Simple technique for evaluating dimensional and compositional changes in selective-area-grown MQW laser diode.

We report on a novel combination of measurement techniques for evaluating dimensional and compositional changes of selective-area-grown multiple-quantum-well laser diodes (SAG MQW LDs). This technique is based on C-V and I-V measurements of the fully fabricated LDs. Using this technique, the changes in the capacitance and voltage correspond to the layer thickness and bandgap energy. To verify the effectiveness of the proposed technique, we first fabricated an LD array containing ten different SAG MQW structures, and examined the effects of the dimensional and compositional changes on the wavelength shift both theoretically and experimentally. From our examination, we found that a wavelength shift of 83 nm is obtained for an SAG mask pattern with an opening width of 100 µm, and that a cross point between both dimensional and compositional changes exists for this mask pattern. As the following step, the fabricated LD array was tested using the proposed technique, and the growth rate enhancement and bandgap energy were extracted from the measured C-V and I-V results. The extracted data for each array channel were compared with the simulation results, which were well-fitted from the photo-luminescence (PL) measurements. They both show good agreement with the simulation results.

Simple full-range carrier frequency offset estimation for high speed CO-OFDM.

We propose a simple, full-range carrier frequency offset (CFO) algorithm for coherent optical orthogonal frequency division multiplexing (CO-OFDM) systems. By applying the Chinese remainder theorem (CRT) to training symbol of single frequency, the proposed CFO algorithm has wide range with shorter training symbol. We numerically and experimentally demonstrate the performance of CRT-based algorithms in a 16-ary quadrature amplitude modulation (QAM) CO-OFDM system. The results show that the estimation range of the CRT-based algorithm is full-range corresponding to the sampling frequency. Also, the bit error ratio (BER) degradation of the proposed algorithm with one training symbol is negligible. These results indicate that the proposed algorithm can be used as a wide range CFO estimator with an increased data rate in high speed CO-OFDM systems.

Optimization of spot-size converter for low polarization dependent loss of waveguide photodetector.

We present an optimization of spot-size converter (SSC) of waveguide photodetector (PD) for small polarization dependent loss (PDL). Beam-propagation method simulation gives responsivity for each polarization and SSC structure. From the calculated responsivity data, optimum structure of SSC is determined that can be implemented with a sufficient process tolerance. We confirm the optimization by measuring PDL of waveguide PD designed according to the structure obtained through the simulation.

Channel estimation and synchronization for polarization-division multiplexed CO-OFDM using subcarrier/polarization interleaved training symbols.

We propose and demonstrate the use of subcarrier/polarization-interleaved training symbols for channel estimation and synchronization in polarization-division multiplexed (PDM) coherent optical orthogonal frequency-division multiplexed (CO-OFDM) transmission. The principle, the computational efficiency, and the frequency-offset tolerance of the proposed method are described. We show that the use of subcarrier/polarization interleaving doubles the tolerance to the frequency offset between the transmit laser and the receiver's optical local oscillator as compared to conventional schemes. Using this method, we demonstrate 43-Gb/s PDM CO-OFDM transmission with 16-QAM subcarrier modulation over 5,200-km of ultra-large-area fiber.

Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures.

Fabrication of normally-off field effect transistors (FETs) possessed uniform turn-on threshold voltage (Vth) is of special interests. In this work, they were fabricated using dry etching recess techniques under the gate region, with dry etching conditions of extremely low rate. We report how the recess depth under the gate area induced the Vth shift of normally-off FETs on AlGaN/GaN heterostructure, which were fabricated with a 1.5 nm/min etching rate. Chlorine-based inductively coupled plasma (ICP) was applied to perform the etching process for the AlGaN/GaN heterostructure. Devices were fabricated with different recess depths under the gate area, and examined to determine their performances, particularly the dependence of recess time and recess depth on Vth shift. The applied dry etching conditions resulted in a low-damaged and not-rough morphology on the etched surfaces of AlGaN/GaN. Fine controlled and well defined recess depth of the AlGaN/GaN heterostructure under the gate region was achieved with no etch-stop layers. Conventional fabrication processes were applied with the dry etching conditions of extremely low rate to fabricate normally-off MOSFETs of Al2O3/AlGaN/GaN. The achieved Vth of +5.64 V was high positive and the leakage current of off-state was measured as ~10-6 A/mm.

Stable two-wavelength lasers by use of a double alpha-type fiber cavity with fiber grating mirrors.

For high-frequency (20-200 GHz) modulated light sources, we developed and investigated two-wavelength lasers using the double alpha-type fiber cavities with fiber grating mirrors. For variations of polarization states and pump powers, parallel alpha-type coupled cavity lasers were found to be more stable than serial lasers.