SWIR imaging using PbS QD photodiode array sensors.

We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10-3 A/W and 1.20 × 10-2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

Interplay of sidewall damage and light extraction efficiency of micro-LEDs.

This Letter describes the impact of shape on micro light-emitting diodes (µLEDs), analyzing 400 µm2 area µLEDs with various mesa shapes (circular, square, and stripes). Appropriate external quantum efficiency (EQE) can yield internal quantum efficiency (IQE) which decreases with increasing peripheral length of the mesas. However, light extraction efficiency (ηe) increased with increasing mesa periphery. We introduce analysis of Jpeak (the current at peak EQE) since it is proportional to the non-radiative recombination. Etching the sidewalls using tetramethylammonium hydroxide (TMAH) increased the peak EQE and decreased the sidewall dependency of Jpeak. Quantitatively, the TMAH etching reduced non-radiative surface recombination by a factor of four. Hence, shrinking µLEDs needs an understanding of the relationship between non-radiative recombination and ηe, where analyzing Jpeak can offer new insights.

Self-catalytic-grown SnO x nanocones for light outcoupling enhancement in organic light-emitting diodes.

Light extraction in organic light-emitting diodes (OLEDs) was improved by applying SnO x nanocones grown via thermal annealing in a low-O2 atmosphere. SnO x was easily fabricated through thermal processing after Sn deposition. The diameter of the SnO x nanocones was controlled by changing the deposition thickness of Sn. The SnO x nanocones induced strong Mie scattering, which reduced the total internal reflection in the glass substrate. Consequently, the OLED with SnO x nanocones exhibited a 23% increase in the external quantum efficiency compared with a reference device.

An Optically Flat Conductive Outcoupler Using Core/Shell Ag/ZnO Nanochurros.

Transparent conductive electrodes (TCEs) featuring a smooth surface are indispensable for preserving pristine electrical characteristics in optoelectronic and transparent electronic devices. For high-efficiency organic light emitting diodes (OLEDs), a high outcoupling efficiency, which is crucial, is only achieved by incorporating a wavelength-scale undulating surface into a TCE layer, but this inevitably degrades device performance. Here, an optically flat, high-conductivity TCE composed of core/shell Ag/ZnO nanochurros (NCs) is reported embedded within a resin film on a polyethylene terephthalate substrate, simultaneously serving as an efficient outcoupler and a flexible substrate. The ZnO NCs are epitaxially grown on the {100} planes of a pentagonal Ag core and the length of ZnO shells is precisely controlled by the exposure time of Xe lamp. Unlike Ag nanowires films, the Ag/ZnO NCs films markedly boost the optical tunneling of light. Green-emitting OLEDs (2.78 × 3.5 mm2 ) fabricated with the Ag/ZnO TCE exhibit an 86% higher power efficiency at 1000 cd m-2 than ones with an Sn-doped indium oxide TCE. A full-vectorial electromagnetic simulation suggests the suppression of plasmonic absorption losses within their Ag cores. These results provide a feasibility of multifunctional TCEs with synthetically controlled core/shell nanomaterials toward the development of high-efficiency LED and solar cell devices.

Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentation.

We investigated the effect of phosphor deposition methods on the correlated color temperature (CCT), luminous flux and thermal characteristics of packaged white light-emitting diodes (WLEDs) for use in mobile display products. For both the samples, the CCT decreased with increasing viewing angle. Phosphor sedimentation samples displayed much better angular color uniformity than phosphor dispersion samples. The phosphor sedimentation sample had higher luminous flux and luminous efficacy at 20 mA than the phosphor dispersion sample. The phosphor sedimentation sample displayed much better high-temperature/humidity (85 °C/85%) reliability and lower package temperatures compared with the phosphor dispersion sample.

High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer.

We demonstrated the growth of crack-free high-quality GaN-based UV vertical LEDs (VLEDs) (λ = 365 nm) on 6-inch sapphire substrates by using an ex-situ sputtered AlN nucleation layer (NL) and compared their performance with that of UV VLEDs with an in situ low temperature (LT) AlGaN NL. The X-ray diffraction (XRD) results showed that the ex-situ AlN sample contained lower densities of screw-type and edge-type threading dislocations than the in situ AlGaN NL sample. The micro-Raman results revealed that the ex-situ AlN sample was under more compressive stress than the in situ AlGaN sample. As the current was increased, the electroluminescence peaks of both of the samples blue-shifted, reached a minimum wavelength at 1000 mA, and then slightly red-shifted. Packaged VLEDs with the ex-situ AlN NL yielded 6.5% higher light output power at 500 mA than that with the in situ AlGaN NL. The maximum EQEs of the VLED with the in situ AlGaN and ex-situ AlN NLs were 43.7% and 48.2%, respectively. Based on the XRD and Raman results, the improved light output power of the ex-situ AlN sample is attributed to the lower density of TDs.

Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures.

We investigated the optical and electrical properties of red AlGaInP light-emitting diodes (LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi-quantum wells (MQWs). External quantum efficiency (EQE) decreased with decreasing chip size. The ideality factor gradually increased from 1.47 to 1.95 as the chip size decreased from 350 µm to 15 µm. This indicates that the smaller LEDs experienced larger carrier loss due to Shockley-Read-Hall nonradiative recombination at sidewall defects. S parameter, defined as ∂lnL/∂lnI, increased with decreasing chip size. Simulations and experimental results showed that smaller LEDs with 5 pairs of MQWs had over 30% higher IQE at 5 A/cm2 than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs.

Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes.

We employed a patterned current blocking layer (CBL) to enhance light output power of GaN-based light-emitting diodes (LEDs). Nanoimprint lithography (NIL) was used to form patterned CBLs (a diameter of 260 nm, a period of 600, and a height of 180 nm). LEDs (chip size: 300 × 800 µm2) fabricated with no CBL, a conventional SiO2 CBL, and a patterned SiO2 CBL, respectively, exhibited forward-bias voltages of 3.02, 3.1 and 3.1 V at an injection current of 20 mA. The LEDs without and with CBLs gave series resistances of 9.8 and 11.0 Ω, respectively. The LEDs with a patterned SiO2 CBL yielded 39.6 and 11.9% higher light output powers at 20 mA, respectively, than the LEDs with no CBL and conventional SiO2 CBL. On the basis of emission images and angular transmittance results, the patterned CBL-induced output enhancement is attributed to the enhanced light extraction and current spreading.

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes.

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 µm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 µm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Highly reliable Ti-based ohmic contact to N-polar n-type GaN for vertical-geometry light-emitting diodes by using a Ta barrier layer.

The formation of thermally stable and low resistance Ti/Al-based ohmic contacts to N-polar n-GaN for high-power vertical light-emitting diodes (VLEDs) using a Ta diffusion barrier is presented. Before annealing, both Ti/Al/Au and Ti/Ta/Al/Au contacts reveal ohmic behavior with specific contact resistances of 2.4 × 10⁻4 and 1.2 × 10⁻4 Ωcm², respectively. However, unlike the Ti/Al/Au samples that are electrically degraded with increasing annealing time at 250 °C, the Ti/Ta/Al/Au samples remain thermally stable even after annealing for 600 min. LEDs fabricated with the Ti/Ta/Al/Au contacts yield 8.3% higher output power (at 300 mA) than LEDs with the Ti/Al/Au contact. X-ray photoemission spectroscopy results show that the Ta layer serves as an efficient barrier to the indiffusion of oxygen toward the GaN. On the basis of the XPS and electrical results, the annealing dependence of the electrical characteristics of Ti/Al-based contacts are described and discussed.

Origin of size dependency in coherent-twin-propagation-mediated tensile deformation of noble metal nanowires.

Researchers have recently discovered ultrastrong and ductile behavior of Au nanowires (NWs) through long-ranged coherent-twin-propagation. An elusive but fundamentally important question arises whether the size and surface effects impact the twin propagation behavior with a decreasing diameter. In this work, we demonstrate size-dependent strength behavior of ultrastrong and ductile metallic NWs. For Au, Pd, and AuPd NWs, high ductility of about 50% is observed through coherent twin propagation, which occurs by a concurrent reorientation of the bounding surfaces from {111} to {100}. Importantly, the ductility is not reduced with an increase in strength, while the twin propagation stress dramatically increases with decreasing NW diameter from 250 to 40 nm. Furthermore, we find that the power-law exponent describing the twin propagation stress is fundamentally different from the exponent describing the size-dependence of the yield strength. Specifically, the inverse diameter-dependence of the twin propagation stress is directly attributed to surface reorientation, which can be captured by a surface energy differential model. Our work further highlights the fundamental role that surface reorientations play in enhancing the size-dependent mechanical behavior and properties of metal NWs that imply the feasibility of high efficiency mechanical energy storage devices suggested before.

Artificial Multimodal Neuron with Associative Learning Capabilities: Acquisition, Extinction, and Spontaneous Recovery.

Associative multimodal artificial intelligence (AMAI) has gained significant attention across various fields, yet its implementation poses challenges due to the burden on computing and memory resources. To address these challenges, researchers have paid increasing attention to neuromorphic devices based on novel materials and structures, which can implement classical conditioning behaviors with simplified circuitry. Herein, we introduce an artificial multimodal neuron device that shows not only the acquisition behavior but also the extinction and the spontaneous recovery behaviors for the first time. Being composed of an ovonic threshold switch (OTS)-based neuron device, a conductive bridge memristor (CBM)-based synapse device, and a few passive electrical elements, such observed behaviors of this neuron device are explained in terms of the electroforming and the diffusion of metallic ions in the CBM. We believe that the proposed associative learning neuron device will shed light on the way of developing large-scale AMAI systems by providing inspiration to devise an associative learning network with improved energy efficiency.

Extrinsic hydrophobicity-controlled silver nanoparticles as efficient and stable catalysts for CO2 electrolysis.

To realize economically feasible electrochemical CO2 conversion, achieving a high partial current density for value-added products is particularly vital. However, acceleration of the hydrogen evolution reaction due to cathode flooding in a high-current-density region makes this challenging. Herein, we find that partially ligand-derived Ag nanoparticles (Ag-NPs) could prevent electrolyte flooding while maintaining catalytic activity for CO2 electroreduction. This results in a high Faradaic efficiency for CO (>90%) and high partial current density (298.39 mA cm‒2), even under harsh stability test conditions (3.4 V). The suppressed splitting/detachment of Ag particles, due to the lipid ligand, enhance the uniform hydrophobicity retention of the Ag-NP electrode at high cathodic overpotentials and prevent flooding and current fluctuations. The mass transfer of gaseous CO2 is maintained in the catalytic region of several hundred nanometers, with the smooth formation of a triple phase boundary, which facilitate the occurrence of CO2RR instead of HER. We analyze catalyst degradation and cathode flooding during CO2 electrolysis through identical-location transmission electron microscopy and operando synchrotron-based X-ray computed tomography. This study develops an efficient strategy for designing active and durable electrocatalysts for CO2 electrolysis.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.

Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching.

We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.

In situ heating transmission electron microscopy observation of nanoeutectic lamellar structure in Sn-Ag-Cu alloy on Au under-bump metallization.

We investigated the microstructural evolution of Sn(96.4)Ag(2.8)Cu(0.8) solder through in situ heating transmission electron microscopy observations. As-soldered bump consisted of seven layers, containing the nanoeutectic lamella structure of AuSn and Au5Sn phases, and the polygonal grains of AuSn2 and AuSn4, on Au-plated Cu bond pads. Here, we found that there are two nanoeutectic lamellar layers with lamella spacing of 40 and 250 nm. By in situ heating above 140°C, the nanoeutectic lamella of AuSn and Au5Sn was decomposed with structural degradation by sphering and coarsening processes of the lamellar interface. At the third layer neighboring to the lamella layer, on the other hand, Au5Sn particles with a zig-zag shape in AuSn matrix became spherical and were finally dissipated in order to minimize the interface energy between two phases. In the other layers except both lamella layers, polycrystal grains of AuSn2 and AuSn4 grew by normal grain growth during in situ heating. The high interface energy of nanoeutectic lamella and polygonal nanograins, which are formed by rapid solidification, acted as a principal driving force on the microstructural change during the in situ heating.

Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure.

Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W-1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm-2 under illumination at 905 nm.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through Ag reflectors combined with a Zn middle layer. It is shown that the Zn middle layer (5 nm thick) suppresses the agglomeration of Ag reflectors by forming ZnO and dissolving into Ag. The Ag/Zn/Ag contacts show a specific contact resistance of 6.2 × 10(-5) Ωcm(2) and reflectance of ~83% at a wavelength of 440 nm when annealed at 500 °C, which are much better than those of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Zn/Ag reflectors show a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Zn/Ag contacts exhibit 34% higher output power (at 20 mA) than LEDs with the annealed Ag only contacts.

Fiber-optic waveguide coupled surface plasmon resonance sensor.

A novel approach to give an excellent tunability and self-referencing capability was presented by applying a concept of waveguide coupled surface plasmon resonance mode to a fiber-optic sensor. The presence of dielectric waveguide sandwiched between two metal layers made it possible to precisely tune the resonance wavelength in a broad range from visible to infrared region and to generate multiple modes which may be selectively used for suitable applications. Our approach also verified the potential capability of self-referencing based on a remarkable difference in sensitivity between the plasmonic and waveguide modes excited by p- and s-polarized lights, respectively, without using an additional reference channel. Experimental measurement carried out on sucrose solutions with varying concentration demonstrated the feasibility of our approach.

Effects of Pt junction on electrical transport of individual ZnO nanorod device fabricated by focused ion beam.

The electrical transport of individual ZnO nanorod devices manufactured by focused ion beam (FIB) was investigated by the direct measurement of electrical resistance at electrode junctions of cross-sectioned devices using two nanoprobes. The cathodoluminescence (CL) measurements were also performed to evaluate the crystallinity at the center and edge of the cross-sectioned ZnO nanorods. The electrical transport of the individual ZnO nanorod device depends strongly on the crystallinity of the ZnO nanorod itself and the carbon contents at Pt junctions. The ZnO-Au junction of the device acted as the fastest path for electrical transport.