Improvement of endurance and switching speed in Hf1-xZrxO2thin films using a nanolaminate structure.

To improve the endurance and polarization switching speed of Hf1-xZrxO2(HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2 + ZrO2(HZZ) nanolaminate structure. Three films with different ZrO2interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.92 nm) and six ZrO2(∼0.53 nm) layers; they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times. The formation of the tetragonal phase-like spacer between the ferroelectric polar regions appears to be the main factor associated with the reduction of the switching barrier and leads to the acceleration of the switching propagation over multiple domains.

A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices.

In this paper, we propose a method to improve the performance of TiN/Hf0.5Zr0.5O2 (HZO)/TiN Nano-capacitors used in memory devices. Instead of direct fabrication of the TiN/HZO/TiN device, our method involves an intermediate step in which W metal is used as a capping material to induce a large in-plane tensile strain during rapid thermal annealing, resulting in a total suppression of the monoclinic phase and the appearance of the ferroelectric phase. Consequently, after removing the W capping electrode through an etching process and the post-deposition of a TiN top electrode at room temperature, a high remnant polarization of approximately 40 µC cm-2 and a 65% increase of coercive field were obtained. Moreover, the leakage current was reduced by an order of magnitude compared to the normal TiN/HZO/TiN capacitor; this result is attributed to the presence (absence) of the W/HZO (TiN/HZO) top interface during thermal annealing. The formation of a TiO x interfacial layer at elevated temperatures, which pulls oxygen from the HZO layer, resulting in the formation of oxygen vacancies, is the main cause of the high leakage current through the TiN/HZO/TiN stacks. It was confirmed that the re-capped TiN/HZO/TiN capacitor has a comparable endurance to a normal capacitor. Our results offer the re-capping process as a promising approach to fabricating HfO2-based ferroelectric memory devices with various electrode materials.

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2ferroelectric device.

We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/Hf0.5Zr0.5O2(HZO)/TiN devices by controlling the number of oxygen vacancies and carbon contaminants. The ferroelectric properties of HZO film after HPOA at 250 °C for 30 min under different oxygen pressures from 0 to 80 bar were evaluated by electrical and structural characterizations. We found that a sample treated with an oxygen pressure at 40 bar exhibited large switchable polarization (2Pr) of approximately 38 and 47µC cm-2in its pristine and wake-up states, respectively. Compared to a control sample, an approximately 40% reduction in the wake-up effect was achieved after HPOA at 40 bar. Improved ferroelectric properties of HZO film can be explained by the appropriate amount of oxygen vacancies and reduced carbon contaminants after HPOA.

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2devices by control of oxygen-deficient layer.

The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO2based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrOxsuggest the strong effect of IrOxin controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation. W/HZO/IrOxdevices show high remnant polarization (2Pr) âˆ¼ 53µC cm-2, wake-up free endurance cycling characteristics, low leakage current with demonstration of low annealing temperature requirement as low as 350 °C, valuable for back-end-of-line integration. Further, sub-5 nm HZO thicknesses-based W/HZO/IrOxdevices demonstrate high 2Prand wake-up free ferroelectric characteristics, which can be promising for low power and high-density memory applications. 2.2 nm, 3 nm, and 4 nm HZO based W/HZO/IrOxdevices show 2Prvalues 13.54, 22.4, 38.23µC cm-2at 4 MV cm-1and 19.96, 30.17, 48.34µC cm-2at 5 MV cm-1, respectively, with demonstration of wake-up free ferroelectric characteristics.

Acute airway obstruction due to postoperative retropharyngeal hematoma after anterior cervical fusion: a retrospective analysis.

BACKGROUND: Acute airway obstruction (AAO) after anterior cervical fusion (ACF) can be caused by postoperative retropharyngeal hematoma, which requires urgent recognition and treatment. However, the causes, evaluation, and appropriate treatment of this complication are not clearly defined. The purpose of this retrospective review of a prospective database was to investigate etiologic factors related to the development of AAO due to postoperative hematoma after ACF and formulate appropriate prevention and treatment guidelines. METHODS: Cervical spinal cases treated at our academic institutions from 1998 to 2013 were evaluated. Demographic data, including factors related to hemorrhagic tendency, and operative data were analyzed. Patients who developed a hematoma were compared with those who did not to identify risk factors. Cases complicated by hematoma were reviewed, and times until development of hematoma and surgical evacuation were determined. Degrees of airway compromise and patient behavior were classified and evaluated. Treatment was selected according to the patient's status. RESULTS: Among 785 ACF procedures performed, there were nine cases (1.15%) of AAO. None of these nine patients had preoperative risk factors. In six patients (67%), the hematoma occurred within 24 h, whereas three patients (33%) presented with hematoma at a median of 72 h postoperatively. Four of the nine patients with AAO underwent evacuation of the hematoma. Two patients with inspiratory stridor, anterior neck swelling, and facial edema progressed to respiratory distress and their hematomas were removed by surgery, during which, sustained superficial venous bleeding was confirmed. Intubation was attempted several times in one patient with cyanosis, but is unsuccessful; cricothyroidotomy was performed in this patient and pumping in the small muscular arterial branches was confirmed in the operating room. All of the patients recovered without any complications. CONCLUSIONS: With rapid recognition and appropriate treatment, there were no long-term complications caused by postoperative hematoma. There were no specific preoperative risk factors for hematoma. Systematic evaluation and appropriate management can be helpful for preventing serious complications after development of a postoperative hematoma.

Revision surgery for curve progression after implant removal following posterior fusion only at a young age in the treatment of congenital scoliosis: A case report.

RATIONALE: Congenital scoliosis due to a hemivertebra creates a wedge-shaped deformity, which progresses and causes severe spinal deformities as an individual grows. The treatment of congenital scoliosis focuses on early diagnosis and appropriate surgical management before the development of severe deformity. PATIENT CONCERNS: We report the case of a 4-year-old male child with a left thoracolumbar scoliosis of 27° (T10-T12) due to a T11 hemivertebra who was treated by posterior fusion and pedicle screw fixation at the age of 4 years. The implant was removed due to pain secondary to implant prominence after 4 years without definitive revision surgery, which led to significant progression of the scoliosis, to 50°. The indication for posterior vertebral column resection (PVCR) is a congenital spinal deformity with a curve magnitude greater than 30° with fast progression. This includes documented progression of the curve by more than 5° in a 6- month period, failure of conservative treatment, or both. OUTCOMES: The patient underwent PVCR of the T11 hemivertebra. Nine years after the revision surgery with PVCR, the patient showed satisfactory results and his spine was well balanced. LESSONS: This case shows that removal of an implant that was not the only cause of curve progression at a young age may lead to progression of scoliosis and, therefore, should be avoided unless it is absolutely necessary. CONCLUSION: Congenital scoliosis due to a hemivertebra at a young age could be treated by hemivertebra resection or anterior and posterior epiphysiodesis as definitive surgical treatment. The patient was eventually treated with PVCR, which achieved satisfactory correction without curve progression in a long-term follow-up.