Control of the Bright-Dark Exciton Splitting Using the Lamb Shift in a Two-Dimensional Semiconductor.

We investigate the exciton fine structure in atomically thin WSe_{2}-based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting Δ between the bright and dark exciton is measured by photoluminescence spectroscopy. We demonstrate that Δ can be tuned by a few meV as a result of a significant Lamb shift of the optically active exciton that arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measure strong variations of the bright exciton radiative linewidth as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field fluctuations. We find a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control we demonstrate here in the weak light-matter coupling regime should apply to any semiconductor structures.

Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor.

Using a spatially resolved optical pump-probe experiment, we measure the lateral transport of spin-valley polarized electrons over very long distances (tens of micrometers) in a single WSe_{2} monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin-valley polarization (up to 75%) using circularly polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially separated and linearly polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 µm. Characteristic spin-valley diffusion lengths of 18±3 µm are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pumping efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.

A Bayesian approach to luminescent down-conversion.

Photon conversion embodies a range of promising possibilities in pushing the theoretical Shockley-Queisser efficiency model of classical solar cells. Luminescent down-conversion, despite its potential, is held back in practical applications due to the difficulty of proper characterization in no small part because of concurrent luminescent downshifting events. Recent advances have demonstrated the opportunity provided by photon correlation measurement for down-conversion characterization. In this methodological work, we present a general method based on Bayesian probabilities for deriving auto-correlation functions analytically. This method is then applied to the five down-conversion mechanisms reported in the literature and successfully tested against numerical simulations. We show that the zero delay auto-correlation function can be the most direct way to demonstrate down-conversion and assess its efficiency. Our analysis offers additional useful tools for the design of characterization experiments and emphasizes some universal behavior valid for all reported conversion mechanisms.

Direct observation of the electron spin relaxation induced by nuclei in quantum dots.

We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.