Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.

Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 µA/W at a wavelength of 2 µm, 48.2 µA/W at 3 µm, and 1.75 µA/W at 6 µm. The corresponding detectivities at 2 and 3 µm are 1.17 × 108 cm Hz1/2 W-1 and 2.41 × 107 cm Hz1/2 W-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

Ultra-thin Ag/Si heterojunction hot-carrier photovoltaic conversion Schottky devices for harvesting solar energy at wavelength above 1.1 µm.

Traditional silicon solar cells can only absorb the solar spectrum at wavelengths below 1.1 µm. Here we proposed a breakthrough in harvesting solar energy below Si bandgap through conversion of hot carriers generated in the metal into a current using an energy barrier at the metal-semiconductor junction. Under appropriate conditions, the photo-excited hot carriers can quickly pass through the energy barrier and lead to photocurrent, maximizing the use of excitation energy and reducing waste heat consumption. Compared with conventional silicon solar cells, hot-carrier photovoltaic conversion Schottky device has better absorption and conversion efficiency for an infrared regime above 1.1 µm, expands the absorption wavelength range of silicon-based solar cells, makes more effective use of the entire solar spectrum, and further improves the photovoltaic performance of metal-silicon interface components by controlling the evaporation rate, deposition thickness, and annealing temperature of the metal layer. Finally, the conversion efficiency 3.316% is achieved under the infrared regime with a wavelength of more than 1100 nm and an irradiance of 13.85 mW/cm2.

Mid-Infrared Response from Cr/n-Si Schottky Junction with an Ultra-Thin Cr Metal.

Infrared detection technology has been widely applied in many areas. Unlike internal photoemission and the photoelectric mechanism, which are limited by the interface barrier height and material bandgap, the research of the hot carrier effect from nanometer thickness of metal could surpass the capability of silicon-based Schottky devices to detect mid-infrared and even far-infrared. In this work, we investigate the effects of physical characteristics of Cr nanometal surfaces and metal/silicon interfaces on hot carrier optical detection. Based on the results of scanning electron microscopy, atomic force microscopy, and X-ray diffraction analysis, the hot carrier effect and the variation of optical response intensity are found to depend highly on the physical properties of metal surfaces, such as surface coverage, metal thickness, and internal stress. Since the contact layer formed by Cr and Si is the main role of infrared light detection in the experiment, the higher the metal coverage, the higher the optical response. Additionally, a thicker metal surface makes the hot carriers take a longer time to convert into current signals after generation, leading to signal degradation due to the short lifetime of the hot carriers. Furthermore, the film with the best hot carrier effect induced in the Cr/Si structure is able to detect an infrared signal up to 4.2 µm. Additionally, it has a 229 times improvement in the signal-to-noise ratio (SNR) for a single band compared with ones with less favorable conditions.