Fast electron transport in metal organic vapor deposition grown dye-sensitized ZnO nanorod solar cells.

The electron transport in dye-sensitized solar cells with a MOCVD (metal organic vapor deposition)-grown ZnO nanorod array (ZnO-N) or a mesoporous film prepared from ZnO colloids (ZnO-C) as the working electrode was compared. The electrodes were of similar thickness (2 mum) and sensitized with zinc(II) meso-tetrakis(3-carboxyphenyl)porphyrin, while the electrolyte was I(-)/I(3)(-) in 3-methoxypropionitrile. Electron transport in the ZnO-C cells was comparable with that found for colloidal TiO(2) films (transport time approximately 10 ms) and was light intensity dependent. Electron transport in solar cells with ZnO-N electrodes was about 2 orders of magnitude faster ( approximately 30 mus). Thus, the morphology of the working ZnO electrode plays a key role for the electron transport properties.

Binding studies of molecular linkers to ZnO and MgZnO nanotip films.

Two bifunctional linkers, a rigid-rod p-ethynyl-isophthalic acid capped with a Ru(II)-polypyridyl complex and 3-mercaptopropionic acid, were covalently bound to ZnO nanotip films grown by metal-organic chemical vapor deposition (MOCVD) technology. This highly vertically aligned, crystalline form of ZnO had not been functionalized before. The binding was studied by Fourier transform (FT) IR and UV spectroscopies and probed, in the case of the Ru complex, by static and dynamic fluorescence quenching. The molecules did bind through the carboxylic acid groups, and the FT-IR attenuated total reflectance spectra are indicative of a bidentate carboxylate binding mode. Other molecules (heptanoic acid, isophthalic acid, and trimethoxy(2-phenylethyl)silane) were also bound to the ZnO nanotips. A comparison was made with epitaxial ZnO films grown by MOCVD and ZnO mesoporous films prepared from colloidal solutions to investigate the effect of the ZnO morphology. The ZnO nanotips were excellent binding substrates, particularly for the rigid-rod linker. Since ZnO films are etched at low pH (< 4), novel nanotip films made of ternary MgxZn1-xO, which is formed by alloying ZnO with MgO and is more resistant to acids, were developed. The MgxZn1-xO nanotip films were employed to use linkers with acidic groups and to study the effect of pH pretreatment of the surface on the binding.

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO3 substrates.

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128 degrees Y-cut LiNbO3. The ZnO nanotips are grown by metalorganic chemical vapor deposition (MOCVD) on the top of a SiO2 layer that is deposited and patterned on the LiNbO3 SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.