Identification of putative miRNAs from the deep-branching unicellular flagellates.

MicroRNAs (miRNAs) are a class of extensively studied RNAi-associated small RNAs that play a critical role in eukaryotic gene regulation. However, knowledge on the miRNA and its regulation in unicellular eukaryotes is very limited. In order to obtain a better understanding on the origin of miRNA regulation system, we used deep-sequencing technology to investigate the miRNA expression pattern in four deep-branching unicellular flagellates: Giardia lamblia, Trichomonas vaginalis, Tritrichomonas foetus, and Pentatrichomonas hominis. In addition to the known miRNAs that have been described in G. lamblia and T. vaginalis, we identified 14 ancient animal miRNA families and 13 plant-specific families. Bioinformatics analysis also identified four novel miRNA candidates with reliable precursor structures derived from mature tRNAs. Our results indicated that miRNAs are likely to be a general feature for gene regulation throughout unicellular and multicellular eukaryotes and some of them may derive from unconventional ncRNAs such as snoRNA and tRNA.

Electrical conduction mechanisms in natively doped ZnO nanowires.

Single-crystalline zinc oxide (ZnO) nanowires (NWs) with diameters of 90-200 nm were synthesized by the thermal evaporation method. Four-probe Ti/Au electrodes were made by the standard electron-beam lithography technique, and the intrinsic resistivities, rho(T), of individual NWs were measured over a wide range of temperature from 300 down to 0.25 K. The temperature behavior of rho(T) between 300 and 5 K reveals that the intrinsic electrical-transport mechanisms through individual ZnO NWs are due to a combination of the thermal activation conduction and the nearest-neighbor hopping conduction processes. Three distinct activation and hopping contributions with discrete characteristic activation energies are observed. Above about 100 K, the charge transport mechanism is dominated by the thermal activation of electrons from the Fermi level, mu, to the conduction band. Between approximately 20 and 100 K, the charge transport mechanism is due to the activation of electrons from mu to the upper impurity (D-) band. Between approximately 5 and 20 K, the charge transport mechanism arises from the nearest-neighbor hopping conduction within the lower impurity (D) band. Such unique electrical conduction behaviors can be explained in terms of the intricate material properties (in particular, the presence of moderately high concentrations of n-type defects accompanied with a slight self-compensation) in natively doped ZnO NWs. In one heavily doped NW, a surface-related conduction process manifesting the two-dimensional attributes of quantum-interference transport phenomena is observed. The carrier concentrations in our NWs have been estimated, and they were found to lie close to the critical concentration for the Mott metal-insulator transition.

Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K.

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few microm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

Time-dependent universal conductance fluctuations in IrO2 nanowires.

: Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.1 e2 / h at 1.7 K. We ascribe these conductance fluctuations to originating from the conduction electrons scattering upon mobile defects (moving scattering centers). Our measured TUCF characteristics are satisfactorily explained in terms of the existing TUCF theory in its three-dimensional form. The extracted electron dephasing length Lφ(1.7 K) ≃90 nm is smaller than the diameter (≈ 180 nm) of our nanowires.

Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires.

We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.

Thermal fluctuation-induced tunneling conduction through metal nanowire contacts.

The temperature behavior of how electrons propagate through an insulating electronic contact formed at the interface between a submicron Cr/Au electrode and a metallic RuO(2) nanowire (NW) has been studied between 300 and 1 K. The NWs are typically of ∼70 nm in diameter and a few microns long. The submicron electrodes were fabricated by the standard electron-beam lithography technique. By employing the two-probe method, the electronic contact resistances, R(c)(T), have been determined. We found that, in general, R(c) increases rapidly with decreasing temperature but eventually saturates at liquid-helium temperatures. Such a temperature behavior can be well described by a thermal fluctuation-induced tunneling (FIT) conduction process which considers the crossover feature from thermal activation conduction at high temperatures to simple elastic tunneling conduction at low temperatures. The wide applicability of this FIT model has further been established by employing metallic IrO(2) and Sn-doped In(2)O(3-x) NWs. This work demonstrates that the underlying physics for the charge transport properties of an insulating electronic contact can be well understood.