Electrical properties of bilayer graphene synthesized using surface wave microwave plasma techniques at low temperature.

Bilayer graphene was synthesized at low temperature using surface wave microwave plasma techniques where poly(methyl metacrylate) (PMMA) and methane (CH4) were used as carbon sources. Temperature-dependent Hall effect measurements were carried out in a helium atmosphere. Sheet resistance, sheet carrier density and mobility showed weak temperature dependence for graphene from PMMA, and the highest carrier mobility is 740 cm2 V-1 s-1. For graphene from CH4, tunneling of the domain boundary limited carrier transport. The difference in average domain size was determined by Raman signal maps. In addition, residuals of PMMA were detected on graphene from PMMA. The low sheet resistances of graphene synthesized at a temperature of 280 °C using plasma techniques were explained by the PMMA related residuals rather than the domain sizes.

Transparent Patternable Large-Area Graphene p-n Junctions by Photoinduced Electron Doping.

We present a novel approach to achieve n-type doping in graphene and create graphene p-n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm2 V-1s-1 using Hall effect measurements. The precise control of doping and the creation of p-n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 µV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.

Patterning of graphene using wet etching with hypochlorite and UV light.

Graphene patterning via etching is important for enhancing or controling the properties of devices and supporting their applications in micro- and nano-electronic fields. Herein, we present a simple, low-cost, and scalable wet etching method for graphene patterning. The technique uses hypochlorite solution combined with ultraviolet light irradiation to rapidly remove unwanted graphene areas from the substrate. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy results showed that well-patterned graphene with micrometer scale regions was successfully prepared. Furthermore, graphene field effect transistor arrays were fabricated, and the obtained devices exhibited good current-voltage characteristics, with maximum mobility of ~ 1600 cm2/Vs, confirming the feasibility of the developed technique.

Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy.

The electrical properties of carbon nanotube thin-film transistors (CNT-FETs) fabricated using plasma-enhanced chemical vapor deposition (PECVD) were studied by scanning probe microscopy. The measured results suggest the formation of an island structure in the subthreshold regime and the disappearance of the island structure at the ON state. These results were explained by the change in the effective number of CNTs that contributed to the electrical conduction due to the gate-bias-dependent resistance of the semiconducting CNTs. The results obtained by Monte Carlo simulation revealed similar results. The effects of metallic CNTs with defects and the scatter of the drain current in the subthreshold regime were also examined.