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1.
Theory of photoabsorption in modulation-doped semiconductor quantum wells.
Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 35(3): 1300-1315, 1987 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-9941538
2.
Electronic properties and optical-absorption spectra of GaAs-AlxGa1-xAs quantum wells in externally applied electric fields.
Sanders GD; Bajaj KK.
Phys Rev B Condens Matter ; 35(5): 2308-2320, 1987 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9941681
3.
Electronic properties and optical-absorption spectra of graded-gap GaAs-AlxGa
Sanders GD; Bajaj KK.
Phys Rev B Condens Matter ; 36(9): 4849-4857, 1987 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9943502
4.
Optical properties in modulation-doped GaAs-Ga1-xAlxAs quantum wells.
Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 31(10): 6892-6895, 1985 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9935599
5.
Effects of uniaxial stress on the electronic and optical properties of GaAs-AlxGa1-xAs quantum wells.
Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 32(6): 4282-4285, 1985 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9937604
6.
Band-mixing effect on the emission spectrum of modulation-doped semiconductor quantum wells.
Chang YC; Sanders GD.
Phys Rev B Condens Matter ; 32(8): 5521-5524, 1985 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9937791
7.
Effect of band hybridization on exciton states in GaAs-AlxGa1-xAs quantum wells.
Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 32(8): 5517-5520, 1985 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9937790
8.
Theory of optical properties of quantum wires in porous silicon.
Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 45(16): 9202-9213, 1992 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-10000786
9.
Long-lived excitons in InAs quantum wells under uniaxial stress.
Chu H; Sanders GD; Chang YC.
Phys Rev B Condens Matter ; 36(15): 7955-7963, 1987 Nov 15.
Artigo em Inglês | MEDLINE | ID: mdl-9942593
10.
Wave-packet dynamics in quantum wells.
Kuznetsov AV; Sanders GD; Stanton CJ.
Phys Rev B Condens Matter ; 52(16): 12045-12055, 1995 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9980346
11.
Theory of transport in silicon quantum wires.
Sanders GD; Stanton CJ; Chang YC.
Phys Rev B Condens Matter ; 48(15): 11067-11076, 1993 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-10007413
12.
Excitonic transitions in GaAs/GaxAl1-xAs quantum wells observed by photoreflectance spectroscopy: Comparison with a first-principles theory.
Theis WM; Sanders GD; Leak CE; Bajaj KK; Morkoc H.
Phys Rev B Condens Matter ; 37(6): 3042-3051, 1988 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9944882
13.
New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies.
Miller RC; Gossard AC; Sanders GD; Chang YC; Schulman JN.
Phys Rev B Condens Matter ; 32(12): 8452-8454, 1985 Dec 15.
Artigo em Inglês | MEDLINE | ID: mdl-9937049
14.
Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers.
Sanders GD; Sun C; Golubovic B; Fujimoto JG; Stanton CJ.
Phys Rev B Condens Matter ; 54(11): 8005-8020, 1996 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9984478
15.
Electric-field effects of the excitons in asymmetric triangular AlxGa1-xAs-GaAs quantum wells.
Yu PW; Reynolds DC; Sanders GD; Bajaj KK; Stutz CE; Evans KR.
Phys Rev B Condens Matter ; 43(5): 4344-4348, 1991 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9997788
16.
Carrier-gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment.
Sanders GD; Sun C; Fujimoto JG; Choi HK; Wang CA; Stanton CJ.
Phys Rev B Condens Matter ; 50(12): 8539-8558, 1994 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9974872
17.
Determination of transition energies and oscillator strengths in GaAs-AlxGa1-xAs multiple quantum wells using photovoltage-induced photocurrent spectroscopy.
Yu PW; Sanders GD; Reynolds DC; Bajaj KK; Litton CW; Klem J; Huang D; Morkoç H.
Phys Rev B Condens Matter ; 35(17): 9250-9258, 1987 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9941326
18.
Electric field dependence of exciton transition energies in GaAs-AlxGa
Yu PW; Sanders GD; Evans KR; Reynolds DC; Bajaj KK; Stutz CE; Jones RL.
Phys Rev B Condens Matter ; 38(11): 7796-7799, 1988 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9945509
19.
Extrinsic contributions to photoreflectance of AlxGa1-xAs/GaAs quantum wells: An investigation of the "donor-related" feature.
Theis WM; Sanders GD; Evans KR; Liou LL; Leak CE; Bajaj KK; Stutz CE; Jones RL; Chang YC.
Phys Rev B Condens Matter ; 39(15): 11038-11043, 1989 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9947918
20.
Excited states of the light- and heavy-hole free excitons observed in photoreflectance.
Theis WM; Sanders GD; Leak CE; Reynolds DC; Chang YC; Alavi K; Colvard C; Shidlovsky I.
Phys Rev B Condens Matter ; 39(2): 1442-1445, 1989 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948350
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