An Ultrathin Flexible Programmable Spin Logic Device Based on Spin-Orbit Torque.

Flexible electronic devices have shown increasingly promising value facilitating our daily lives. However, flexible spintronic devices remain in their infancy. Here, this research demonstrates a type of nonvolatile, low power dissipation, and programmable flexible spin logic device, which is based on the spin-orbit torque in polyimide (PI)/Ta/Pt/Co/Pt heterostructures fabricated via capillary-assisted electrochemical delamination. The magnetization switching ratio is shown to be about 50% for the flexible device and does not change after 100 cycles of bending, indicating the device has stable performance. By designing the path of pulse current, five Boolean logic gates AND, NAND, NOT, NOR, and OR can be realized in an integrated two-element device. Moreover, such peeling-off devices can be successfully transferred to almost any substrate, such as paper and human skin, and maintain high performance. The flexible PI/Ta/Pt/Co/Pt spin logic device serves as logic-in-memory architecture and can be used in wearable electronics.

Manipulating the metal-to-insulator transitions of VO2 by combining compositing and doping strategies.

Vanadium dioxide (VO2) exhibits the most abrupt metal-to-insulator transition (MIT) property near room temperature among the representative 3d-orbital correlated oxides, and its structural variation during the MIT usually results in poor mechanical properties as bulk pellets. Moreover, compositing with highly resistive oxides has been reported to improve the mechanical strength of bulk VO2 since the generation and propagation of microcracks is suppressed upon thermocycling across the MIT; further, their respective impacts on electrical transportation are yet unclear. Herein, we demonstrate the role of these highly resistive oxide composites (e.g., HfO2, CoO and Al2O3) in reducing charge leakage along the microcracks within the insulating phase of VO2, leading to more abrupt MIT properties from the perspective of electrical transportation. This enables the possibility of simultaneously regulating the critical temperature and abrupt MIT transition, as well as the mechanical properties of the VO2 bulk pellets via compositing with oxides with different melting points using spark plasma-assisted reactive sintering (SPARS).

Evaluation of illness severity of neonate infectious pneumonia and neurobehavioral development through ultrasonography under adaption algorithm.

OBJECTIVES: To explore the diagnostic effect of ultrasound imaging on the illness severity, and to analyze neurobehavioral development of neonates with Infectious Pneumonia (IPN), Self- Adaptation (SD), and Spatial Smoothing (SS) technologies were adopted to build SDSS. Then, the WFFSF algorithm based on Wiener Filtering (WF) and Feature Space Fusion (FSF) and the SNRP-FSF algorithm based on Signal-to-noise ratio post-filtering (SNRP) and FSF were introduced for comparison. METHODS: One hundred and thirty-two neonates were divided into group without respiratory failure (S1) and respiratory failure group (S2). The study was conducted from March 2018 to July 2020. According to scoring systems for neonatal critically illness, they were divided into non-severe group (W1), severe group (W2), and extremely-severe group (W3). According to the Scale of Child Development Center of China (CDCC), they were divided into a normal neurobehavioral developmental group (P1) and an abnormal neurobehavioral developmental group (P2). RESULTS: The normalized mean square distance l and normalized mean absolute distance f of SDSS algorithm were significantly lower than that of WFFSF algorithm and SNRP-FSF algorithm, and the peak signal-to-noise ratio (PSNR) was significantly higher than that of WFFSF algorithm and SNRP-FSF algorithm (P<0.05). The lung ultrasound score (40.62±7.22%) of S1 was greatly higher than S2 group (28.47±6.29%) (P<0.05); the lung ultrasound score (39.13±8.25) in W1 was greatly higher than W2 (27.28±6.39) and W3 groups (14.33±7.03); neonates in group W2 had higher lung ultrasound scores than W3 (P<0.05), and lung ultrasound scores in P1 (42.57±8.58) was greatly higher than that the P2 group (26.49±6.09). CONCLUSION: In contrast with traditional algorithms, the SDSS algorithm based on AD has a better reconstruction effect on neonatal IPN ultrasound images. The lung ultrasound score can clearly indicate the severity of the disease and neurobehavioral development of neonate IPN, and the lung ultrasound score is negatively correlated with the severity of the child's disease and the abnormality of neurobehavioral development.

In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure.

We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner-Wohlfarth model and first principle calculation with the electric field varying from -10 to 10 kV cm-1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface.

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from the metallic layer can reduce the overall device efficiency. In this study, we propose an antiferromagnetic insulator-based heterostructure NiO/Ta/Pt/Co/Pt for such spin polarization control without any shunting effect in the antiferromagnetic layer. We show that zero-field magnetization switching can be realized and is related to the out-of-plane component of spin polarization modulated by the NiO/Pt interface. The zero-field magnetization switching ratio can be effectively tuned by the substrates, in which the easy axis of NiO can be manipulated by the tensile or compressive strain from the substrates. Our work demonstrates that the insulating antiferromagnet based heterostructure is a promising platform to enhance the spin-orbital torque efficiency and achieve field-free magnetization switching, thus opening an avenue towards energy-efficient spintronic devices.

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film.

Magnetic field-free, nonvolatile magnetic memory with low power consumption is highly desired in information technology. In this work, we report a current-controllable alignment of magnetic domain walls in a single layer La0.67Sr0.33MnO3 thin film with the threshold current density of 2 × 105 A/cm2 at room temperature. The vector relationship between current directions and domain-wall orientations indicates the dominant role of spin-orbit torque without an assistance of external magnetic field. Meanwhile, significant planar Hall resistances can be readout in a nonvolatile way before and after the domain-wall reorientation. A domain-wall-based magnetic random-access memory (DW-MRAM) prototype device has been proposed.

Influence of formulation and preparation process on ambroxol hydrochloride dry powder inhalation characteristics and aerosolization properties.

The objective of this study is to evaluate the influence of formulation and preparation process on ambroxol hydrochloride (AH) dry powder inhalation (DPI) characteristics and aerosolization properties. Spray-dried samples of AH, AH/leucine, and AH/leucine/mannitol were prepared from their corresponding water solutions under the same conditions to study the influence of the composition, and the AH/leucine/mannitol (2.5/0.5/1 by weight) formulation was used for investigation of the effect of the preparation process. Following spray-drying, the resulting powders were characterized using scanning electron microscopy, laser diffraction, tapped density, and angle of repose measurements, and the aerosolization performance was determined using a twin-stage liquid impinger. AH/leucine/mannitol (2.5/0.5/1 by weight) obtained by cospray-drying improved the AH aerosolization properties. The AH/leucine/mannitol (2.5/0.5/1 by weight) preparation exhibited the following properties: 62.34% yield, 0.34 g/cm(3) tap density, 2.71 microm d(ae), 33.45 degrees angle of repose, and 30.93% respirable fraction. The influence of the preparation process on DPI characteristics and aerosolization properties was relatively small, but the influence of the composition was relatively large. Optimization of DPI can be achieved by selecting the most appropriate formulation and preparation process.

Hybrid magnetoresistance in Pt-based multilayers: Effect originated from strong interfacial spin-orbit coupling.

The hybrid magnetoresistance (MR) behaviors in Pt/Co90Fe10/Pt, Mn1.5Ga/Pt and Mn1.5Ga/Pt/Co90Fe10/Pt multilayers have been investigated. Both planer Hall effect (PHE) and angle-dependent MR in Pt/Co90Fe10/Pt revealed the combination of spin Hall MR (SMR) and normal anisotropic MR (AMR), indicating the large contribution of strong spin-orbit coupling (SOC) at the interfaces. When Pt contacted with perpendicular magnetic anisotropy (PMA) metal Mn1.5Ga, the strong interfacial SOC modified the effective anomalous Hall effect. The MR in Mn1.5Ga/Pt/Co90Fe10/Pt is not a simple combination of SMR and AMR, but ascribed to the complicated domain wall scattering and strong interfacial SOC when Pt is sandwiched by the in-plane magnetized Co90Fe10 and the PMA Mn1.5Ga.

Modulated switching current density and spin-orbit torques in MnGa/Ta films with inserting ferromagnetic layers.

We report modulated switching current density and spin-orbit torques (SOT) in MnGa/Ta films with inserting very thin Co2FeAl and Co layers. Ferromagnetic coupling has been found in MnGa/Co2FeAl/Ta, resulting in a decreased effective anisotropy field. On the contrary, in MnGa/Co/Ta, antiferromagnetic coupling plays a dominant role. The switching current density Jc in MnGa/Ta is 8.5 × 107 A/cm2. After inserting 0.8-nm-thick Co2FeAl and Co, theJc becomes 5 × 107 A/cm2 and 9 × 107 A/cm2, respectively. By performing adiabatic harmonic Hall voltage measurements, it is demonstrated that the inserted Co2FeAl layer has mainly enhanced the field-like torques, while in MnGa/Co/Ta the damping-like torques have been enhanced. Finally, the enhanced spin Hall effect (SHE) has also been studied using the spin Hall magnetoresistance measurement. The modulated Jc and SOT are ascribed to the combination of magnetic coupling, Rashba effect and SHE at the interfaces.

Piezo Voltage Controlled Planar Hall Effect Devices.

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Multifunctional L1(0) -Mn(1.5)Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

A new kind of multifunctional L1(0) -Mn(1.5)Ga film is demonstrated for the first time. These MBE-grown epitaxial films exhibit pronounced magnetic properties at room temperature, including ultrahigh perpendicular coercivity up to 42.8 kOe, giant perpendicular magnetic anisotropy with a maximum of 21.7 Merg/cm(3) and large magnetic energy products up to 2.60 MGOe, which allow various applications in ultrahigh density recording, spintronics, and permanent magnets.