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Nanoantennas capable of large fluorescence enhancement with minimal absorption are crucial for future optical technologies from single-photon sources to biosensing. Efficient dielectric nanoantennas have been designed, however, evaluating their performance at the individual emitter level is challenging due to the complexity of combining high-resolution nanofabrication, spectroscopy and nanoscale positioning of the emitter. Here, we study the fluorescence enhancement in infinity-shaped gallium phosphide (GaP) nanoantennas based on a topologically optimized design. Using fluorescence correlation spectroscopy (FCS), we probe the nanoantennas enhancement factor and observe an average of 63-fold fluorescence brightness enhancement with a maximum of 93-fold for dye molecules in nanogaps between 20 and 50 nm. The experimentally determined fluorescence enhancement of the nanoantennas is confirmed by numerical simulations of the local density of optical states (LDOS). Furthermore, we show that beyond design optimization of dielectric nanoantennas, increased performances can be achieved via tailoring of nanoantenna fabrication.
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We have studied the nonlinear optical properties of single ß-barium borate nanocrystals, with potential applications as probes in nonlinear sensing and imaging schemes. Our work demonstrates their ability to generate second, third, fourth, and fifth harmonics. The particles' polarization response is studied and compared with simulations based on the bulk nonlinear tensors, with good agreement. Furthermore, the nonlinear susceptibilities of different orders are estimated.
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By integrating dielectric and metallic components, hybrid nanophotonic devices present promising opportunities for manipulating nanoscale light-matter interactions. Here, we investigate hybrid nanoparticle-on-mirror optical cavities, where semiconductor WS2 monolayers are positioned between gallium phosphide (GaP) nanoantennas and a gold mirror, thereby establishing extreme confinement of optical fields. Prior to integration of the mirror, we observe an intermediate coupling regime from GaP nanoantennas covered with WS2 monolayers. Upon introduction of the mirror, enhanced interactions lead to modal splitting in the exciton photoluminescence spectra, spatially localized within the dielectric-metallic gap. Using a coupled harmonic oscillator model, we extract an average Rabi splitting energy of 22.6 meV at room temperature, at the onset of the strong coupling regime. Moreover, the characteristics of polaritonic emission are revealed by the increasing Lorentzian linewidth and energy blueshift with increasing excitation power. Our findings highlight hybrid nanophotonic structures as novel platforms for controlling light-matter coupling with atomically thin materials.
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Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton annihilation (EEA) processes, setting a fundamental limit for their photonic applications. In this work, we demonstrate suppression of EEA via enhancement of light-matter interaction in hybrid 2D semiconductor-dielectric nanophotonic platforms, by coupling excitons in WS2 monolayers with optical Mie resonances in dielectric nanoantennas. The hybrid system reaches an intermediate light-matter coupling regime, with photoluminescence enhancement factors up to 102. Probing the exciton ultrafast dynamics reveal suppressed EEA for coupled excitons, even under high exciton densities >1012 cm-2. We extract EEA coefficients in the order of 10-3, compared to 10-2 for uncoupled monolayers, as well as a Purcell factor of 4.5. Our results highlight engineering the photonic environment as a route to achieve higher quantum efficiencies, for low-power hybrid devices, and larger exciton densities, towards strongly correlated excitonic phases in 2D semiconductors.
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All-dielectric optical metasurfaces with high quality (Q) factors have been hampered by the lack of simultaneously lossless and high-refractive-index materials over the full visible spectrum. In fact, the use of low-refractive-index materials is unavoidable for extending the spectral coverage due to the inverse correlation between the bandgap energy (and therefore the optical losses) and the refractive index (n). However, for Mie resonant photonics, smaller refractive indices are associated with reduced Q factors and low mode volume confinement. Here, symmetry-broken quasi bound states in the continuum (qBICs) are leveraged to efficiently suppress radiation losses from the low-index (n ≈ 2) van der Waals material hexagonal boron nitride (hBN), realizing metasurfaces with high-Q resonances over the complete visible spectrum. The rational use of low- and high-refractive-index materials as resonator components is analyzed and the insights are harnessed to experimentally demonstrate sharp qBIC resonances with Q factors above 300, spanning wavelengths between 400 and 1000 nm from a single hBN flake. Moreover, the enhanced electric near fields are utilized to demonstrate second-harmonic generation with enhancement factors above 102 . These results provide a theoretical and experimental framework for the implementation of low-refractive-index materials as photonic media for metaoptics.
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Since their experimental discovery in 2015, Weyl semimetals have generated a large amount of attention due their intriguing physical properties that arise from their linear electron dispersion relation and topological surface states. In particular, in the field of nonlinear (NL) optics and light harvesting, Weyl semimetals have shown outstanding performances and achieved record NL conversion coefficients. In this context, the first steps toward Weyl semimetal nanophotonics are performed here by thoroughly characterizing the linear and NL optical behavior of epitaxially grown niobium phosphide (NbP) thin films, covering the visible to the near-infrared regime of the electromagnetic spectrum. Despite the measured high linear absorption, third-harmonic generation studies demonstrate high conversion efficiencies up to 10-4 % that can be attributed to the topological electron states at the surface of the material. Furthermore, nondegenerate pump-probe measurements with sub-10 fs pulses reveal a maximum modulation depth of ≈1%, completely decaying within 100 fs and therefore suggesting the possibility of developing all-optical switching devices based on NbP. Altogether, this work reveals the promising NL optical properties of Weyl semimetal thin films, which outperform bulk crystals of the same material, laying the grounds for nanoscale applications, enabled by top-down nanostructuring, such as light-harvesting, on-chip frequency conversion, and all-optical processing.
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High-refractive index nanostructured dielectrics have the ability to locally enhance electromagnetic fields with low losses while presenting high third-order nonlinearities. In this work, we exploit these characteristics to achieve efficient ultrafast all-optical modulation in a crystalline gallium phosphide (GaP) nanoantenna through the optical Kerr effect (OKE) and two-photon absorption (TPA) in the visible/near-infrared range. We show that an individual GaP nanodisk can yield differential reflectivity modulations of up to ~40%, with characteristic modulation times between 14 and 66 fs, when probed at the anapole excitation (AE). Numerical simulations reveal that the AE represents a unique condition where both the OKE and TPA contribute with the same modulation sign, maximizing the response. These findings highly outperform previous reports on sub-100-fs all-optical switching from resonant nanoscale dielectrics, which have demonstrated modulation depths no larger than 0.5%, placing GaP nanoantennas as a promising choice for ultrafast all-optical modulation at the nanometer scale.
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Nanophotonics based on high refractive index dielectrics relies on appreciable contrast between the indices of designed nanostructures and their immediate surrounding, which can be achieved by the growth of thin films on low-index substrates. Here we propose the use of high index amorphous gallium phosphide (a-GaP), fabricated by radio-frequency sputter deposition, on top of a low refractive index glass substrate and thoroughly examine its nanophotonic properties. Spectral ellipsometry of the amorphous material demonstrates the optical properties to be considerably close to crystalline gallium phosphide (c-GaP), with low-loss transparency for wavelengths longer than 650 nm. When nanostructured into nanopatches, the second harmonic (SH) response of an individual a-GaP patch is characterized to be more than two orders of magnitude larger than the as-deposited unstructured film, with an anapole-like resonant behavior. Numerical simulations are in good agreement with the experimental results over a large spectral and geometrical range. Furthermore, by studying individual a-GaP nanopatches through non-degenerate pump-probe spectroscopy with sub-10 fs pulses, we find a more than 5% ultrafast modulation of the reflectivity that is accompanied by a slower decaying free carrier contribution, caused by absorption. Our investigations reveal a potential for a-GaP as an adequate inexpensive and CMOS-compatible material for nonlinear nanophotonic applications as well as for photocatalysis.