Equimolar As4S4/Fe3O4 Nanocomposites Fabricated by Dry and Wet Mechanochemistry: Some Insights on the Magnetic-Fluorescent Functionalization of an Old Drug.

Multifunctional nanocomposites from an equimolar As4S4/Fe3O4 cut section have been successfully fabricated from coarse-grained bulky counterparts, employing two-step mechanochemical processing in a high-energy mill operational in dry- and wet-milling modes (in an aqueous solution of Poloxamer 407 acting as a surfactant). As was inferred from the X-ray diffraction analysis, these surfactant-free and surfactant-capped nanocomposites are ß-As4S4-bearing nanocrystalline-amorphous substances supplemented by an iso-compositional amorphous phase (a-AsS), both principal constituents (monoclinic ß-As4S4 and cubic Fe3O4) being core-shell structured and enriched after wet milling by contamination products (such as nanocrystalline-amorphous zirconia), suppressing their nanocrystalline behavior. The fluorescence and magnetic properties of these nanocomposites are intricate, being tuned by the sizes of the nanoparticles and their interfaces, dependent on storage after nanocomposite fabrication. A specific core-shell arrangement consisted of inner and outer shell interfaces around quantum-confined nm-sized ß-As4S4 crystallites hosting a-AsS, and the capping agent is responsible for the blue-cyan fluorescence in as-fabricated Poloxamer capped nanocomposites peaking at ~417 nm and ~442 nm, while fluorescence quenching in one-year-aged nanocomposites is explained in terms of their destroyed core-shell architectures. The magnetic co-functionalization of these nanocomposites is defined by size-extended heterogeneous shells around homogeneous nanocrystalline Fe3O4 cores, composed by an admixture of amorphous phase (a-AsS), nanocrystalline-amorphous zirconia as products of contamination in the wet-milling mode, and surfactant.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.

The formation and diffusion of point defects have a detrimental impact on the functionality of devices in which a high quality AlN/GaN heterointerface is required. The present paper demonstrated the heights of the migration energy barriers of native point defects throughout the AlN/GaN heterointerface, as well as the corresponding profiles of energy bands calculated by means of density functional theory. Both neutral and charged nitrogen, gallium, and aluminium vacancies were studied, as well as their complexes with a substitutional III-group element. Three diffusion mechanisms, that is, the vacancy mediated, direct interstitial, and indirect ones, in bulk AlN and GaN crystals, as well at the AlN/GaN heterointerface, were taken into account. We showed that metal vacancies migrated across the AlN/GaN interface, overcoming a lower potential barrier than that of the nitrogen vacancy. Additionally, we demonstrated the effect of the inversion of the electric field in the presence of charged point defects VGa3- and VAl3- at the AlN/GaN heterointerface, not reported so far. Our findings contributed to the issues of structure design, quality control, and improvement of the interfacial abruptness of the AlN/GaN heterostructures.

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.

Integration of diamond with GaN-based high-electron-mobility transistors improves thermal management, influencing the reliability, performance, and lifetime of GaN-based devices. The current GaN-on-diamond integration technology requires precise interface engineering and appropriate interfacial layers. In this respect, we performed first principles calculation on the stability of diamond-GaN interfaces in the framework of density functional theory. Initially, some stable adsorption sites of C atoms were found on the Ga- and N-terminated surfaces that enabled the creation of a flat carbon monolayer. Following this, a model of diamond-GaN heterojunction with the growth direction [111] was constructed based on carbon adsorption results on GaN{0001} surfaces. Finally, we demonstrate the ways of improving the energetic stability of diamond-GaN interfaces by means of certain reconstructions induced by substitutional dopants present in the topmost GaN substrate's layer.