RESUMO
We analyse the spinterface formed by a C60 molecular layer on a Fe(001) surface covered by a two-dimensional Cr4O5 layer. We consider different geometries, by combining the high symmetry adsorption sites of the surface with three possible orientations of the molecules in a fully relaxed Density Functional Theory calculation. We show that the local hybridization between the electronic states of the Cr4O5 layer and those of the organic molecules is able to modify the magnetic coupling of the Cr atoms. Both the intra-layer and the inter-layer magnetic interaction is indeed driven by O atoms of the two-dimensional oxide. We demonstrate that the C60 adsorption on the energetically most stable site turns the ferromagnetic intra-layer coupling into an antiferromagnetic one, and that antiferromagnetic to ferromagnetic switching and spin patterning of the substrate could be possible by adsorption on other sites.
RESUMO
The synthesis of silicene by direct growth on silver is characterized by the formation of multiple phases and domains, posing severe constraints on the spatial charge conduction towards a technological transfer of silicene to electronic transport devices. Here we engineer the silicene/silver interface by two schemes, namely, either through decoration by Sn atoms, forming an Ag2Sn surface alloy, or by buffering the interface with a stanene layer. Whereas in both cases Raman spectra confirm the typical features as expected from silicene, by electron diffraction we observe that a very well-ordered single-phase 4 × 4 monolayer silicene is stabilized by the decorated surface, while the buffered interface exhibits a sharp phase at all silicon coverages. Both interfaces also stabilize the ordered growth of a phase in the multilayer range, featuring a single rotational domain. Theoretical ab initio models are used to investigate low-buckled silicene phases (4 × 4 and a competing one) and various structures, supporting the experimental findings. This study provides new and promising technology routes to manipulate the silicene structure by controlled phase selection and single-crystal silicene growth on a wafer-scale.