Compact photonic crystal spectrometer with resolution beyond the fabrication precision.

We present a compact silicon photonic crystal spectrometer with a footprint of 740 × 9 µm2 and excellent wavelength resolution (∼0.01 nm at single and <0.03 nm at multiple wavelength operation) across a telecom bandwidth of 10 nm. Although our design targets a wavelength resolution of 1.6 nm, within the current state-of-the-art fabrication precision of 2 nm, we achieve a resolution that exceeds these limits. This enhanced resolution is made possible by leveraging the random localization of light within the device.

Silicon nanocavity with a quality factor of 6.7 million fabricated by a CMOS-compatible process.

Here, we report on the increase of the quality-factors of photonic crystal nanocavities fabricated by a CMOS-compatible process. We fabricated nanocavities with the same cavity design but used either a binary photomask or a phase-shift photomask in the photolithography step to assess the impact of the photomask-type on the fabrication accuracy of the air holes. We characterized 62 cavities using time-resolved measurements and the best cavity had a quality-factor of 6.65 × 106. All cavities exhibited a quality-factor larger than 2 million and the overall average was 3.25 × 106. While the estimated magnitude of the scattering loss due to the air hole variations in the 33 cavities fabricated with the phase-shift photomask was slightly lower than that in the 29 cavities fabricated with binary photomask, the phase-shift photomask did not provide a significant improvement in the fabrication accuracy. On average, the scattering loss in these samples is more than 3 times larger than that of nanocavities fabricated using electron-beam lithography, which indicates room for further improvement.

Triggerless data acquisition in asynchronous optical-sampling terahertz time-domain spectroscopy based on a dual-comb system.

By using two mutually phase-locked optical frequency combs with slightly different repetition rates, we demonstrate asynchronous optical-sampling terahertz time-domain spectroscopy (ASOPS THz-TDS) without using any trigger signals or optical delay lines. Due to a tight stabilization of the repetition frequencies, it was possible to accumulate the data over 48 minutes in a triggerless manner without signal degradation. The fractional frequency stability of the measured terahertz signal is evaluated to be ∼8.0 × 10-17 after 730 s. The frequency accuracy of the obtained terahertz spectrum is ensured by phase-locking the two frequency combs to a frequency standard. To clarify the performance of our system, we characterized the absorption line of water vapor around 0.557 THz. The good agreement of the measured center frequency and linewidth with the values predicted from the HITRAN database verifies the suitability of our ASOPS THz-TDS system for precise measurements.

Polarization-sensitive terahertz time-domain spectroscopy system without mechanical moving parts.

We report on the measurement of terahertz electric-field vector waveforms by using a system that contains no mechanical moving parts. It is known that two phase-locked femtosecond lasers with different repetition rates can be used to perform time-domain spectroscopy without using a mechanical delay stage. Furthermore, an electro-optic modulator can be used to perform polarization measurements without rotating any polarizers or waveplates. We experimentally demonstrate the combination of these two methods and explain the analysis of data obtained by such a system. Such a system provides a robust platform that can promote the usage of polarization-sensitive terahertz time-domain spectroscopy in basic science and practical applications. For the experimental demonstration, we alter the polarization of a terahertz wave with a polarizer.

Ultra-precise determination of thicknesses and refractive indices of optically thick dispersive materials by dual-comb spectroscopy.

Precise measurements of the geometrical thickness of a sample and its refractive index are important for materials science, engineering, and medical diagnosis. Among the possible non-contact evaluation methods, optical interferometric techniques possess the potential of providing superior resolution. However, in the optical frequency region, the ambiguity in the absolute phase-shift makes it difficult to measure these parameters of optically thick dispersive materials with sufficient resolution. Here, we demonstrate that dual frequency-comb spectroscopy can be used to precisely determine the absolute sample-induced phase-shift by analyzing the data smoothness. This method enables simultaneous determination of the geometrical thickness and the refractive index of a planar sample with a precision of five and a half digits. The thickness and the refractive index at 193.414 THz (λ = 1550 nm) of a silicon wafer determined by this method are 0.5204737(19) mm and 3.475625(58), respectively, without any prior knowledge of the refractive index.

Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications.

Photonic integrated circuits (PICs) are emerging as a promising tool for accelerating matrix multiplications in deep learning. Previous PIC architectures, primarily focusing on the matrix-vector multiplication (MVM), have large hardware errors that increase with the device scale. In this work, we propose a novel PIC architecture for MVM, which features an intrinsically small hardware error that does not increase with the device scale. Moreover, we further develop this concept and propose a PIC architecture for the general matrix-matrix multiplication (GEMM), which allows the GEMM to be directly performed on a photonic chip with a high energy efficiency unattainable by parallel or sequential MVMs. This work provides a promising approach to realize a high fidelity and high energy efficiency optical computing platform.

Interferogram-based determination of the absolute mode numbers of optical frequency combs in dual-comb spectroscopy.

Dual-comb spectroscopy (DCS), which uses two optical frequency combs (OFCs), requires an accurate knowledge of the mode number of each comb line to determine spectral features. We demonstrate a fast evaluation method of the absolute mode numbers of both OFCs used in DCS system. By measuring the interval between the peaks in the time-domain interferogram, it is possible to accurately determine the ratio of one OFC repetition frequency (frep) to the difference between the frep values of the two OFCs (Δfrep). The absolute mode numbers can then be straightforwardly calculated using this ratio. This method is applicable to a broad range of Δfrep values down to several Hz without any additional instruments. For instance, the minimum required measurement time is estimated to be about 1 s for Δfrep ≈ 5.6 Hz and frep ≈ 60 MHz. The optical frequencies of the absorption lines of acetylene gas obtained by DCS with our method of mode number determination shows good agreement with the data from the HITRAN database.

Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing.

We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method. An average optical coupling loss per joint of 1.26 dB is obtained in C + L telecommunication bands (1530-1635 nm). The correlation between alignment offset and measured optical coupling loss is discussed with the frequency distribution of µ-TP samples. We also performed a photoluminescence measurement to investigate the material properties in the GaInAsP layer to see if they are distorted by the strong bending stress produced during the pick-up and print steps of the µ-TP process. The peak intensity reduction of 80-90% and a wavelength shift of 0-5 nm (blue shift) were observed after the process. The series of fundamental studies presented here, which combine multiple analyses, contribute to improving our understanding of III-V/Si photonic integration by µ-TP.

Simple and fully CMOS-compatible low-loss fiber coupling structure for a silicon photonics platform.

A simple low-loss fiber coupling structure consisting of a Si inverted-taper waveguide and a 435 nm wide and 290 nm thick SiN waveguide was fabricated with fully complementary metal-oxide semiconductor (CMOS)-compatible processes. The small SiN waveguide can expand to the optical field corresponding to a fiber with a mode-field diameter of 4.1 µm. The fiber-to-chip coupling losses were 0.25 and 0.51 dB/facet for quasi-TE and quasi-TM modes, respectively, at a 1550 nm wavelength. Polarization-dependent losses of the conversion in the Si-to-SiN waveguide transition and the fiber-to-chip coupling were less than 0.3 and 0.5 dB, respectively, in the wavelength range of 1520-1580 nm.

Polarization-sensitive dual-comb spectroscopy with an electro-optic modulator for determination of anisotropic optical responses of materials.

We propose and demonstrate a polarization-sensitive dual-comb spectroscopy (DCS) technique that employs an electro-optic modulator for determining the anisotropic optical responses of materials. This straightforward extension of the typical DCS setup directly provides amplitudes and phases in two mutually orthogonal directions of the electric field of light. Using this method, we determined the optic axis direction and the anisotropy in the complex refractive index of a sample whose optical parameter is well defined. We estimate a birefringence of the sample to be 5.49(55)×10-5 at a comb tooth in the 780 nm region.

Arbitrary reconfiguration of universal silicon photonic circuits by bacteria foraging algorithm to achieve reconfigurable photonic digital-to-analog conversion.

Reconfigurable/reprogrammable universal silicon photonic circuits represent a paradigm shift in designing photonic devices. However, it is very challenging to perform adaptive arbitrary reconfiguration when the high-dimensional solution of phase distribution cannot be explicitly determined, especially when there are random initial phase errors, which hinder the implementation of novel potential functions in universal circuits. This work presents an arbitrary black-box reconfiguration for universal circuits with random phase errors by a bacteria-foraging algorithm and unlocks a novel function of arbitrary-port-and-arbitrary-bit-resolution reconfigurable 6-bit photonic digital-to-analog conversion. This work offers a general and efficient method to ease multipurpose reconfiguration for universal silicon photonic circuits.

Interferometric autocorrelation of ultrafast optical pulses in silicon sub-micrometer p-i-n waveguides.

We investigated the high-sensitivity interferometric autocorrelation of ultrafast optical pulses utilizing two-photon absorption in sub-micrometer silicon p-i-n waveguides. The autocorrelation sensitivities were evaluated to be about 0.5 and 4.5 × 10-8 W2 for 1- and 0.5-mm devices, respectively. Such sensitivities are about 100 times higher than the traditional two-photon conductivity photodetectors in commercial autocorrelators; thus favor weak pulse characterization. We comprehensively studied the interferometric autocorrelation performances by the experiment and FDTD (finite-difference time-domain) simulation. The pulse energy dependences of measured autocorrelation photocurrents and pulse widths were well explained by the simulation with the free carrier absorption and free carrier plasma effect considered. The autocorrelation error tends to occur if the pulse energy is high enough to cause strong free carrier effects and the threshold pulse energy for error occurrence is increased for shorter devices, but accurate autocorrelation measurement was achieved for sub-Watts pulses at which the influences of free carrier effects on interferometric autocorrelation was negligible. The minimum applicable range of pulse widths was estimated from waveguide dispersion analysis to be ~0.09 and 0.13 ps with a 10% target error for 0.5-mm and 1-mm devices, respectively. The interferometric autocorrelation in sub-micrometer silicon p-i-n waveguides is promising as a monolithic photonic device for on-chip monitor and diagnostics of weak ultrafast pulses.

Silicon traveling-wave Mach-Zehnder modulator under distributed-bias driving.

The silicon traveling-wave (TW) Mach-Zehnder modulator (MZM) is one of the most important devices in silicon photonic transceivers for high-speed optical interconnects. Its phase shifter utilizes carrier depletion of pn diodes for high speed, but suffers low modulation efficiency. Extensive efforts have been made on pre-fabrication optimizations, including waveguides, doping, and electrodes to enhance high-frequency modulation efficiency. Instead, we here propose an adaptive post-fabrication distributed-bias driving method that enables 20%∼30% high-frequency efficiency enhancement at both 10 and 25 Gbps without doing any optimizations for a silicon TW-MZM. This method explores the bias nonlinearity of index modulation which, to the best of our knowledge, is utilized for the first time in driving silicon modulators to improve the efficiency. We demonstrated the viability of this adaptive driving concept to achieve better performance, and this Letter could open new avenues for silicon traveling-wave modulator design and performance trade-off.

Mib1 modulates dynamin 2 recruitment via Snx18 to promote Dll1 endocytosis for efficient Notch signaling.

Notch signaling regulates normal development and tissue homeostasis. Ligand endocytosis plays critical roles in Notch signaling activation. Endocytic proteins such as epsin and dynamin participate in Notch ligand activity by mediating Notch ligand endocytosis. The ubiquitin ligase Mib1 also plays essential roles in Notch signaling via Notch ligand ubiquitination. However, the molecular links between Mib1 and endocytic proteins have not been fully defined. Here, we show that Mib1 is involved in dynamin 2 recruitment to Dll1 and that Snx18, which interacts with dynamin 2, modestly regulates Dll1 endocytosis. Furthermore, the ubiquitin ligase activity of Mib1 is induced by Notch ligand-receptor interactions. Mib1 promotes the interaction between dynamin 2 and Snx18 in an ubiquitin ligase activity-dependent manner. These results suggest that Mib1 modulates dynamin recruitment by regulating the interaction between Snx18 and dynamin 2, thereby helping to ensure the efficient signaling activity of Notch ligands.

High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter.

We demonstrate a silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. Constructing a vertical p-n junction in a flat etchless SOI layer provides superior controllability and uniformity of carrier profiles. Moreover, the waveguide structure based on a thin a-Si:H strip line can be fabricated easily and precisely. Thanks to a large overlap between the depletion region and optical field in the SOI layer with a vertical p-n junction, the MZM provides 0.80- to 1.86-Vcm modulation efficiency and a 12.1- to 16.9-dBV loss-efficiency product, besides guaranteeing a 3-dB bandwidth of about 17 GHz and 28-Gbps high-speed operation. The αVπL is considerably lower than that of conventional high-speed modulators.

Ultrahigh-Q photonic crystal nanocavities fabricated by CMOS process technologies.

We fabricated photonic crystal high-quality factor (Q) nanocavities on a 300-mm-wide silicon-on-insulator wafer by using argon fluoride immersion photolithography. The heterostructure nanocavities showed an average experimental Q value of 1.5 million for 12 measured samples. The highest Q value was 2.3 million, which represents a record for a nanocavity fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible machinery. We also demonstrated an eight-channel drop filter with 4 nm spacing consisting of arrayed nanocavities with three missing air holes. The standard deviation in the drop wavelength was less than 1 nm. These results will accelerate ultrahigh-Q nanocavity research in various areas.

Optical autocorrelation performance of silicon wire p-i-n waveguides utilizing the enhanced two-photon absorption.

Optical autocorrelation accuracy was for the first time analyzed for the silicon waveguide based autocorrelators utilizing two-photon absorption (TPA) under various short pulse conditions by numerical simulation. As for autocorrelation operation in the sub-µm silicon p-i-n rib waveguides on the 220 nm SOI (silicon on insulator) wafers, the autocorrelation error of pulse width measurement gradually increases with the increase of the peak power for both Gaussian and hyperbolic secant pulses due to the influence of free-carrier absorption (FCA). For the same pulse type, the relative error is independent of the input pulse width; however different pulse type has different peak power dependency of the accuracy. It was verified that this thin rib waveguide has a TPA responsivity >60 times higher than the thick rib waveguides and the correct pulse width can be measured with a <1% relative error for characterizing ps/sub-ps short pulses of sub-watt peak powers by utilizing the silicon wire p-i-n waveguides as the autocorrelator detector.

Completely CMOS compatible SiN-waveguide-based fiber coupling structure for Si wire waveguides.

For Si wire waveguides, we designed a highly efficient fiber coupling structure consisting of a Si inverted taper waveguide and a CMOS-compatible thin SiN waveguide with an SiO2 spacer inserted between them. By using a small SiN waveguide with a 310 nm-square core, the optical field can be expanded to correspond to a fiber with a 4.0-µm mode field diameter. A coupled waveguide system with the SiN waveguide and Si taper waveguide can provide low-loss and low-polarization-dependent mode conversion. Both losses in fiber-SiN waveguide coupling and SiN-Si waveguide mode conversion are no more than 1 dB in a wide wavelength bandwidth from 1.36 µm to 1.65 µm. Through a detailed analysis of the effective refractive indices in the coupled waveguide system, we can understand mode conversion accurately and also derive guidelines for reducing the polarization dependence and for shortening device length.

[Outcomes of Bridge to Surgery for Obstructive Colorectal Cancer after Metallic Stent Placement in Our Hospital].

Recently, the endoscopic placement of self-expanding metallicstents (SEMSs)has become widespread for the treatment of acute malignant colorectal obstruction. This study was designed to evaluate the clinical outcomes of 22 patients with obstructive colorectal cancer who underwent SEMS placement as a bridge to surgery(BTS)from January 2012 to December 2015. The subjects comprised 15 men and 7 women with a mean age of 68.1 years. Placement and decompression were successfully achieved in all cases. No serious complications arose from the placement. After excluding 3 patients for whom preoperative chemotherapy or treatment for another disease was prioritized, the mean interval to surgery for the remaining 19 patients was 18.2 days. Operative anastomosis was performed in all patients except those who had tandem lesions. Although postoperative complications including minor leakage(n=1), surgical site infection(n=1), and ileus(n=1)were observed, the course was effective in most patients. Bridge to surgery is a relatively easy, safe, and effective method for the treatment of obstructive colorectal cancer that enables preoperative intestinal decompression and one-stage resection, preventing stoma creation.

Different combinations of Notch ligands and receptors regulate V2 interneuron progenitor proliferation and V2a/V2b cell fate determination.

The broad diversity of neurons is vital to neuronal functions. During vertebrate development, the spinal cord is a site of sensory and motor tasks coordinated by interneurons and the ongoing neurogenesis. In the spinal cord, V2-interneuron (V2-IN) progenitors (p2) develop into excitatory V2a-INs and inhibitory V2b-INs. The balance of these two types of interneurons requires precise control in the number and timing of their production. Here, using zebrafish embryos with altered Notch signaling, we show that different combinations of Notch ligands and receptors regulate two functions: the maintenance of p2 progenitor cells and the V2a/V2b cell fate decision in V2-IN development. Two ligands, DeltaA and DeltaD, and three receptors, Notch1a, Notch1b, and Notch3 redundantly contribute to p2 progenitor maintenance. On the other hand, DeltaA, DeltaC, and Notch1a mainly contribute to the V2a/V2b cell fate determination. A ubiquitin ligase Mib, which activates Notch ligands, acts in both functions through its activation of DeltaA, DeltaC, and DeltaD. Moreover, p2 progenitor maintenance and V2a/V2b fate determination are not distinct temporal processes, but occur within the same time frame during development. In conclusion, V2-IN cell progenitor proliferation and V2a/V2b cell fate determination involve signaling through different sets of Notch ligand-receptor combinations that occur concurrently during development in zebrafish.