RESUMO
We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.
RESUMO
Magnetoluminescence of the exciton bound to a neutral acceptor was measured to investigate the electronic structure of a shallow acceptor center in GaN. The application of magnetic fields along different directions with respect to the crystal c axis allowed us to determine the symmetry of the ground (Gamma(9)) and the first excited state (Gamma(7)) of the acceptor. The observed Zeeman splitting pattern has axial symmetry but can be explained well only by assuming a significant reduction of the spin-orbit interaction for this acceptor state. Because of this reduction, the energy structure of the neutral acceptor is found to be very sensitive to any local, axial perturbation.