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1.
Opt Express ; 19 Suppl 1: A28-34, 2011 Jan 03.
Artigo em Inglês | MEDLINE | ID: mdl-21263709

RESUMO

Enhanced photoelectric conversion is demonstrated in a crystalline silicon (c-Si) solar cell with frustum nanorod arrays (FNAs), fabricated using colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the cell with FNAs improves the power conversion efficiency by nearly 30%, compared to a conventional wet-chemical-textured reference. The enhancement mostly arises from the superior antireflective properties for wavelengths between 400 nm and 1000 nm. In that spectral range, we show that photons gained by reflection reduction directly contribute to collected carriers without auxiliary losses due to nano-fabrication. Moreover, the omnidirectional antireflection of FNAs is also investigated using an angle-resolved reflectance spectroscopy. The dimensions of FNAs are further analyzed with numerical calculations based on Maxwell's equations. The optimized short-circuit current density achieves nearly 40 mA/cm2, corresponding to a 16% enhancement compared to the conventional device.

2.
Opt Express ; 19 Suppl 3: A219-24, 2011 May 09.
Artigo em Inglês | MEDLINE | ID: mdl-21643363

RESUMO

Omnidirectional and broadband light harvesting is critical to photovoltaics due to the sun's movement and its wide spectral range of radiation. In this work, we demonstrate distinctive indium-tin-oxide nanowhiskers that achieve superior angular and spectral characteristics for crystalline silicon solar cells using angle-resolved reflectance spectroscopy. The solar-spectrum weighted reflectance is well below 6% for incident angles of up to 70° and for the wavelength range between 400nm and 1000nm. As a result, the nanowhisker coated solar cell exhibits broadband quantum efficiency characteristics and enhanced short-circuit currents for large angles of incidence.

3.
Opt Express ; 19 Suppl 4: A757-62, 2011 Jul 04.
Artigo em Inglês | MEDLINE | ID: mdl-21747544

RESUMO

Light-management is critical to thin film solar cells due to their usually limited optical absorption in the active layer. Conventional approaches involve employing separate techniques for anti-reflection and light trapping. Here, we demonstrate an embedded biomimetic nanostructure (EBN) that achieves both effects for hydrogenated amorphous silicon (a-Si:H) solar cells. The fabrication of EBNs is accomplished by patterning an index-matching silicon-nitride layer deposited on a glass substrate using polystyrene nanospheres lithography, followed by reactive ion etching. The profile of EBN is then reproduced layer by layer during the deposition of a-Si:H cells. We show that a solar cell with an optimized EBN exhibits a broadband enhanced external quantum efficiency due to both anti-reflection and light-trapping, with respect to an industrial standard cell using an Asahi U glass substrate which is mostly optimized for light trapping. Overall, the cell with an optimized EBN achieves a large short-circuit current density of 17.74 mA/cm(2), corresponding to a 37.63% enhancement over a flat control cell. The power conversion efficiency is also increased from 5.36% to 8.32%. Moreover, the light management enabled by the EBN remains efficient over a wide range of incident angles up to 60°, which is particularly desirable for real environments with diffused sun light. The novel patterning method is not restricted to a-Si:H solar cells, but is also widely applicable to other thin film materials.


Assuntos
Materiais Biomiméticos/química , Fontes de Energia Elétrica , Nanoestruturas/química , Fenômenos Ópticos , Energia Solar , Absorção , Nanoestruturas/ultraestrutura , Teoria Quântica , Análise Espectral
4.
J Nanosci Nanotechnol ; 11(12): 10729-32, 2011 Dec.
Artigo em Inglês | MEDLINE | ID: mdl-22408983

RESUMO

The enhanced conversion efficiency of the InGaP/GaAs dual-junction solar cell was demonstrated utilizing broad-band and omnidirectional antireflection nanorod arrays. The nanorod arrays were fabricated by self-assembled Ni clusters, followed by inductively-coupled-plasma reactive ion etching. The conversion efficiency measured under one-sun air mass 1.5 global illuminations at room temperature was improved by 10.8%. The light absorption efficiencies of the top InGaP and bottom GaAs cells were also studied under the influence of nanorod arrays. The enhanced absorption efficiency was mostly contributed from the short wavelength absorption by top cell. Surface nanorod arrays served not only as broad-band omnidirectional antireflection layers but also scattering sources. The structure can be further optimized to obtain the maximum conversion efficiency.

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