Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit.

Antiferromagnetic spintronics1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials3,4. Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Enhancement of the anomalous Hall effect by distorting the Kagome lattice in an antiferromagnetic material.

In topological magnetic materials, the topology of the electronic wave function is strongly coupled to the structure of the magnetic order. In general, ferromagnetic Weyl semimetals generate a strong anomalous Hall conductivity (AHC) due to a large Berry curvature that scales with their magnetization. In contrast, a comparatively small AHC is observed in noncollinear antiferromagnets. We investigated HoAgGe, an antiferromagnetic (AFM) Kagome spin-ice compound, which crystallizes in a hexagonal ZrNiAl-type structure in which Ho atoms are arranged in a distorted Kagome lattice, forming an intermetallic Kagome spin-ice state in the ab-plane. It exhibits a large topological Hall resistivity of ~1.6 µΩ-cm at 2.0 K in a field of ~3 T owing to the noncoplanar structure. Interestingly, a total AHC of 2,800 Ω-1 cm-1 is observed at ~45 K, i.e., 4 TN, which is quite unusual and goes beyond the normal expectation considering HoAgGe as an AFM Kagome spin-ice compound with a TN of ~11 K. We demonstrate further that the AHC below TN results from the nonvanishing Berry curvature generated by the formation of Weyl points under the influence of the external magnetic field, while the skew scattering led by Kagome spins dominates above the TN. These results offer a unique opportunity to study frustration in AFM Kagome lattice compounds.

Interplay between Magnetism and Topology: Large Topological Hall Effect in an Antiferromagnetic Topological Insulator, EuCuAs.

Magnetic interactions in combination with nontrivial band structures can give rise to several exotic physical properties such as a large anomalous Hall effect, the anomalous Nernst effect, and the topological Hall effect (THE). Antiferromagnetic (AFM) materials exhibit the THE due to the presence of nontrivial spin structures. EuCuAs crystallizes in a hexagonal structure with an AFM ground state (Néel temperature ∼ 16 K). In this work, we observe a large topological Hall resistivity of ∼7.4 µΩ-cm at 13 K which is significantly higher than the giant topological Hall effect of Gd2PdSi3 (∼3 µΩ-cm). Neutron diffraction experiments reveal that the spins form a transverse conical structure during the metamagnetic transition, resulting in the large THE. In addition, by controlling the magnetic ordering structure of EuCuAs with an external magnetic field, several fascinating topological states such as Dirac and Weyl semimetals have been revealed. These results suggest the possibility of spintronic devices based on antiferromagnets with tailored noncoplanar spin configurations.

Symmetry-controlled SrRuO3/SrTiO3/SrRuO3magnetic tunnel junctions: spin polarization and its relevance to tunneling magnetoresistance.

Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO3/SrTiO3/SrRuO3(001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR effect is driven by symmetry matching (mismatching) of the incoming and outcoming Bloch states in the SrRuO3(001) electrodes and evanescent states in the SrTiO3(001) barrier. We argue that under the conditions of symmetry-controlled transport, spin polarization, whatever definition is used, is not a relevant measure of spin-dependent tunneling. In the presence of diffuse scattering, however, e.g. due to localized states in the band gap of the tunnel barrier, symmetry matching is no longer valid and TMR in SrRuO3/SrTiO3/SrRuO3(001) MTJs is strongly reduced. Under these conditions, the spin polarization of the interface transmission function becomes a valid measure of TMR. These results provide an important insight into understanding and optimizing TMR in all-oxide MTJs.

Giant Room-Temperature Topological Hall Effect in a Square-Net Ferromagnet LaMn2Ge2.

A topological magnetic material showcases a multitude of intriguing properties resulting from the compelling interplay between topology and magnetism. These include notable phenomena such as a large anomalous Nernst effect (ANE), an anomalous Hall effect (AHE), and a topological Hall effect (THE). In most cases, topological transport phenomena are prevalent at temperatures considerably lower than room temperature, presenting a challenge for practical applications. However, the noncollinear ferromagnetic (FM) LaMn2Ge2, characterized by a Mn square-net lattice and a notably high Curie temperature (TC) of approximately 325 K, defies this trend as a topological semimetal. This work observes a giant topological Hall resistivity, ρ y x T $\rho _{yx}^T$ , of ≈4.5 µΩ cm at room temperature when the angle between the applied field and the c-axis is 75°, which is significantly higher than state-of-the-art materials with noncoplanar spin structures. The single crystal neutron diffraction measurements agree with an incommensurate conical magnetic structure as the ground state. This observation suggests the enhanced spin chirality resulting from the noncoplanar spin configuration when the applied field is away from the magnetic easy axis as the origin of a large contribution to the observed THE. The findings unequivocally demonstrate that the FM LaMn2Ge2 holds great promise as a potential topological semimetal for spintronic applications even at room temperature.

Revisiting Porcine Circovirus Infection: Recent Insights and Its Significance in the Piggery Sector.

Porcine circovirus (PCV), a member of the Circoviridae family within the genus Circovirus, poses a significant economic risk to the global swine industry. PCV2, which has nine identified genotypes (a-i), has emerged as the predominant genotype worldwide, particularly PCV2d. PCV2 has been commonly found in both domestic pigs and wild boars, and sporadically in non-porcine animals. The virus spreads among swine populations through horizontal and vertical transmission routes. Despite the availability of commercial vaccines for controlling porcine circovirus infections and associated diseases, the continuous genotypic shifts from a to b, and subsequently from b to d, have maintained PCV2 as a significant pathogen with substantial economic implications. This review aims to provide an updated understanding of the biology, genetic variation, distribution, and preventive strategies concerning porcine circoviruses and their associated diseases in swine.

Anomalous Hall Conductivity and Nernst Effect of the Ideal Weyl Semimetallic Ferromagnet EuCd2 As2.

Weyl semimetal is a unique topological phase with topologically protected band crossings in the bulk and robust surface states called Fermi arcs. Weyl nodes always appear in pairs with opposite chiralities, and they need to have either time-reversal or inversion symmetry broken. When the time-reversal symmetry is broken the minimum number of Weyl points (WPs) is two. If these WPs are located at the Fermi level, they form an ideal Weyl semimetal (WSM). In this study, intrinsic ferromagnetic (FM) EuCd2 As2 are grown, predicted to be an ideal WSM and studied its electronic structure by angle-resolved photoemission spectroscopy, and scanning tunneling microscopy which agrees closely with the first principles calculations. Moreover, anomalous Hall conductivity and Nernst effect are observed, resulting from the non-zero Berry curvature, and the topological Hall effect arising from changes in the band structure caused by spin canting produced by magnetic fields. These findings can help realize several exotic quantum phenomena in inorganic topological materials that are otherwise difficult to assess because of the presence of multiple pairs of Weyl nodes.

Large Room Temperature Anomalous Transverse Thermoelectric Effect in Kagome Antiferromagnet YMn6 Sn6.

Kagome magnets possess several novel nontrivial topological features owing to the strong correlation between topology and magnetism that extends to their applications in the field of thermoelectricity. Conventional thermoelectric (TE) devices use the Seebeck effect to convert heat into electrical energy. In contrast, transverse thermoelectric devices based on the Nernst effect are attracting recent attention due to their unique transverse geometry, which uses a single material to eliminate the need for a multitude of electrical connections compared to conventional TE devices. Here, a large anomalous transverse thermoelectric effect of ≈2 µV K-1 at room temperature in a kagome antiferromagnet YMn6 Sn6 single crystal is obtained. The obtained value is larger than that of state-of-the-art canted antiferromagnetic (AFM) materials and comparable with ferromagnetic systems. The large anomalous Nernst effect (ANE) can be attributed to the net Berry curvature near the Fermi level. Furthermore, the ANE of the AFM YMn6 Sn6 exceeds the magnetization scaling relationship of conventional ferromagnets. The results clearly illustrate that AFM material YMn6 Sn6 is an ideal topological material for room-temperature transverse thermoelectric applications.

Ferromagnetism at Room Temperature Induced by Spin Structure Change in BiFe1-x Cox O3 Thin Films.

The coexistence and coupling of ferromagnetic and ferroelectric orders in a single material is crucial for realizing next-generation multifunctional applications. The coexistence of such orders is confirmed at room temperature in epitaxial thin films of BiFe1-x Cox O3 (x ≤ 0.15), which manifests a spin structure change from a low-temperature cycloidal one to a high-temperature collinear one with canted ferromagnetism.

Half-Metallic Behavior in Doped Sr2CrOsO6 Double Perovskite with High Transition Temperature.

Half-metallic magnets with metallic behavior in one spin channel and insulating in the other, have attracted considerable attention due to their potential application possibility. The spin-dependent nature of the carrier scattering due to half-metallic nature of these materials, allows for the resistance to be strongly influenced by the low magnetic field. However, the operating temperatures of such known materials are generally low, opening up the need for half-metallic magnets with high transition temperatures. The double perovskites having general formula A2BB'O6 with alternating ordered arrangement of two transition metal sites, B and B' offer an attractive possibility in this respect. Here, we consider the case of Sr2CrOsO6, which is a ferrimagnetic insulator with transition temperature (Tc) of 725 K, highest ever known in the oxide family, and show that moderate amount of La and Na doping at Sr site can drive the compound half-metallic with high Tc.