Interplay between structural changes, surface states and quantum confinement effects in semiconducting Mg2Si and Ca2Si thin films.

Ab initio techniques have been used to investigate structural changes in semiconducting Mg2Si and Ca2Si thin films (from 17 nm down to 0.2 nm corresponding to the 2D structure) along with band-gap variations due to quantum confinement. Cubic Mg2Si(111) thin films being dynamically stable at thicknesses (d) larger than 0.3 nm displayed an indirect band gap, the reduction of which with increasing d could be reasonably well described by the simple effective mass approximation. Only 2D Mg2Si has a unique structure because of the orthorhombic distortion and the direct band gap. Since the surface energy of cubic Ca2Si(111) films was lower with respect to any surface of the orthorhombic phase, which is the ground state for the Ca2Si bulk, the metastable in-bulk cubic phase in the form of thin films turned out to be preferable in total energy than any orthorhombic Ca2Si thin film for d < 3 nm. Sizable structural distortion and the appearance of surface states in the gap region of Ca2Si thin films with d < 3 nm could be the reason for an odd dependence of the band-gap variation on d.

Effects of bipolarons on oxidation states, and the electronic and optical properties of W18O49.

W18O49 has been studied by means of ab initio techniques in the framework of the density functional theory using the onsite Hubbard-U correction applied to the W-d states as well as using the hybrid potential. The existence of bipolarons is found to be an intrinsic feature of this oxide resulting in the presence of different oxidation states of W atoms (W6+ and W5+) and in the co-existence of localized and delocalized electrons. We also discuss possible switching from the W6+ to W5+ and from the W5+ to W4+ oxidation states in the presence of an O vacancy. It appears that O vacancy formation does not cause any additional charge localization at W sites but solely contributes to delocalized electrons. The calculated absorption and reflection coefficients manifest a transparency window in the visible region. At the same time, sizable absorption, occurring due to the presence of free carriers, is detected in the far and mid infrared regions. Additionally, in the near infrared region we confirm and explain an experimentally observed shielding effect originating from transitions involving the localized bipolaronic states.

Origin of photocatalytic activity enhancement in Pd/Pt-deposited anatase N-TiO2- experimental insights and DFT study of the (001) surface.

In pursuit of the ideal photocatalyst, cheap and stable semiconductor TiO2 is considered to be a good choice if one is able to reduce its band gap and decrease the recombination rate of charge carriers. The approach that offers such improvements for energy conversion applications is the modification of TiO2 with nitrogen and noble metals. However, the origin of these improvements and possibilities for further design of single-atom catalysts are not always straightforward. To shed light on the atomic-scale picture, we modeled the nitrogen-doped (001) anatase TiO2 surface as a support for palladium and platinum single-atom deposition. The thermodynamics of various synthesis routes for Pd/Pt deposition and nitrogen doping is considered based on density functional theory (DFT)-calculated energies, highlighting the effect of nitrogen doping on metal dimer formation and metal-support interaction. XPS analysis of the valence band of the modified TiO2 nanocrystals, and the calculated charge transfer and electronic structure of single-atom catalysts supported on the (001) anatase TiO2 surface provide an insight into modifications occurring in the valence zone of TiO2 due to nitrogen doping and Pd/Pt deposition at the surface. DFT results also show that substitutional nitrogen doping significantly increases metal-support interaction, while interstitial nitrogen doping promotes only Pt-support interaction.

Structural and electronic properties of V2O5 and their tuning by doping with 3d elements - modelling using the DFT+U method and dispersion correction.

New electrode materials for alkaline-ion batteries are a timely topic. Among many promising candidates, V2O5 is one of the most interesting cathode materials. While having very high theoretical capacity, in practice, its performance is hindered by its low stability and poor conductivity. As regards the theoretical descriptions of V2O5, common DFT-GGA calculations fail to reproduce both the electronic and crystal structures. While the band gap is underestimated, the interlayer spacing is overestimated as weak dispersion interactions are not properly described within GGA. Here we show that the combination of the DFT+U method and semi-empirical D2 correction can compensate for the drawbacks of the GGA when it comes to the modelling of V2O5. When compared to common PBE calculations, with a modest increase in the computational cost, PBE+U+D2 fully reproduced the experimental band gap of V2O5, while the errors in the lattice parameters are only a few percent. Using the proposed PBE+U+D2 methodology we studied the doping of V2O5 with 3d elements (from Sc to Zn). We show that both the structural and electronic parameters are affected by doping. Most importantly, a significant increase in conductivity is expected upon doping, which is of great importance for the application of V2O5 in metal-ion batteries.

Charge redistribution mechanisms of ceria reduction.

Charge redistribution at low oxygen vacancy concentrations in ceria have been studied in the framework of the density functional theory. We propose a model to approach the dilute limit using the results of supercell calculations. It allows one to reproduce the characteristic experimentally observed behavior of composition versus oxygen pressure dependency. We show that in the dilute limit the charge redistribution is likely to be driven by a mechanism different from the one involving electron localization on cerium atoms. We demonstrate that it can involve charge localization on light element impurities.

Multi-polaron solutions, nonlocal effects and internal modes in a nonlinear chain.

Multipolaron solutions were studied in the framework of the Holstein one-dimensional molecular crystal model. The study was performed in the continuous limit where the crystal model maps into the nonlinear Schrödinger equation for which a new periodic dnoidal solution was found for the multipolaron system. In addition, the stability of the multi-polaron solutions was examined, and it was found that cnoidal and dnoidal solutions stabilize in different ranges of the parameter space. Moreover, the model was studied under the influence of nonlocal effects and the polaronic dynamics was described in terms of internal solitonic modes.

Electron transport in stretched monoatomic gold wires.

The conductance of monoatomic gold wires containing 3-7 gold atoms has been obtained from ab initio calculations. The transmission is found to vary significantly depending on the wire stretching and the number of incorporated atoms. Such oscillations are determined by the electronic structure of the one-dimensional (1D) part of the wire between the contacts. Our results indicate that the conductivity of 1D wires can be suppressed without breaking the contact.

Shock wave propagation in dissociating low-Z liquids: D2.

We present direct molecular dynamics simulations of shock wave propagation in liquid deuterium for a wide range of impact velocities. The calculated Hugoniot is in perfect agreement with the gas-gun data as well as with the most recent experimental data. At high impact velocities we observe a smearing of the shock wave front and propagation of fast dissociated molecules well ahead of the compressed region. This smearing occurs due to the fast deuterium dissociation at the shock wave front. The experimental results are discussed in view of this effect.

High-pressure melting of MgSiO3.

The melting curve of MgSiO(3) perovskite has been determined by means of ab initio molecular dynamics complemented by effective pair potentials, and a new phenomenological model of melting. Using first principles ground state calculations, we find that the MgSiO(3) perovskite phase transforms into post perovskite at pressures above 100 GPa, in agreement with recent theoretical and experimental studies. We find that the melting curve of MgSiO(3), being very steep at pressures below 60 GPa, rapidly flattens on increasing pressure. The experimental controversy on the melting of the MgSiO(3) perovskite at high pressures is resolved, confirming the data by Zerr and Boehler.

Quantum origin of the oxygen storage capability of ceria.

The microscopic mechanism behind the extraordinary ability of ceria to store, release, and transport oxygen is explained on the basis of first-principles quantum mechanical simulations. The oxygen-vacancy formation energy in ceria is calculated for different local environments. The reversible CeO2-Ce2O3 reduction transition associated with oxygen-vacancy formation and migration is shown to be directly coupled with the quantum process of electron localization.