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Materials capable of emitting ultraviolet (UV) radiation are sought for applications ranging from theranostics or photodynamic therapy to specific photocatalysis. The nanometer size of these materials, as well as excitation with near-infrared (NIR) light, is essential for many applications. Tetragonal tetrafluoride LiY(Gd)F4nanocrystalline host for up-converting Tm3+-Yb3+activator-sensitizer pair is a promising candidate to achieve UV-vis up-converted radiation under NIR excitation, important for numerous photo-chemical and bio-medical applications. Here, we provide insights into the structure, morphology, size and optical properties of up-converting LiYF4:25%Yb3+0.5%Tm3+colloidal nanocrystals, where 1, 5, 10, 20, 30 and 40% of Y3+ions were substituted with Gd3+ions. Low gadolinium dopant concentrations modify the size and up-conversion luminescence, while the Gd3+doping that is exceeding the structure resistance limit of the tetragonal LiYF4results in appearance of foreign phase and significant decrease of luminescence intensity. The intensity and kinetic behavior of Gd3+up-converted UV emission are also analyzed for various gadolinium ions concentrations. The obtained results form a background for further optimized materials and applications based on LiYF4nanocrystals.
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Rare earth-based monopnictides are among the most intensively studied groups of materials in which extremely large magnetoresistance has been observed. This study explores magnetotransport properties of two representatives of this group, DyBi and HoBi. The extreme magnetoresistance is discovered in DyBi and confirmed in HoBi. At [Formula: see text] K and in [Formula: see text] T for both compounds, magnetoresistance reaches the order of magnitude of [Formula: see text]. For both materials, standard Kohler's rule is obeyed only in the temperature range from 50 to 300 K. At lower temperatures, extended Kohler's rule has to be invoked because carrier concentrations and mobilities strongly change with temperature and magnetic field. This is further proven by the observation of a quite rare temperature-dependence of oscillation frequencies in Shubnikov-de Haas effect. Rate of this dependence clearly changes at Néel temperature, reminiscent of a novel magnetic band splitting. Multi-frequency character of the observed Shubnikov-de Haas oscillations points to the coexistence of electron- and hole-type Fermi pockets in both studied materials. Overall, our results highlight correlation of temperature dependence of the Fermi surface with the magnetotransport properties of DyBi and HoBi.
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The prediction of non-trivial topological electronic states in half-Heusler compounds makes these materials good candidates for discovering new physics and devices as half-Heusler phases harbour a variety of electronic ground states, including superconductivity, antiferromagnetism, and heavy-fermion behaviour. Here, we report a systematic studies of electronic properties of a superconducting half-Heusler compound YPtBi, in its normal state, investigated using angle-resolved photoemission spectroscopy. Our data reveal the presence of a Dirac state at the [Formula: see text] point of the Brillouin zone at 500 meV below the Fermi level. We observe the presence of multiple Fermi surface pockets, including two concentric hexagonal and six half-oval shaped pockets at the [Formula: see text] and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the Fermi level, this is also supported by the first-principles calculations. Our findings of a Dirac state in YPtBi contribute to the establishing of half-Heusler compounds as a potential platform for novel topological phases.
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The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the [Formula: see text] and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.
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Platinum ditelluride has recently been characterized, based on angle-resolved photoemission spectroscopy data and electronic band structure calculations, as a possible representative of type-II Dirac semimetals. Here, we report on the magnetotransport behavior (electrical resistivity, Hall effect) in this compound, investigated on high-quality single-crystalline specimens. The magnetoresistance (MR) of PtTe2 is large (over 3000% at T = 1.8 K in B = 9 T) and unsaturated in strong fields in the entire temperature range studied. The MR isotherms obey a Kohler's type scaling with the exponent m = 1.69, different from the case of ideal electron-hole compensation. In applied magnetic fields, the resistivity shows a low-temperature plateau, characteristic of topological semimetals. In strong fields, well-resolved Shubnikov - de Haas (SdH) oscillations with two principle frequencies were found, and their analysis yielded charge mobilities of the order of 103 cm2 V-1 s-1 and rather small effective masses of charge carriers, 0.11 me and 0.21 me. However, the extracted Berry phases point to trivial character of the electronic bands involved in the SdH oscillations. The Hall effect data corroborated a multi-band character of the electrical conductivity in PtTe2, with moderate charge compensation.
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Several rare-earth monopnictides were shown to exhibit extreme magnetoresistance and field-induced low-temperature plateau of electrical resistivity. These features are also hallmarks of topological semimetals, thus the family is intensively explored with respect to magneto-transport properties and possible hosting Dirac fermion states. We report a comprehensive investigation of Fermi surface and electrical transport properties of LuSb, another representative of this family. At low temperatures, the magnetoresistance of LuSb was found to exceed 3000% without saturation in fields up to 9 T. Analysis of the Hall effect and the Shubnikov-de Haas oscillations revealed that the Fermi surface of this compound consists of several pockets originating from fairly compensated multi-band electronic structure, in full accordance with our first-principles calculations. Observed magnetotransport properties of LuSb can be attributed to the topology of three-dimensional Fermi surface and a compensation of electron and hole contributions.
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Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov-de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.
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We observed the coexistence of superconductivity and antiferromagnetic order in the single-crystalline ternary pnictide HoPdBi, a plausible topological semimetal. The compound orders antiferromagnetically at TN = 1.9 K and exhibits superconductivity below Tc = 0.7 K, which was confirmed by magnetic, electrical transport and specific heat measurements. The specific heat shows anomalies corresponding to antiferromagnetic ordering transition and crystalline field effect, but not to superconducting transition. Single-crystal neutron diffraction indicates that the antiferromagnetic structure is characterized by the propagation vector. Temperature variation of the electrical resistivity reveals two parallel conducting channels of semiconducting and metallic character. In weak magnetic fields, the magnetoresistance exhibits weak antilocalization effect, while in strong fields and temperatures below 50 K it is large and negative. At temperatures below 7 K Shubnikov-de Haas oscillations with two frequencies appear in the resistivity. These oscillations have non-trivial Berry phase, which is a distinguished feature of Dirac fermions.
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We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material.