Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 2 de 2
Filtrar
Mais filtros

Base de dados
Ano de publicação
Tipo de documento
Assunto da revista
Intervalo de ano de publicação
1.
Opt Express ; 32(2): 1890-1901, 2024 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-38297731

RESUMO

We investigate the temperature dependence of an in-band core-pumped thulium-doped fiber laser with a low SWaP (size, weight, and power) architecture. The temperature investigation is carried out both experimentally and numerically by a simulation model. We demonstrate experimentally that the investigated setup is resistant for temperatures till 353 K. In addition, we explain the observed behavior by considering the temperature depended spectroscopic parameters of thulium-doped silica fibers. Finally, a numerical investigation is carried out for higher temperatures up to 573 K and higher output powers up to 12 W as well as for different wavelengths and show that the considered fiber lasers works still efficient at these temperature ranges. We show the reliability of the considered thulium-doped fiber laser architecture for applications in harsh environment.

2.
Appl Opt ; 61(11): 3026-3033, 2022 Apr 10.
Artigo em Inglês | MEDLINE | ID: mdl-35471276

RESUMO

In this paper, the design of an efficient illuminator for extreme ultraviolet (EUV) applications such as photolithography, metrology, and microscopy is investigated. Illuminators are arrangements of optical components that allow us to tailor optical parameters to a targeted application. For the EUV spectral range, illuminators are commonly realized by an arrangement of several multilayer mirrors. Within this publication, design methods are developed to tailor optical parameters such as the intensity distribution, the spatial coherence, and the spectral bandwidth by using only one multilayer mirror. For the demonstration of the methods, an illuminator is designed for a compact in-lab EUV interference lithography system that is suited for industrial EUV resist qualification and large-area nanopatterning. The designed illuminator increases the wafer-throughput and improves the imaging quality.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA