Giant visible and infrared light attenuation effect in nanostructured narrow-bandgap glasses.

A unique effect of Bi on the optical and electrical properties of mixed Ga-containing Ge-Se and Ge-Te glasses is discovered. It is shown that glass with a low Bi content is completely transparent in a 3-16 µm spectral range, while the glass with a slightly higher Bi content possesses a large (>10 db/mm) attenuation coefficient, making a ∼millimeter thick glass sample fully opaque to VIS-IR radiation. Despite this contrast, both types of glass are found to retain their semiconducting properties, the DC conductivity at room temperature, σDC∼10-3 S/m, being comparable to that of silicon.

Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS.

Effect of Ga addition on the structure of vitreous As2Se3 is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The "8-N" rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to "8-N" rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga2Se3 crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga-As and Se-Se bonds in the samples with higher Ga content is supported by present studies.

Nanoscale Inhomogeneities Mapping in Ga-Modified Arsenic Selenide Glasses.

Nanoscale inhomogeneities mapping in Ga-modified As2Se3 glass was utilized exploring possibilities of nanoindentation technique using a Berkovitch-type diamond tip. Structural inhomogeneities were detected in Gax(As0.40Se0.60)100-x alloys with more than 3 at.% of Ga. The appeared Ga2Se3 nanocrystallites were visualized in Ga-modified arsenic selenide glasses using scanning and transmission electron microscopy. The Ga additions are shown to increase nanohardness and Young's modulus, this effect attaining an obvious bifurcation trend in crystallization-decomposed Ga5(As0.40Se0.60)95 alloy.

Free-Volume Nanostructurization in Ga-Modified As2Se3 Glass.

Different stages of intrinsic nanostructurization related to evolution of free-volume voids, including phase separation, crystalline nuclei precipitation, and growth, were studied in glassy As2Se3 doped with Ga up to 5 at. %, using complementary techniques of positron annihilation lifetime spectroscopy, X-ray powder diffraction, and scanning electron microscopy with energy-dispersive X-ray analysis. Positron lifetime spectra reconstructed in terms of a two-state trapping model testified in favor of a native void structure of g-As2Se3 modified by Ga additions. Under small Ga content (below 3 at. %), the positron trapping in glassy alloys was dominated by voids associated with bond-free solid angles of bridging As2Se4/2 units. This void agglomeration trend was changed on fragmentation with further Ga doping due to crystalline Ga2Se3 nuclei precipitation and growth, these changes being activated by employing free volume from just attached As-rich glassy matrix with higher content of As2Se4/2 clusters. Respectively, the positron trapping on free-volume voids related to pyramidal AsSe3/2 units (like in parent As2Se3 glass) was in obvious preference in such glassy crystalline alloys.