RESUMO
Replacement of the toxic heavy element lead in metal halide perovskites has been attracting a great interest because the high toxicity and poor air stability are two of the major barriers for their widespread utilization. Recently, mixed-cation double perovskite halides, also known as elpasolites, were proposed as an alternative lead-free candidate for the design of nontoxic perovskite solar cells. Herein, we report a new nontoxic and air stable lead-free all-inorganic semiconductor Rb4Ag2BiBr9 prepared using the mixed-cation approach; however, Rb4Ag2BiBr9 adopts a new structure type (Pearson's code oP32) featuring BiBr6 octahedra and AgBr5 square pyramids that share common edges and corners to form a unique 2D layered non-perovskite structure. Rb4Ag2BiBr9 is also demonstrated to be thermally stable with the measured onset decomposition temperature of To = 520 °C. Optical absorption measurements and density functional theory calculations suggest a nearly direct band gap for Rb4Ag2BiBr9. Room temperature photoluminescence (PL) measurements show a broadband weak emission. Further, temperature-dependent and power-dependent PL measurements show a strong competition between multiple emission centers and suggest the coexistence of defect-bound excitons and self-trapped excitons in Rb4Ag2BiBr9.
RESUMO
We report the synthesis, crystal and electronic structures, as well as optical properties of the hybrid organic-inorganic compounds MA2CdX4 (MA = CH3NH3; X = Cl, Br, I). MA2CdI4 is a new compound, whereas, for MA2CdCl4 and MA2CdBr4, structural investigations have already been conducted but electronic structures and optical properties are reported here for the first time. Single crystals were grown through slow evaporation of MA2CdX4 solutions with optimized conditions yielding mm-sized colorless (X = Cl, Br) and pale yellow (X = I) crystals. Single crystal and variable temperature powder X-ray diffraction measurements suggest that MA2CdCl4 forms a 2D layered perovskite structure and has two structural transitions at 283 and 173 K. In contrast, MA2CdBr4 and MA2CdI4 adopt 0D K2SO4-derived crystal structures based on isolated CdX4 tetrahedra and show no phase transitions down to 20 K. The contrasting crystal structures and chemical compositions in the MA2CdX4 family impact their air stabilities, investigated for the first time in this work; MA2CdCl4 is air-stable, whereas MA2CdBr4 and MA2CdI4 partially decompose when left in air. Optical absorption measurements suggest that MA2CdX4 have large optical band gaps above 3.9 eV. Room temperature photoluminescence spectra of MA2CdX4 yield broad peaks in the 375-955 nm range with full width at half-maximum values up to 208 nm. These PL peaks are tentatively assigned to self-trapped excitons in MA2CdX4 following the crystal and electronic structure considerations. The bands around the Fermi level have small dispersions, which is indicative of high charge localization with significant exciton binding energies in MA2CdX4. On the basis of our combined experimental and computational results, MA2CdX4 and related compounds may be of interest for white-light-emitting phosphors and scintillator applications.
RESUMO
Perovskite photovoltaics have been shown to recover, or heal, after radiation damage. Here, we deconvolve the effects of radiation based on different energy loss mechanisms from incident protons which induce defects or can promote efficiency recovery. We design a dual dose experiment first exposing devices to low-energy protons efficient in creating atomic displacements. Devices are then irradiated with high-energy protons that interact differently. Correlated with modeling, high-energy protons (with increased ionizing energy loss component) effectively anneal the initial radiation damage, and recover the device efficiency, thus directly detailing the different interactions of irradiation. We relate these differences to the energy loss (ionization or non-ionization) using simulation. Dual dose experiments provide insight into understanding the radiation response of perovskite solar cells and highlight that radiation-matter interactions in soft lattice materials are distinct from conventional semiconductors. These results present electronic ionization as a unique handle to remedying defects and trap states in perovskites.
RESUMO
The photovoltaic parameters of triple cation perovskite [Cs0.05FA0.79MA0.16Pb(I0.83Br0.17)3] solar cells are investigated focusing on the electro-optical properties and differences in performance at low and high temperatures. The signature of a parasitic barrier to carrier extraction is observed at low temperatures, which results in a loss of performance at T < 200 K. Intensity-dependent measurements indicate extraction across this parasitic interface is limited by a combination of the exciton binding energy and thermionic emission. However, the photovoltaic performance of the device is recovered at low intensityâwhere the photocarrier generation rate threshold is lower than the thermionic extraction rate. Loss of solar cell performance is also observed to be strongly correlated to an increase in photoluminescence intensity, indicating inhibited carrier extraction results in strong radiative recombination and that these systems do not appear to be limited by significant thermally activated non-radiative processes. Evidence of limited carrier extraction due to excitonic effects is also observed with a strong anti-correlation in photoluminescence and carrier extraction observed at lower temperatures.
RESUMO
A type-II InAs/AlAs[Formula: see text]Sb[Formula: see text] multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state for an excess-photon energy of [Formula: see text] meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a nearly-direct band gap ([Formula: see text]) density of states with an Urbach tail below [Formula: see text]. As temperature increases, the long-lived decay times increase [Formula: see text], due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers [Formula: see text]. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.
RESUMO
Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II quantum well structure. In such systems it is shown that the dominant hot carrier thermalization process is limited by the radiative recombination lifetime of electrons with reduced wavefunction overlap with holes. It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system. This lengthens the time scale for thermalization to nanoseconds and results in a hot electron distribution with a temperature of 490 K for a quantum well structure under steady-state illumination at room temperature.