RESUMO
Oxidation of cerium metal is a complex process which is strongly affected by the presence of water vapor in the oxidative atmosphere. Here, we explore, by means of infrared reflection-absorption spectroscopy (IRRAS) and Raman scattering spectroscopies, thin oxide films, formed on cerium metal during oxidation, under dry vs ambient (humid) air conditions (â¼0.2% and â¼50% relative humidities, respectively) and compare them with a thin film of CeO2deposited on a Si substrate. Complementary analysis of the thin films using x-ray diffraction and focused ion beam-scanning electron microscopy enables the correlation between their structure and spectroscopic characterizations. The initial oxidation of cerium metal results in the formation of highly sub-stoichiometric CeO2-x. Under dry air conditions, a major fraction of that oxide reacts with oxygen to form CeOâ¼2, which is spectroscopically detected by Raman scatteringF2gsymmetry mode and by IRAASF1usymmetry mode, splitted into doubly-degenerate transverse optic and mono-degenerate longitudinally optic (LO) modes. In contrast, under ambient (humid) conditions, the oxide formed is more heterogenous, as the reaction of CeO2-xdiverges towards the dominant formation of Ce(OH)3. Prior to the spectral emergence of Ce(OH)3, hydrogen ions incorporate into the highly sub-stoichiometric oxide, as manifested by Ce-H local vibrational mode detected in the Raman spectrum. The spectroscopic response of the thin oxide layer thus formed is more complex; particularly noted is the absence of the LO mode. It is attributed to the high density of microstructural and compositional defects in the oxide layer, which results in a heterogenous dielectric nature of the thin film, far from being representable by a single phase of CeOâ¼2.