Tunable Strong Magnetic Anisotropy in Two-Dimensional van der Waals Antiferromagnets.

We show that the anisotropic energy of a 2D antiferromagnet is greatly enhanced via stacking on a magnetic substrate layer, arising from the sublattice-dependent interlayer magnetic interaction that defines an effective anisotropic energy. Interestingly, this effective energy couples strongly with the interlayer stacking order and the magnetic order of the substrate layer, providing unique mechanical and magnetic means to control the antiferromagnetic order. These two types of control methods distinctly affect the sublattice magnetization dynamics, with a change in the ratio of sublattice precession amplitudes in the former and its chirality in the latter. In moiré superlattices formed by a relative twist or strain between the layers, the coupling with stacking order introduces a landscape of effective anisotropic energy across the moiré, which can be utilized to create nonuniform antiferromagnetic textures featuring periodically localized low-energy magnons.

Morphology Deformation and Giant Electronic Band Modulation in Long-Wavelength WS2 Moiré Superlattices.

As a lattice interference effect, moiré superlattices feature a magnification effect that they respond sensitively to both the extrinsic mechanical perturbations and intrinsic atomic reconstructions. Here, using scanning tunneling microscopy and spectroscopy, we observe that long-wavelength WS2 superlattices are reconstructed into various moiré morphologies, ranging from regular hexagons to heavily deformed ones. We show that a dedicated interplay between the extrinsic nonuniform heterostrain and the intrinsic atomic reconstruction is responsible for this interesting moiré structure evolution. Importantly, the interplay between these two factors also introduces a local inhomogeneous intralayer strain within a moiré. Contrary to the commonly reported electronic modulation that occurred at the valence band edge due to interlayer hybridization, we find that this local intralayer strain induces a strong modulation at K point of the conduction band, reaching up to 300 meV in the heavily deformed moiré. Our microscopic explorations provide valuable information in understanding the intriguing physics in TMD moirés.

Spectroscopic Visualization of Flat Bands in Magic-Angle Twisted Monolayer-Bilayer Graphene: Coexistence of Localization and Delocalization.

Recent transport studies have demonstrated the great potential of twisted monolayer-bilayer graphene (TMBG) as a new platform to host moiré flat bands with a higher tunability than twisted bilayer graphene (TBG). However, a direct visualization of the flat bands in TMBG and its comparison with the ones in TBG remain unexplored. Here, via fabricating on a single sample with exactly the same twist angle of ∼1.13°, we present a direct comparative study between TMBG and TBG using scanning tunneling microscopy and spectroscopy. We observe a sharp density of states peak near the Fermi energy in tunneling spectroscopy, confirming unambiguously the existence of flat electronic bands in TMBG. The bandwidth of this flat-band peak is found to be slightly narrower than that of the TBG, validating previous theoretical predictions. Remarkably, by measuring spatially resolved spectroscopy, combined with continuum model calculation, we show that the flat-band states in TMBG exhibit a unique layer-resolved localization-delocalization coexisting feature, which offers an unprecedented possibility to utilize their cooperation on exploring novel correlation phenomena. Our work provides important microscopic insight of flat-band states for better understanding the emergent physics in graphene moiré systems.

Skyrmions in the Moiré of van der Waals 2D Magnets.

We explore the skyrmion formation and control possibilities in two-dimensional (2D) magnets from the ubiquitous moiré pattern in vdW heterostructures. Using the example of a ferromagnetic monolayer on an antiferromagnetic substrate, we demonstrate a new origin of skyrmions in the 2D magnets from the lateral modulation of interlayer magnetic coupling by the locally different atomic registries in moiré. The moiré skyrmions are doubly degenerate with opposite topological charge and trapped at an ordered array of sites with the moiré periodicity that can be dramatically tuned by strain and interlayer translation. At relatively strong interlayer coupling, the ground states are skyrmion lattices, where magnetic field can switch the skyrmion vorticity and location in the moiré. At weak interlayer coupling limit, we find metastable skyrmion excitations on the ferromagnetic ground state that can be deterministically moved between the ordered moiré trapping sites by current pulses. Our results point to potential uses of moiré skyrmions both as information carriers and as drastically tunable topological background of electron transport.

Anomalous Light Cones and Valley Optical Selection Rules of Interlayer Excitons in Twisted Heterobilayers.

We show that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have sixfold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion. The photon emissions at each light cone are elliptically polarized, with the major axis locked to the direction of exciton velocity, and helicity specified by the valley indices of the electron and the hole. These finite-velocity light cones allow unprecedented possibilities for optically injecting valley polarization and valley current, and the observation of both direct and inverse valley Hall effects, by exciting interlayer excitons. Our findings suggest potential excitonic circuits with valley functionalities, and unique opportunities to study exciton dynamics and condensation phenomena in semiconducting 2D heterostructures.

Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain.

Layer-engineered interlayer excitons from heterostructures of transition-metal dichalcogenides (TMDCs) exhibit a rich variety of emissive states and intriguing valley spin-selection rules, the effective modulation of which is crucial for excitonic physics and related device applications. Strain or high pressure provides the possibility to tune the energy of the interlayer excitons; however, the reported emission intensity is substantially quenched, which greatly limits their practical application in optoelectronic devices. Here, via applying uniaxial strain based on polyvinyl alcohol (PVA) encapsulation technique, we report enhanced layer-engineered interlayer exciton emission intensity with largely modulated emission energy in WSe2/WS2 heterobilayer and heterotrilayer. Both momentum-direct and momentum-indirect interlayer excitons were observed, and their emission energies show an opposite shift tendency upon applied strain, which agrees with our DFT calculations. We further demonstrate that intralayer and interlayer exciton states with low phonon interactions can be modulated through the mechanical strain applied to the PVA substrate at low temperatures. Due to strain-induced breaking of the 3-fold rotational symmetry, we observe the enhanced valley polarization of interlayer excitons. Our study contributes to the understanding and modulation of the optical properties of interlayer excitons, which could be exploited for optoelectronic device applications.

Correlation-Induced Symmetry-Broken States in Large-Angle Twisted Bilayer Graphene on MoS2.

Strongly correlated states commonly emerge in twisted bilayer graphene (TBG) with "magic-angle" (1.1°), where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this nonmagic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the width of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked by the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result demonstrates the feasibility of the study and application of the correlation physics in TBGs with a wider range of twist angle.

Graphene binding on black phosphorus enables high on/off ratios and mobility.

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >103 as well as a mobility of ∼8000 cm2 V-1 s-1 at room temperature, meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

Observation and Modulation of High-Temperature Moiré-Locale Excitons in van der Waals Heterobilayers.

Transition metal dichalcogenide heterobilayers feature strong moiré potentials with multiple local minima, which can spatially trap interlayer excitons at different locations within one moiré unit cell (dubbed moiré locales). However, current studies mainly focus on moiré excitons trapped at a single moiré locale. Exploring interlayer excitons trapped at different moiré locales is highly desirable for building polarized light-emitter arrays and studying multiorbital correlated and topological physics. Here, via enhancing the interlayer coupling and engineering the heterointerface, we report the observation and modulation of high-temperature interlayer excitons trapped at separate moiré locales in WS2/WSe2 heterobilayers. These moiré-locale excitons are identified by two emission peaks with an energy separation of ∼60 meV, exhibiting opposite circular polarizations due to their distinct local stacking registries. With the increase of temperature, two momentum-indirect moiré-locale excitons are observed, which show a distinct strain dependence with the momentum-direct one. The emission of these moiré-locale excitons can be controlled via engineering the heterointerface with different phonon scattering, while their emission energy can be further modulated via strain engineering. Our reported highly tunable interlayer excitons provide important information on understanding moiré excitonic physics, with possible applications in building high-temperature excitonic devices.

Room temperature near unity spin polarization in 2D Van der Waals heterostructures.

The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications.

Near-Unity Polarization of Valley-Dependent Second-Harmonic Generation in Stacked TMDC Layers and Heterostructures at Room Temperature.

With unique valley-dependent optical and optoelectronic properties, 2D transition metal dichalcogenides (2D TMDCs) are promising materials for valleytronics. Second-harmonic generation (SHG) in 2D TMDCs monolayers has shown valley-dependent optical selection rules. However, SHG in monolayer TMDCs is generally weak; it is important to obtain materials with both strong SHG signals and a large degree of polarization. In the work, a variety of inversion-symmetry-breaking (3R-like phase) TMDCs (WSe2 , WS2 , MoS2 ) atomic layers, spiral structures, and heterostructures are prepared, and their SHG polarization is studied. Through circular-polarization-resolved SHG experiments, it is demonstrated that the SHG intensity is enhanced in thicker samples by breaking inversion symmetry while maintaining the degree of polarization close to unity at room temperature. By studying TMDCs with different twist angles and the spiral structures, it is found that there is no significant effect of multilayer interlayer interaction on valley-dependent SHG. The realization of strong SHG with high degree of polarization may pave the way toward a new platform for nonlinear optical valleytronics devices based on 2D semiconductors.

Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer.

Van der Waals heterostructures of two-dimensional (2D) materials provide a powerful approach toward engineering various quantum phases of matter. Examples include topological matter such as quantum spin Hall (QSH) insulator and correlated matter such as exciton superfluid. It can be of great interest to realize these vastly different quantum phases matter on a common platform; however, their distinct origins tend to restrict them to material systems of incompatible characters. Here, we show that heterobilayers of 2D valley semiconductors can be tuned through interlayer bias between an exciton superfluid, a quantum anomalous Hall insulator, and a QSH insulator. The tunability between these distinct phases results from the competition of Coulomb interaction with the interlayer quantum tunneling that has a chiral form in valley semiconductors. Our findings point to exciting opportunities for harnessing both protected topological edge channels and bulk superfluidity in an electrically configurable platform.

Stacking symmetry governed second harmonic generation in graphene trilayers.

Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. We report a unique stacking-induced SHG in graphene trilayers, whose individual monolayer sheet is centrosymmetric. Depending on layer stacking sequence, we observe a strong optical SHG in a Bernal ABA-stacked non-centrosymmetric trilayer, while it vanishes in a rhombohedral ABC-stacked one, which preserves inversion symmetry. This highly contrasting SHG due to the distinct stacking symmetry enables us to map out the ABA and ABC crystal domains in an otherwise homogeneous graphene trilayer. The extracted second-order nonlinear susceptibility of the ABA trilayer is surprisingly large, comparable to the best known two-dimensional semiconductors enhanced by excitonic resonance. Our results reveal a novel stacking order-induced nonlinear optical effect, as well as unleash the opportunity for studying intriguing physical phenomena predicted for stacking-dependent ABA and ABC graphene trilayers.

Majorana transport in superconducting nanowire with Rashba and Dresselhaus spin-orbit couplings.

The tunneling experiment is a key technique for detecting Majorana fermion (MF) in solid state systems. We use Keldysh non-equilibrium Green function method to study two-lead tunneling in superconducting nanowire with Rashba and Dresselhaus spin-orbit couplings. A zero-bias dc conductance peak appears in our setup which signifies the existence of MF and is in accordance with previous experimental results on InSb nanowire. Interestingly, due to the exotic property of MF, there exists a hole transmission channel which makes the currents asymmetric at the left and right leads. The ac current response mediated by MF is also studied here. To discuss the impacts of Coulomb interaction and disorder on the transport property of Majorana nanowire, we use the renormalization group method to study the phase diagram of the wire. It is found that there is a topological phase transition under the interplay of superconductivity and disorder. We find that the Majorana transport is preserved in the superconducting-dominated topological phase and destroyed in the disorder-dominated non-topological insulator phase.