off" current read of the written information. Unfortunately, the switched domain within the gap generally has poor retention and a weak wall current arises from the presence of a strong depolarization field. To overcome this problem, we fabricated a type of embedded electrode that diffuses thickness-wise into the LiNbO3 thin film to form a parallel-plate-like structure to screen the depolarization field. The switched domains now had good retention and carry large wall currents. Alternatively, without the embedded electrodes, the switched domains within the cells can be stabilized with increasing gap distance above a critical length of 320 nm. The two methods foreshadow the possibility in the future to fabricate damage-free LiNbO3 memory cells without etching.

Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core-shell nanowires with enhanced photoelectrochemical performance.

As a well-known semiconductor that can catalyse the oxygen evolution reaction, TiO2 has been extensively investigated for its solar photoelectrochemical water properties. Unmodified TiO2 shows some issues, particularly with respect to its photoelectrochemical performance. In this paper, we present a strategy for the controlled deposition of controlled amounts of GaOxNy cocatalysts on TiO2 1D nanowires (TiO2@GaOxNy core-shell) using atomic layer deposition. We show that this modification significantly enhances the photoelectrochemical performance compared to pure TiO2 NW photoanodes. For our most active TiO2@GaOxNy core-shell nanowires with a GaOxNy thickness of 20 nm, a photocurrent density up to 1.10 mA cm-2 (at 1.23 V vs. RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of unmodified TiO2 NWs. Furthermore, the band gap matching with TiO2 enhances the absorption of visible light over unmodified TiO2 and the facile oxygen vacancy formation after the deposition of GaOxNy also provides active sites for water activation. Density functional theory studies of model systems of GaOxNy-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaOxNy core-shell nanowires with ALD deposited GaOxNy demonstrate a good strategy for the fabrication of core-shell structures that enhance the photoelectrochemical performance of readily available photoanodes.

[Simultaneous determination of matrine, oxysophocarpin and oxymatrine in rat plasma by HPLC-MS and its application in the pharmacokinetic study].

To establish an HPLC-MS method for simultaneous determination of matrine, oxymatrine and oxysophocarpine in rat plasma after oral administration of herbal preparation, namely Sanwu Huangqin decoction, and the pharmacokinetic porameters were calculated as well. Matrine, oxymatrine, oxysophocarpine, and internal standard pseudoephedrine were extracted from plasma with liquid-liquid extraction, then separated on a Kromasil C18 column by using acetonitrile-0.1% aqueous formic acid (10 : 90) as mobile phase. Electrospray ionization (ESI) source was applied and operated in positive ion mode. The linear calibration curve was obtained in the concentration range of 10 -5 000 ng x mL(-1) for matrine, 2 - 1 000 ng x mL(-1) for oxymatrine, and 2 - 1 000 ng x mL(-1) for oxysophocarpine. The extraction recovery was 89.1% - 93.5%, 83.9% - 91.3%, and 85.4% - 88.0% accordingly. The inter- and intra- day precision (RSD) was below 15.0% calculated from quality control (QC) samples. Matrine, oxymatrine and oxysophocarpine concentration time profile conformed to a two-compartment pharmacokinetic model. The method was shown to be effective, convenient, and suitable for simultaneous pharmacokinetic study of matrine, oxymatrine, and oxysophocarpine in rat.