Fourier ptychographic dark field x-ray microscopy.

Dark-field x-ray microscopy (DFXM) is an x-ray imaging technique for mapping three-dimensional (3D) lattice strain and rotation in bulk crystalline materials. At present, these maps of local structural distortions are derived from the raw intensity images using an incoherent analysis framework. In this work, we describe a coherent, Fourier ptychographic approach that requires little change in terms of instrumentation and acquisition strategy, and may be implemented on existing DFXM instruments. We demonstrate the method experimentally and are able to achieve quantitative phase reconstructions of thin film samples and maps of the aberrations in the objective lens. The method holds particular promise for the characterization of crystalline materials containing weak structural contrast.

High Velocity, Low-Voltage Collective In-Plane Switching in (100) BaTiO3 Thin Films.

Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly-correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano- and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly-relaxed (100) BaTiO3 films are synthesized. Thermal strain induces a strongly-correlated domain structure with alternating domains of polarization along the [010] and [001] in-plane axes and 90° domain walls along the [011] or [01 1 ¯ $\bar{1}$ ] directions. Simultaneous capacitance-voltage measurements and band-excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s-1 at 5 V (7 kV cm-1 ), orders-of-magnitude faster than expected. These combinations of properties are promising for high-speed tunable dielectrics and low-voltage ferroelectric memories and logic.