Pseudospin-selective Floquet band engineering in black phosphorus.

Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials1-3, cold atoms4 and photonic systems5 through hybridization with photon-dressed Floquet states6 in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials7-11, for example, modifications of the topological properties of Dirac materials12,13 and modulation of the optical response14-16. Despite extensive research interests over the past decade3,8,17-20, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340-440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.

Ultrafast Carrier Relaxation Dynamics in a Nodal-Line Semimetal PtSn4.

Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn4, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn4 via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal.

Chirality-Dependent Dynamic Evolution for Trions in Monolayer WS2.

Monolayer transition metal dichalcogenides exhibit valley-dependent excitonic characters with a large binding energy, acting as the building block for future optoelectronic functionalities. Herein, combined with pump-probe ultrafast transient transmission spectroscopy and theoretical simulations, we reveal the chirality-dependent trion dynamics in h-BN encapsulated monolayer tungsten disulfide. By resonantly pumping trions in a single valley and monitoring their temporal evolution, we identify the temperature-dependent competition between two relaxation channels driven by chirality-dependent scattering processes. At room temperature, the phonon-assisted upconversion process predominates, converting excited trions to excitons within the same valley on a sub-picosecond (ps) time scale. As temperature decreases, this process becomes less efficient, while alternative channels, notably valley depolarization process for trions, assume importance, leading to an increase of trion density in the unpumped valley within a ps time scale. Our time-resolved valley-contrast results provide a comprehensive insight into trion dynamics in 2D materials, thereby advancing the development of novel valleytronic devices.

Hidden Charge Order and Multiple Electronic Instabilities in EuTe4.

The rare-earth telluride compound EuTe4 exhibits a charge density wave (CDW) and an unconventional thermal hysteresis transition. Herein, we report a comprehensive study of the CDW states in EuTe4 by using low-temperature scanning tunneling microscopy. Two types of charge orders are observed at 4 K, including a newly discovered spindle-shaped pattern and a typical stripe-like pattern. As an exotic charge order, the spindle-shaped CDW is off-axis and barely visible at 77 K, indicating that it is a hidden order developed at low temperature. Based on our first-principles calculations, we reveal the origins of the observed electronic instabilities. The spindle-shaped charge order stems from a subsequent transition based on the stripe-like CDW phase. Our work demonstrates that the competition and cooperation between multiple charge orders can generate exotic quantum phases.

Light-Induced Ideal Weyl Semimetal in HgTe via Nonlinear Phononics.

Interactions between light and matter allow the realization of out-of-equilibrium states in quantum solids. In particular, nonlinear phononics is one of the most efficient approaches to realizing the stationary electronic state in nonequilibrium. Herein, by an extended ab initio molecular dynamics method, we identify that long-lived light-driven quasistationary geometry could stabilize the topological nature in the material family of HgTe compounds. We show that coherent excitation of the infrared-active phonon mode results in a distortion of the atomic geometry with a lifetime of several picoseconds. We show that four Weyl points are located exactly at the Fermi level in this nonequilibrium geometry, making it an ideal long-lived metastable Weyl semimetal. We propose that such a metastable topological phase can be identified by photoelectron spectroscopy of the Fermi arc surface states or ultrafast pump-probe transport measurements of the nonlinear Hall effect.

Irremovable Mn-Bi Site Mixing in MnBi2Te4.

MnBi2Te4, an antiferromagnetic topological insulator, was theoretically predicted to have a gapped surface state on its (111) surface. However, a much smaller gapped or even gapless surface state has been observed experimentally, which is thought to be caused by the defects in MnBi2Te4. Here, we have theoretically identified the antisite MnBi and BiMn as dominant defects and revealed their evolution during the phase transition from MnTe/Bi2Te3 to MnBi2Te4. We found that the complete elimination of MnBi and BiMn defects in MnBi2Te4 by simple annealing is almost impossible due to the high migration barrier in kinetics. Moreover, the gap of the Dirac point-related bands in a MnBi2Te4 monolayer would be eliminated with an increasing concentration of MnBi and BiMn defects, which could explain the experimentally unobserved large-gap surface state in MnBi2Te4. Our results provide an insight into the theoretical understanding of the quality and the experimentally measured topological properties of the synthesized MnBi2Te4.

Fast Lithium Ion Transport Pathways Constructed by Two-Dimensional Boron Nitride Nanoflakes in Quasi-Solid-State Polymer Electrolyte.

Quasi-solid-state electrolytes (QSSEs) are gaining huge popularity because of their significantly improved safety performance over nonaqueous liquid electrolytes and superior process adaptability over all-solid-state electrolytes. However, because of the existence of liquid molecules, QSSEs typically have low lithium ion transference numbers and compromised thermal stability. In this work, we present the fabrication of a well-rounded QSSE by introducing hexagonal boron nitride nanoflakes (BNNFs) as an inorganic filler in a poly(vinylene carbonate) matrix. BNNFs, in contrast to most inorganic fillers used as anion trappers, are used to build fast lithium ion transport pathways directly on their two-dimensional surfaces. We confirm the attractive coupling between lithium ions and BNNFs, and we confirm that with the help of BNNFs, lithium ions can migrate with less damping and a lower transport energy barrier. As a result, the designed electrolyte exhibits good ion transportability, promoted fire retardancy, and good compatibility with lithium metal anodes and commercial cathodes.

Robustness of Trion State in Gated Monolayer MoSe2 under Pressure.

Quasiparticles consisting of correlated electron(s) and hole(s), such as excitons and trions, play important roles in the optical phenomena of van der Waals semiconductors and serve as unique platforms for studies of many-body physics. Herein, we report a gate-tunable exciton-to-trion transition in pressurized monolayer MoSe2, in which the electronic band structures are modulated continuously within a diamond anvil cell. The emission energies of both the exciton and trion undergo large blueshifts over 90 meV with increasing pressure. Surprisingly, the trion binding energy remains constant at 30 meV, regardless of the applied pressure. Combining ab initio density functional theory calculations and quantum Monte Carlo simulations, we find that the remarkable robustness of the trion binding energy originates from the spatially diffused nature of the trion wave function and the weak correlation between its constituent electron-hole pairs. Our findings shed light on the optical properties of correlated excitonic quasiparticles in low-dimensional materials.

Unconventional excitonic states with phonon sidebands in layered silicon diphosphide.

Complex correlated states emerging from many-body interactions between quasiparticles (electrons, excitons and phonons) are at the core of condensed matter physics and material science. In low-dimensional materials, quantum confinement affects the electronic, and subsequently, optical properties for these correlated states. Here, by combining photoluminescence, optical reflection measurements and ab initio theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP2), where the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus-phosphorus chains and holes extended in two-dimensional SiP2 layers. The excitonic state and emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Our ab initio many-body calculations confirm that the observed phonon sideband results from the correlated interaction between excitons and optical phonons. With these results, we propose layered SiP2 as a platform for the study of excitonic physics and many-particle effects.

Floquet Engineering of Black Phosphorus upon Below-Gap Pumping.

Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV, which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our Letter demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials.

Evolution of Electronic Structure in Pristine and Rb-Reconstructed Surfaces of Kagome Metal RbV3Sb5.

We report on in situ low-temperature (4 K) scanning tunneling microscope measurements of atomic and electronic structures of the cleaved surfaces of an alkali-based kagome metal RbV3Sb5 single crystals. We find that the dominant pristine surface exhibits Rb-1×1 structure, in which a unique unidirectional √3a0 charge order is discovered. As the sample temperature slightly rises, Rb-√3×1 and Rb-√3×√3 reconstructions form due to desorption of surface Rb atoms. Our conductance mapping results demonstrate that Rb desorption not only gives rise to hole doping but also reconstructs the electronic band structures. Surprisingly, we find a ubiquitous gap opening near the Fermi level in tunneling spectra on all the surfaces despite their large differences of hole-carrier concentration, indicating an orbital-selective band reconstruction in RbV3Sb5. The Rb desorption induced electronic reconstructions are further confirmed by our density functional theory calculations.

Learning atoms for materials discovery.

Exciting advances have been made in artificial intelligence (AI) during recent decades. Among them, applications of machine learning (ML) and deep learning techniques brought human-competitive performances in various tasks of fields, including image recognition, speech recognition, and natural language understanding. Even in Go, the ancient game of profound complexity, the AI player has already beat human world champions convincingly with and without learning from the human. In this work, we show that our unsupervised machines (Atom2Vec) can learn the basic properties of atoms by themselves from the extensive database of known compounds and materials. These learned properties are represented in terms of high-dimensional vectors, and clustering of atoms in vector space classifies them into meaningful groups consistent with human knowledge. We use the atom vectors as basic input units for neural networks and other ML models designed and trained to predict materials properties, which demonstrate significant accuracy.

Multiple Types of Topological Fermions in Transition Metal Silicides.

Exotic massless fermionic excitations with nonzero Berry flux, other than the Dirac and Weyl fermions, could exist in condensed matter systems under the protection of crystalline symmetries, such as spin-1 excitations with threefold degeneracy and spin-3/2 Rarita-Schwinger-Weyl fermions. Herein, by using the ab initio density functional theory, we show that these unconventional quasiparticles coexist with type-I and type-II Weyl fermions in a family of transition metal silicides, including CoSi, RhSi, RhGe, and CoGe, when spin-orbit coupling is considered. Their nontrivial topology results in a series of extensive Fermi arcs connecting projections of these bulk excitations on the side surface, which is confirmed by (001) surface electronic spectra of CoSi. In addition, these stable arc states exist within a wide energy window around the Fermi level, which makes them readily accessible in angle-resolved photoemission spectroscopy measurements.

Topological Superconductivity on the Surface of Fe-Based Superconductors.

As one of the simplest systems for realizing Majorana fermions, the topological superconductor plays an important role in both condensed matter physics and quantum computations. Based on ab initio calculations and the analysis of an effective 8-band model with superconducting pairing, we demonstrate that the three-dimensional extended s-wave Fe-based superconductors such as Fe_{1+y}Se_{0.5}Te_{0.5} have a metallic topologically nontrivial band structure, and exhibit a normal-topological-normal superconductivity phase transition on the (001) surface by tuning the bulk carrier doping level. In the topological superconductivity (TSC) phase, a Majorana zero mode is trapped at the end of a magnetic vortex line. We further show that the surface TSC phase only exists up to a certain bulk pairing gap, and there is a normal-topological phase transition driven by the temperature, which has not been discussed before. These results pave an effective way to realize the TSC and Majorana fermions in a large class of superconductors.

Robust gapless surface state and Rashba-splitting bands upon surface deposition of magnetic Cr on Bi2Se3.

The interaction between magnetic impurities and the gapless surface state is of critical importance for realizing novel quantum phenomena and new functionalities in topological insulators. By combining angle-resolved photoemission spectroscopic experiments with density functional theory calculations, we show that surface deposition of Cr atoms on Bi2Se3 does not lead to gap opening of the surface state at the Dirac point, indicating the absence of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping, and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.

Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures.

The existence of a gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the nontrivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in situ angle-resolved photoemission spectroscopy and first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological nontrivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds light on designing artificial topological materials for electronic and spintronic purposes.

Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.

With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.

Topological minibands and interaction driven quantum anomalous Hall state in topological insulator based moiré heterostructures.

The presence of topological flat minibands in moiré materials provides an opportunity to explore the interplay between topology and correlation. In this work, we study moiré minibands in topological insulator films with two hybridized surface states under a moiré superlattice potential created by two-dimensional insulating materials. We show the lowest conduction (highest valence) Kramers' pair of minibands can be Z 2 non-trivial when the minima (maxima) of moiré potential approximately form a hexagonal lattice with six-fold rotation symmetry. Coulomb interaction can drive the non-trivial Kramers' minibands into the quantum anomalous Hall state when they are half-filled, which is further stabilized by applying external gate voltages to break inversion. We propose the monolayer Sb2 on top of Sb2Te3 films as a candidate based on first principles calculations. Our work demonstrates the topological insulator based moiré heterostructure as a potential platform for studying interacting topological phases.

Real-time observation of two distinctive non-thermalized hot electron dynamics at MXene/molecule interfaces.

The photoinduced non-thermalized hot electrons at an interface play a pivotal role in determining plasmonic driven chemical events. However, understanding non-thermalized electron dynamics, which precedes electron thermalization (~125 fs), remains a grand challenge. Herein, we simultaneously captured the dynamics of both molecules and non-thermalized electrons in the MXene/molecule complexes by femtosecond time-resolved spectroscopy. The real-time observation allows for distinguishing non-thermalized and thermalized electron responses. Differing from the thermalized electron/heat transfer, our results reveal two non-thermalized electron dynamical pathways: (i) the non-thermalized electrons directly transfer to attached molecules at an interface within 50 fs; (ii) the non-thermalized electrons scatter at the interface within 125 fs, inducing adsorbed molecules heating. These two distinctive pathways are dependent on the irradiating wavelength and the energy difference between MXene and adsorbed molecules. This research sheds light on the fundamental mechanism and opens opportunities in photocatalysis and interfacial heat transfer theory.