Transparent Conductive Electrodes of ß-Ga2O3/Ag/ß-Ga2O3 Multilayer for Ultraviolet Emitters.

We investigated the optical and electrical properties of a ß-Ga2O3/Ag/ß-Ga2O3 multilayer transparent conductive electrode deposited on an α-Al2O3 (0001) substrate. For the deposition of a continuous Ag layer, we preliminarily performed anultraviolet-ozone pretreatment of the Ga2O3 bottom layer. To obtain a stable ß-phase of Ga2O3, the ß-Ga2O3/Ag/ß-Ga2O3 multilayer was annealed at 700 °C under N2 atmosphere. The transmittance and sheet resistance of the ß-Ga2O3/Ag/ß-Ga2O3 multilayer were critically affected by the surface morphology and thickness of the Ag interlayer. The multilayer with optimized thicknesses (ß-Ga2O3 top layer: 30 nm; Ag interlayer: 12 nm; ß-Ga2O3 bottom layer: 60 nm) exhibited a resistance of 8.48 Ωsq-1, an average optical transmittance of 87.16% in the ultraviolet wavelength range from 300 to 350 nm, and a figure of merit of 29.81 × 10-3 Ω-1.

Totally implantable enzymatic biofuel cell and brain stimulator operating in bird through wireless communication.

Animals digest food to fuel brain neurometabolism via cellular respiration. This study demonstrates the combination of a biofuel cell (BFC) and an animal brain stimulator (ABS) implanted in a pigeon. Glucose oxidation and oxygen reduction in an enzymatic BFC supplied electrical power to the ABS. Power from the BFC reached 0.12 mW in vitro and 0.08 mW in vivo using only the natural glucose and oxygen in the pigeon's body. A power management integrated circuit is used to harvest energy from the in vivo BFC at a rate of 28.4 mJ over 10 min, which is sufficient for intermittent neurostimulation.

Sheet Resistance Analysis of Interface-Engineered Multilayer Graphene: Mobility Versus Sheet Carrier Concentration.

Both interlayer-undoped and interlayer-doped multilayer graphenes were prepared by the multiple transfers of graphene layers with multiple Cu etching (either dopant-free or doped during etching) and transfer, and the effect of interface properties on the electrical properties of multilayer graphene was investigated by varying the number of layers from 1 to 12. In both the cases, the sheet resistance decreased with increasing number of layers from 700 to 104 Ω/sq for the interlayer-undoped graphene and from 280 to 25 Ω/sq for the interlayer-doped graphene. Further, Hall measurements revealed that the origins of the sheet resistance reduction in the two cases are different. In the interlayer-undoped graphene, the sheet resistance decreased because of the increase in mobility with the addition of inner layers, which has a low carrier density and a high carrier mobility. On the other hand, it decreased because of the increase in sheet carrier density in the interlayer-doped multilayer graphene. The mobility and carrier density variations in both the cases were confirmed by fitting with the model of Hall effect in the heterojunction. In addition, we found that surface property modification by the doping of the top layer and the formation of double-layer graphene with different partial coverages allow the separate control of carrier density and mobility. Our study provides an effective approach for controlling the properties of multilayer graphene for electronic applications.

Improved DFT Potential Energy Surfaces via Improved Densities.

Density-corrected DFT is a method that cures several failures of self-consistent semilocal DFT calculations by using a more accurate density instead. A novel procedure employs the Hartree-Fock density to bonds that are more severely stretched than ever before. This substantially increases the range of accurate potential energy surfaces obtainable from semilocal DFT for many heteronuclear molecules. We show that this works for both neutral and charged molecules. We explain why and explore more difficult cases, for example, CH(+), where density-corrected DFT results are even better than sophisticated methods like CCSD. We give a simple criterion for when DC-DFT should be more accurate than self-consistent DFT that can be applied for most cases.

Active control of all-fibre graphene devices with electrical gating.

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light-matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene-light interaction.