Inverse design of an on-chip optical response predictor enabled by a deep neural network.

We proposed inverse-designed nanophotonic waveguide devices which have the desired optical responses in the wide band of 1450-1650 nm. The proposed devices have an ultra-compact size of just 1.5 µm × 3.0 µm and are designed on a silicon-on-insulator (SOI) waveguide platform. Individual nano-pixels with dimensions of 150 nm × 150 nm were made of either silicon or silicon dioxide, and the materials for the 200 total cells were determined using a trained deep neural network. While training the two networks, the hyperparameter optimization method was applied to make the training process efficient. We then fabricated the proposed devices using a CMOS-compatible fabrication process, and experimentally verified the fabricated device performance.

Demonstration of high-accuracy 3D imaging using a Si optical phased array with a tunable radiator.

Precise imaging in three-dimension (3D) is an essential technique for solid-state light detection and ranging (LiDAR). Among various solid-state LiDAR technologies, silicon (Si) optical phased array (OPA)-based LiDAR has the significant advantage of robust 3D imaging due to its high scanning speed, low power consumption, and compactness. Numerous techniques employing a Si OPA have utilized two-dimensional arrays or wavelength tuning for longitudinal scanning but the operation of those systems is restricted by additional requirements. Here, we demonstrate high-accuracy 3D imaging using a Si OPA with a tunable radiator. As we adapted a time-of-flight approach for distance measurement, we have developed an optical pulse modulator that allows a ranging accuracy of less than 2 cm. The implemented Si OPA is composed of an input grating coupler, multimode interferometers, electro-optic p-i-n phase shifters, and thermo-optic n-i-n tunable radiators. With this system, it is possible to attain a wide beam steering range of 45° in a transversal angle with a 0.7° divergence angle, and 10° in a longitudinal angle with a 0.6° divergence angle can be achieved using Si OPA. The character toy model was successfully imaged in three dimensions with a range resolution of 2 cm using the Si OPA. The further improvement of each component of the Si OPA will allow even more accurate 3D imaging over a longer distance.

Demonstration of beam steering using a passive silica optical phased array with wavelength tuning.

We demonstrate beam steering using a passive silica optical phased array (OPA) with wavelength tuning. In this OPA, a constant path difference is built up to assign sequential phase delays with a wavelength variation in arrayed waveguide channels for the beam steering. From as-fabricated 1 × 101 passive silica OPA chips, we successfully achieved beam forming with a transversal divergence angle of 0.57° at a 1548.3-nm wavelength and also beam steering of 15.4° by wavelength tuning of 30.7 nm. Combining a cylindrical lens in front of the end-fire radiators, the longitudinal divergence angle could be reduced from 13.0° to 0.42°. The side-mode suppression ratio of the beam was 10.3 dB at the center position. Through simulation, we analyzed the effects of the phase errors on the beam quality, due to the effective index fluctuation of the waveguide channels, and provided an allowable error range to attain beam forming from the passive OPA.

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips: publisher's note.

This publisher's note contains a correction to Opt. Lett. 47, 714 (2022).

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips.

We developed an inter-chip optical link using direct optical wire (DOW) bonding by open-to-air polymerization. An arch-shaped wire was drawn from a tip in a similar way to a metal wire, but the wire was formed from a polymer solution that solidified in the air during wiring. The DOW bonding was examined for silicon photonic chips where grating couplers are integrated for input/output coupling. Cone-shaped studs were formed at the ends of the wire, and their geometry was optimized using finite-difference time-domain simulation to give a mode conversion function. Although the polymer wire had a multimode scale of 7 µm, the wire bonding between the grating couplers showed a relatively low insertion loss of 5.8 dB at a wavelength of 1590 nm compared to a conventional connection using single-mode fiber blocks. It also showed a larger wavelength tolerance within the range of ∼1520-1590 nm. DOW bonding between a grating coupler and a single-mode fiber were also examined to verify the feasibility of out-of-plane connection with edge-coupling devices. The grating-to-fiber wire link also exhibited a large wavelength tolerance.

On-chip monitoring of far-field patterns using a planar diffractor in a silicon-based optical phased array.

We demonstrate the on-chip monitoring of far-field patterns in a silicon-based optical phased array (OPA) using a planar diffractor and traveling-wave photodetectors (PDs) integrated at the end of the radiator array. To reproduce the diffraction patterns within a silicon slab, the planar diffractor is designed with a diffraction region surrounded by an absorptive boundary and seven discrete outlet waveguides. Each outlet waveguide is linked to the photon-assisted tunneling PD which has a silicon p-n junction and is operated under a reverse bias to detect a sub-bandgap wavelength, 1.3 µm. With the 1×16 OPA and seven detectors, the positions of the main beams aligned to specific directions in the free space were clearly monitored.

Thermo-optic control of the longitudinal radiation angle in a silicon-based optical phased array.

We demonstrate longitudinal beam-steering with a 1×16 silicon optical phased array (OPA) using a monochromatic light source and thermo-optic control of the refractive index in the grating radiator region. The refractive index is controlled by forming a series of n-i-n heaters, placing i-regions in each radiator of the OPA. When the biased voltage in the heaters is increased, the refractive index of the radiator region is increased by the thermo-optic effect, and the longitudinal radiation angle is changed according to the Bragg condition. The transversal beam-steering is accomplished by phase control with the phase shifters, which are devised with a p-i-n diode using the electro-optic effect. With these electro-optic p-i-n phase shifters and n-i-n thermo-optic radiators, we achieve a relatively wide 2D beam-steering in a range of 10.0°/45.4° in the longitudinal/transversal directions with a 1.55 µm light source. The tuning efficiency is 0.016°/mW in the longitudinal beam-steering.

Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides.

We demonstrate silicon ridge waveguide photo-detectors capable of sub-bandgap light absorption and avalanche multiplication. The proposed waveguide photo-detectors contain highly doped PN junction, where a strong electric field can generate the photon-assisted tunneling current for sub-bandgap light incidence and amplify the generated photo-current by the avalanche multiplication effect. The voltage-dependent sub-bandgap absorption coefficient and multiplication gain are experimentally evaluated for various doping configurations to find optimal photo-response with low dark currents. As a result, our representative silicon waveguide photo-detector gives sub-bandgap responsivities of ~10 and ~2 A/W under the applied reverse bias voltage of -8.3 V for near-infrared wavelengths of 1.31 and 1.52 µm, respectively. The voltage-dependent frequency photo-response is also demonstrated with theoretical verification.

Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.

We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 µm width. At a 6° branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2 dB are achieved along with a thermal heating power of 151.5 mW.

40 Gb/s optical subassembly module for a multi-channel bidirectional optical link.

A 40 Gb/s bidirectional optical link using four-channel optical subassembly (OSA) modules and two different wavelengths for the up- and down-link is demonstrated. Widely separated wavelengths of 850 nm and 1060 nm are used to reduce the optical crosstalk between the up- and down-link signals. Due to the integration capabilities of silicon, the OSA is implemented, all based on silicon: V-grooved silicon substrates to embed fibers and silicon optical benches (SiOBs) to mount optical components. The SiOBs are separately prepared for array chips of photodiodes (PDs), vertical-cavity surface-emitting lasers (VCSELs), and monitoring PDs, which are serially configured on an optical fiber array for direct coupling to the transmission fibers. The separation of the up- and down-link wavelengths is implemented using a wavelength-filtering 45° mirror which is formed in the fiber under the VCSEL. To guide the light signal to the PD another 45° mirror is formed at the end of the fiber. The fabricated bidirectional OSA module shows good performances with a clear eye-diagram and a BER of less than 10(-12) at a data rate of 10 Gb/s for each of the channels with input powers of -8 dBm and -6.5 dBm for the up-link and the down-link, respectively. The measured inter-channel crosstalk of the bidirectional 40 Gb/s optical link is about -22.6 dB, while the full-duplex operation mode demonstrates negligible crosstalk between the up- and down-link.

Deep neural network-based phase calibration in integrated optical phased arrays.

Calibrating the phase in integrated optical phased arrays (OPAs) is a crucial procedure for addressing phase errors and achieving the desired beamforming results. In this paper, we introduce a novel phase calibration methodology based on a deep neural network (DNN) architecture to enhance beamforming in integrated OPAs. Our methodology focuses on precise phase control, individually tailored to each of the 64 OPA channels, incorporating electro-optic phase shifters. To effectively handle the inherent complexity arising from the numerous voltage set combinations required for phase control across the 64 channels, we employ a tandem network architecture, further optimizing it through selective data sorting and hyperparameter tuning. To validate the effectiveness of the trained DNN model, we compared its performance with 20 reference beams obtained through the hill climbing algorithm. Despite an average intensity reduction of 0.84 dB in the peak values of the beams compared to the reference beams, our experimental results demonstrate substantial agreements between the DNN-predicted beams and the reference beams, accompanied by a slight decrease of 0.06 dB in the side-mode-suppression-ratio. These results underscore the practical effectiveness of the DNN model in OPA beamforming, highlighting its potential in scenarios that necessitate the intelligent and time-efficient calibration of multiple beams.

N × N polymer matrix switches using thermo-optic total-internal-reflection switch.

We have developed fully non-blocking optical matrix switches using a thermo-optic polymer 1 × 2 total-internal-reflection (TIR) switch as a unit switching element. The TIR switch consists of crossed multimode polymer waveguides and an offset heater electrode at the switching node. The fabricated 4 × 4 and 8 × 8 optical matrix switch chips show excellent switching performances. The insertion losses are less than 2.5 and 4.5 dB for the 4 × 4 and 8 × 8 matrix switches, respectively, and their switching isolations during a turned-off state are higher than 38 dB. The switching time is about 3 ms, and the power consumption for each switching element is below 30 mW. Compact integration of the 4 × 4 and 8 × 8 switch chips is achieved at sizes of 25 mm × 4.25 mm, and 42.4 mm × 5 mm, respectively, through an optimization of the waveguide and heater geometries.

Fabrication of thermally stable and cost-effective polymeric waveguide for optical printed-circuit board.

A thermally stable polymeric optical waveguide has been fabricated using ultraviolet (UV)-curable epoxy resins for the core and clad materials. A simple and cost-effective fabrication method that uses reusable polydimethylsiloxane (PDMS) masters has been developed. The 12-channel under-clad layer of the UV-cured epoxy was prepared using a PDMS master whose embossed channels had been fabricated by a polycarbonate (PC) secondary master. The thermal stability of the fabricated waveguide was tested at 200 degrees C for one hour. The optical waveguide was not damaged physically by thermal stress. Propagation losses detected by a cut-back method were 0.16 dB/cm and 0.26 dB/cm, respectively, before and after the thermal stability test at 850 nm. Loss increase after the thermal treatment can be attributed to the formation of the absorbing and scattering sources. This waveguide can be applied for areas that require thermal stability such as an optical printed-circuit board.

High-efficiency and stable optical transmitter using VCSEL-direct-bonded connector for optical interconnection.

A high-efficiency optical transmitter module for PCB (printed circuit board)-based interconnections was fabricated using a bottom-emitting VCSEL. The bottom-emitting VCSEL was directly bonded by an epoxy on a 90 degrees -bent fiber connector which is inserted into the PCB to couple to the fiber layer embedded in the board. A ray trace simulation indicates that close contact between the VCSEL and the connector removes most of the losses due to Fresnel reflection and beam divergence. This tendency was experimentally identified. Thermal dissipation through the epoxy layer and the connector also improves significantly the power characteristics of the VCSEL. The VCSEL after bonding on the connector shows about 40% higher power compared to that of the bare VCSEL at the current showing a peak power before bonding. The results indicate that direct bonding improves both optical and electrical efficiencies. A successful eye diagram at the speed of 5 Gb/s/ch with 850 nm was accomplished from the VCSEL-direct-bonded transmitter module.

Experimental demonstration of 10 Gbit/s transmission with an optical backplane system using optical slots.

A practical optical backplane system was prepared with transmitter-receiver processing boards and an optical backplane made from polymeric-waveguide-embedded optical printed-circuit boards. Optical slots were used as connection components between the transmitter-receiver processing boards and the backplane board to permit easy and repeatable insertion and extraction of the boards with micrometer precision. We report 10 Gbit/s data transmission between an optical backplane and the transmitter-receiver processing boards.