Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators.

Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO_{3} Mott, and large band gap KTaO_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO_{3} and LaTiO_{3} which, due to a small gap in the LaTiO_{3} results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO_{3}/KTaO_{3} (110) where the "polar" arguments are not applicable and on the emergence of superconductivity in these structures.

Tuning the structure of ultrathin BaTiO3 films on Me(001) (Me=Fe, Pd, Pt) surfaces.

Using surface x-ray diffraction in combination with ab initio calculations, we demonstrate that the atomic structure of ultrathin BaTiO3 (BTO) films grown on Me(001) surfaces (Me=Fe, Pd, Pt) depends on subtle modifications of the interface chemical composition. A complete reversal of the surface termination from a BaO- [BTO on Fe(001)] to a TiO2-terminated film [BTO on Pt(001)] is observed which goes in parallel with the adsorption of submonolayer amounts of oxygen at metal hollow sites of the interface. Our results may suggest a new route to an overall control of both the surface and the interface geometry in BaTiO3/metal contacts.

Switching magnetization by 180° with an electric field.

Magnetoelectric coupling allows for manipulating the magnetization by an external electric field or the electrical polarization by an external magnetic field. Here, we propose a mechanism to electrically induce 180° magnetization switching combining two effects: the magnetoelectric coupling at a multiferroic interface and magnetic interlayer exchange coupling. By means of first-principles methods, we investigate a ferroelectric layer in contact with a Fe/Au/Fe trilayer. The calculations show that the interface magnetism is strongly coupled to the ferroelectric layer. Furthermore, under certain conditions a reversal of polarization causes a sign reversal of the interlayer exchange coupling which is results in a 180° switching of the free layer magnetization. We argue that this magnetoelectric coupling mechanism is very robust and can find applications in magnetic data storage.

Complex spin texture in the pure and Mn-doped topological insulator Bi2Te3.

Topological insulators are characterized by the presence of spin-momentum-locked surface states with Dirac points that span the fundamental bulk band gap. We show by first-principles calculations that the surface state of the insulator Bi2Te3 survives upon moderate Mn doping of the surface layers. The spin texture of both undoped and Mn-doped Bi2Te3 is much more complicated than commonly believed, showing layer-dependent spin reversal and spin vortices.

Persistence of surface domain structures for a bulk ferroelectric above TC.

Photoemission electron microscopy performed on a well-prepared surface of BaTiO3 reveals the persistence of surface domains at temperatures well above the bulk Curie temperature. Their patterns follow the ferroelectric domain structure observed at 300 K. The contrast between formerly outward polarized domains and in-plane polarized domains is preserved across the transition, while the contrast of inward polarized domains changes sign. The work functions of different possible structures are compared by first-principles calculations. The domain contrast in photoemission above the bulk Curie temperature is associated with a remaining tetragonal distortion of the topmost unit cells which is stabilized by an ionic surface relaxation.

Topological character and magnetism of the Dirac state in Mn-doped Bi2Te3.

First-principles and model calculations show that the Dirac surface state of the topological insulator Bi(2)Te(3) survives upon moderate Mn doping of the surface layers but can lose its topological character as a function of magnetization direction. The dispersion depends considerably on the direction of the Mn magnetization: for perpendicular magnetization, a gap of 16 meV opens up at the Dirac point; for in-plane magnetization, a tiny gap can be opened or closed in dependence on the magnetization azimuth. The ground state is ferromagnetic, with a critical temperature of 12 K. The results provide a path towards a magnetic control of the topological character of the Dirac surface state and its consequences to spin-dependent transport properties.

BaTiO3(001)-(2×1): surface structure and spin density.

Using surface x-ray diffraction and ab initio calculations we present a model of the BaTiO3(001)-(2×1) surface structure, which has not been considered so far. While the crystal is terminated by two TiO2 layers similarly to SrTiO3(001)-(2×1), we find that one out of two surface layer Ti-atoms resides in a tetragonal pyramidal oxygen environment. This peculiar geometry leads to a metallic and magnetic surface involving local magnetic moments up to 2µ(B) in magnitude located at surface Ti and O atoms. Our results are important for the understanding of the intrinsic surface metallicity of insulating oxides in general.

Structural secrets of multiferroic interfaces.

We present an experimental and theoretical study of the geometric structure of ultrathin BaTiO(3) films grown on Fe(001). Surface x-ray diffraction reveals that the films are terminated by a BaO layer, while the TiO(2) layer is next to the top Fe layer. Cations in termination layers have incomplete oxygen shells inducing strong vertical relaxations. Onset of polarization is observed at a minimum thickness of two unit cells. Our findings are supported by first-principles calculations providing a quantitative insight into the multiferroic properties on the atomic scale.

Tilting, bending, and nonterminal sites in CO/Cu(001).

Using scanning tunneling microscopy experiments in combination with first-principles calculations we have studied the geometric structure of the compressed c(7sqrt(2) × sqrt(2)) antiphase domain structure of CO on Cu(001). We find direct evidence for structural relaxations involving an inhomogeneous CO environment characterized by molecular tilting, bending, and nonterminal sites. Our analysis solves the long-standing problem of the adsorption structure of the compressed phase and is important for understanding the physical properties of this fundamental adsorption system.

Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions.

The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable-temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect.

Tailoring magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices.

The magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices was investigated. High quality superlattices with ultrathin La0.7Sr0.3MnO3 and SrRuO3 layers were fabricated by pulsed laser deposition. The superlattices grew coherently with Mn/Ru intermixing restricted to about one interfacial monolayer. Strong antiferromagnetic interlayer coupling depended delicately on magnetocrystalline anisotropy and intermixing at interfaces. Ab initio calculations elucidated that the antiferromagnetic coupling is mediated by the Mn-O-Ru bond. The theoretical calculations allowed for a quantitative correlation between the total magnetic moment of the superlattice and the degree of Mn/Ru intermixing.

The emergence of magnetic ordering at complex oxide interfaces tuned by defects.

Complex oxides show extreme sensitivity to structural distortions and defects, and the intricate balance of competing interactions which emerge at atomically defined interfaces may give rise to unexpected physics. In the interfaces of non-magnetic complex oxides, one of the most intriguing properties is the emergence of magnetism which is sensitive to chemical defects. Particularly, it is unclear which defects are responsible for the emergent magnetic interfaces. Here, we show direct and clear experimental evidence, supported by theoretical explanation, that the B-site cation stoichiometry is crucial for the creation and control of magnetism at the interface between non-magnetic ABO3-perovskite oxides, LaAlO3 and SrTiO3. We find that consecutive defect formation, driven by atomic charge compensation, establishes the formation of robust perpendicular magnetic moments at the interface. Our observations propose a route to tune these emerging magnetoelectric structures, which are strongly coupled at the polar-nonpolar complex oxide interfaces.

Role of tetrahedrally coordinated dopants in palladium hydrides on their superconductivity and inverse isotope effect.

Absorption of hydrogen by palladium causes PdH to become superconducting below [Formula: see text]. Due to the presence of one octapore and two tetrapores per each Pd atom, it is believed that [Formula: see text] of PdH[Formula: see text] should increase further. Here, using ab initio calculation we show that (i) H placed in tetrapores of PdH[Formula: see text] induces a wide optical gap in the phonon density of states, which significantly reduces the electron-phonon coupling, and that (ii) the energetically preferable octapores filled by H enable the 9 K superconductivity only. This scenario may close a long-standing problem of the high-[Formula: see text] palladium hydrides. Moreover, simulating the pore population by H and D, within ab initio molecular dynamics, we are able to explain the inverse isotope effect in the framework of the Bardeen-Cooper-Schrieffer theory.

Phonon limited electronic transport in Pb.

We present a fully ab initio based scheme to compute electronic transport properties, i.e. the electrical conductivity σ and thermopower S, in the presence of electron-phonon interaction. We explicitly investigate the [Formula: see text] structure of the Éliashberg spectral function, the coupling strength, the linewidth and the relaxation time τ. We obtain a state-dependent τ and show its necessity to reproduce the increased thermopower for temperatures below the Debye temperature, without accounting for the phonon-drag effect. Despite the detailed investigations of various [Formula: see text]- and [Formula: see text]-dependencies, the presented scheme can be easily applied to more complicated systems.

Topological Crystalline Insulator in a New Bi Semiconducting Phase.

Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.

Study of electronic and magnetic properties and related x-ray absorption spectroscopy of ultrathin Co films on BaTiO3.

We present a first-principles study of electronic and magnetic properties of thin Co films on a BaTiO3(0 0 1) single crystal. The crystalline structure of 1-3 monolayer thick Co films was determined and served as input for calculations of the electronic and magnetic properties of the films. The estimation of exchange constants indicates that the Co films are ferromagnetic with a high critical temperature, which depends on the film thickness and the interface geometry. In addition, we calculated x-ray absorption spectra, related magnetic circular dichroism (XMCD) and linear dichroism (XLD) of the Co L 2, 3 edges as a function of Co film thickness and ferroelectric polarization of BaTiO3. We found characteristic features, which depend strongly on the magnetic properties and the structure of the film. While there is only a weak dependence of XMCD spectra on the ferroelectric polarization, the XLD of the films is much more sensitive to the polarization switching, which could possibly be observed experimentally.

Thermal string excitations in artificial spin-ice square dipolar array.

We report on a theoretical investigation of artificial spin-ice dipolar arrays using a nanoisland shape adopted from recent experiments (Farhan et al 2013 Nature Phys. 9 375). The number of thermal magnetic string excitations in the square lattice is drastically increased by a vertical displacement of rows and columns. We find large increments especially for low temperatures and for string excitations with quasi-monopoles of charges ± 4. By kinetic Monte Carlo simulations we address the thermal stability of such excitations, thereby providing time scales for their experimental observation.

Validity of the relativistic phase shift model for the extrinsic spin Hall effect in dilute metal alloys.

Recently, a generalized relativistic phase shift model was proposed (Fedorovet al 2013 Phys. Rev. B 88 085116) for the description of the skew-scattering contribution to the spin Hall effect caused by impurities. Here, we inspect this model by means of a systematic comparison with the results of first-principles calculations performed for several metallic host systems with different substitutional impurities. It is found that for its proper application, the differences between impurity and host phase shifts should be used as input parameters. Generally, the model provides good qualitative agreement with ab initio results for hosts with a free-electron-like Fermi surface and a relatively weak spin-orbit coupling, but fails otherwise.

Thermoelectric transport in strained Si and Si/Ge heterostructures.

The anisotropic thermoelectric transport properties of bulk silicon strained in the [111]-direction were studied by detailed first-principles calculations focusing on a possible enhancement of the power factor. Electron and hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high-temperature and high-doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of a [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole doping was drastically suppressed due to quantum-well effects, while under electron doping an enhanced power factor was found. For this, we state figures of merit of ZT = 0.2 and 1.4 at T = 300 and 900 K for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.

First-principle calculations of the Berry curvature of Bloch states for charge and spin transport of electrons.

Recent progress in wave packet dynamics based on the insight of Berry pertaining to adiabatic evolution of quantum systems has led to the need for a new property of a Bloch state, the Berry curvature, to be calculated from first principles. We report here on the response to this challenge by the ab initio community during the past decade. First we give a tutorial introduction of the conceptual developments we mentioned above. Then we describe four methodologies which have been developed for first-principle calculations of the Berry curvature. Finally, to illustrate the significance of the new developments, we report some results of calculations of interesting physical properties such as the anomalous and spin Hall conductivity as well as the anomalous Nernst conductivity and discuss the influence of the Berry curvature on the de Haas-van Alphen oscillation.