RESUMO
We have measured plasmon energies in Na under high pressure up to 43 GPa using inelastic x-ray scattering (IXS). The momentum-resolved results show clear deviations, growing with increasing pressure, from the predictions for a nearly free-electron metal. Plasmon energy calculations based on first-principles electronic band structures and a quasiclassical plasmon model allow us to identify a pressure-induced increase in the electron-ion interaction and associated changes in the electronic band structure as the origin of these deviations, rather than effects of exchange and correlation. Additional IXS results obtained for K and Rb are addressed briefly.
RESUMO
We discovered that under pressure SnO with α-PbO structure, the same structure as in many Fe-based superconductors, e.g., ß-FeSe, undergoes a transition to a superconducting state for pâ³6 GPa with a maximum Tc of 1.4 K at p=9.3 GPa. The pressure dependence of Tc reveals a domelike shape and superconductivity disappears for pâ³16 GPa. It is further shown from band structure calculations that SnO under pressure exhibits a Fermi surface topology similar to that reported for some Fe-based superconductors and that the nesting between the hole and electron pockets correlates with the change of Tc as a function of pressure.
RESUMO
The crystal structure of YTiO(3) at high pressures up to 30 GPa has been investigated by means of synchrotron x-ray powder diffraction (T = 295 K). The variation of the Ti-O bond lengths with pressure evidences a distinct change in the distortion of the TiO(6) octahedra at around 10 GPa, which is discussed in terms of a pressure-driven spatial reorientation of the occupied Ti 3d(t(2g)) orbitals. Mid-infrared synchrotron microspectroscopy has been used to determine quantitatively the pressure-induced reduction of the optical bandgap of YTiO(3), and the results are interpreted on the basis of the structural and possible orbital orientation changes.
RESUMO
We present a method to perform electrical measurements of epitaxial films and heterostructures a few nanometers thick under high hydrostatic pressures in a diamond anvil cell (DAC). Hydrostatic pressure offers the possibility to tune the rich landscape of properties shown by epitaxial heterostructures, systems in which the combination of different materials, performed with atomic precision, can give rise to properties not present in their individual constituents. Measuring electrical conductivity under hydrostatic pressure in these systems requires a robust method that can address all the challenges: the preparation of the sample with side length and thickness that fits in the DAC setup, a contacting method compatible with liquid media, a gasket insulation that resists high forces, as well as an accurate procedure to place the sample in the pressure chamber. We prove the robustness of the method described by measuring the resistance of a two dimensional electron system buried at the interface between two insulating oxides under hydrostatic conditions up to â¼5 GPa. The setup remains intact until â¼10 GPa, where large pressure gradients affect the two dimensional conductivity.
RESUMO
A high-pressure technique for x-ray diffraction studies at low temperatures is described. The system consists of a Bridgman anvil type high-pressure device with either tungsten carbide or boron carbide anvils, a liquid He cryostat, and x-ray diffractometer operating in Debye-Scherrer geometry. The newly developed boron carbide anvil cell is capable of containing a liquid pressure transmitting medium. The precision of the lattice parameter determination is discussed and the effect of nonisostatic stress components on the diffraction pattern is examined.