Visible light photocatalytic properties of one-step SnO2-templated grown SnO2/SnS2heterostructure and SnS2nanoflakes.

The nanoflakes of SnS2/SnO2heterostructure and SnS2were synthesized by a one-step SnO2-templated chemical vapor deposition method. The metal oxide-assisted growth mechanism of SnS2/SnO2heterostructure and SnS2nanoflakes were realized through investigating serial microstructures of products with varied growth time. Furthermore, the photocatalytic activity for MB dyes degradation of varied growth time products was used to explore the effect of product microstructure under the visible light irradiation. The SnO2/SnS2heterostructure and the oxide vacancies of nanoflakes demonstrated an improved visible light photocatalytic performance for MB degradation, which was around twice of the pure SnS2nanoflakes and better than P25. The results of different scavengers on the degradation efficiency for MB indicate the·O2-, and ·OH are the main active species in the photodegradation reaction. The one-step growth mechanism of SnS2/SnO2could prove a facile process to grow metal oxide-metal sulfide heterostructure.

High-stability inorganic perovskite quantum dot-cellulose nanocrystal hybrid films.

Inorganic perovskite quantum dots (IPQDs) such as cesium lead halide (CsPbX3, X = Cl, Br and I) quantum dots have attracted much attention for developing cadmium-free quantum light-emitting displays (QLEDs) based on outstanding light emission properties including narrow full width at half maximum (FWHM), tunable bandgap and ultrahigh (>90%) photoluminescence quantum yield (PLQY). Nevertheless, their poor stability under ambient conditions, at high temperature or under continuous light irradiation is the main problem for practical applications. In this study, a new method is proposed to effectively stabilize CsPbBr3 IPQDs by synthesizing them with sulfate-functionalized cellulose nanocrystals (CNCs) at room temperature without using traditional quantum dot stabilizers such as oleylamine (OLA) and oleic acid (OA). The as-prepared CsPbBr3 IPQD/CNC hybrid paper-like films are highly stable and the relative photoluminescence (PL) intensity can be maintained at 92% under continuous UV light (306 nm, 15 W) illumination for 130 h, >99% at high temperature (100 °C) for 130 h, and >99% in ambient conditions for 15 d. Additionally, the PLQY and FWHM of IPQD/CNC are 45.69% and 22 nm, respectively. The ultrahigh stability and narrow FWHM characteristics proposed here for IPQD/CNC hybrid films can provide new possibilities for practical applications in the future development of IPQD-related devices.

Tunable optical and magnetic properties of Ni-doped CuSe nanowires using an anodic aluminum oxide template assisted hydraulic method.

High uniformity of un-doped and Ni-doped CuSe nanowires have been fabricated by smelting the bulk and injecting the molten liquid into the anodic aluminum oxide (AAO) template. The Ni dopant concentration and morphology of CuSe nanowires can be well controlled via preparing the bulk materials and the channel size of the AAO template, respectively. The cathodoluminescence peaks of the un-doped, 0.5 at% and 1.0 at% Ni-doped CuSe nanowires showed a redshift of about 26 nm and 42 nm, respectively, from un-doped CuSe nanowires (579 nm). Furthermore, above room temperature ferromagnetism was observed in 1.0 at% Ni-doped CuSe nanowires at 300 K. The facile injection molding method fabricated nanowires with tunable optical and magnetic properties which could be applied to prepare various nanomaterials for spintronic devices in the future.

Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition.

ZnS nanowires were synthesized via a vapor-liquid-solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω-1 cm-1, 13.14 cm2 V-1 s-1and 4.27 × 1018 cm-3, respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 106 A W-1, 2.43 × 107, 9 s and 24 s, respectively. Temperature-dependent I-V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I-V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al2O3) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al2O3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al2O3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al2O3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

Versatile Fabrication of Self-Aligned Nanoscale Hall Devices Using Nanowire Masks.

In this work, we present an ingenious method to fabricate self-aligned nanoscale Hall devices using chemically synthesized nanowires as both etching and deposition masks. This versatile method can be extensively used to make nanoribbons out of arbitrary thin films without the need for extremely high alignment accuracy to define the metal contacts. The fabricated nanoribbon width scales with the mask nanowire width (diameter), and it can be easily reduced down to tens of nanometers. The self-aligned metal contacts from the sidewall extend to the top surface of the nanoribbon, and the overlap can be controlled by tuning the deposition recipe. To demonstrate the feasibility, we have fabricated Ta/CoFeB/MgO nanoribbons sputtered on a SiO2/Si substrate with different metal contacts, using synthesized SnO2 nanowires as masks. Anomalous Hall effect measurements have been carried out on the fabricated nanoscale Hall device in order to study the current-induced magnetization switching in the nanoscale heavy metal/ferromagnet heterostructure, which has shown distinct switching behaviors from micron-scale devices. The developed method provides a useful fabrication platform to probe the charge and spin transport in the nanoscale regime.

Direct Mapping of Charge Distribution during Lithiation of Ge Nanowires Using Off-Axis Electron Holography.

The successful operation of rechargeable batteries relies on reliable insertion/extraction of ions into/from the electrodes. The battery performance and the response of the electrodes to such ion insertion and extraction are directly related to the spatial distribution of the charge and its dynamic evolution. However, it remains unclear how charge is distributed in the electrodes during normal battery operation. In this work, we have used off-axis electron holography to measure charge distribution during lithium ion insertion into a Ge nanowire (NW) under dynamic operating conditions. We discovered that the surface region of the Ge core is negatively charged during the core-shell lithiation of the Ge NW, which is counterbalanced by positive charge on the inner surface of the lithiated LixGe shell. The remainder of the lithiated LixGe shell is free from net charge, consistent with its metallic characteristics. The present work provides a vivid picture of charge distribution and dynamic evolution during Ge NW lithiation and should form the basis for tackling the response of these and related materials under real electrochemical conditions.

Electrical detection of spin transport in Si two-dimensional electron gas systems.

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 µm and [Formula: see text] at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Electric-field control of ferromagnetism in Mn-doped ZnO nanowires.

In this Letter, the electric-field control of ferromagnetism was demonstrated in a back-gated Mn-doped ZnO (Mn-ZnO) nanowire (NW) field-effect transistor (FET). The ZnO NWs were synthesized by a thermal evaporation method, and the Mn doping of 1 atom % was subsequently carried out in a MBE system using a gas-phase surface diffusion process. Detailed structural analysis confirmed the single crystallinity of Mn-ZnO NWs and excluded the presence of any precipitates or secondary phases. For the transistor, the field-effect mobility and n-type carrier concentration were estimated to be 0.65 cm(2)/V·s and 6.82 × 10(18) cm(-3), respectively. The magnetic hysteresis curves measured under different temperatures (T = 10-350 K) clearly demonstrate the presence of ferromagnetism above room temperature. It suggests that the effect of quantum confinements in NWs improves Tc, and meanwhile minimizes crystalline defects. The magnetoresistace (MR) of a single Mn-ZnO NW was observed up to 50 K. Most importantly, the gate modulation of the MR ratio was up to 2.5 % at 1.9 K, which implies the electric-field control of ferromagnetism in a single Mn-ZnO NW.

Electrical spin injection and detection in Mn5Ge3/Ge/Mn5Ge3 nanowire transistors.

In this Letter, we report the electrical spin injection and detection in Ge nanowire transistors with single-crystalline ferromagnetic Mn5Ge3 as source/drain contacts formed by thermal reactions. Degenerate indium dopants were successfully incorporated into as-grown Ge nanowires as p-type doping to alleviate the conductivity mismatch between Ge and Mn5Ge3. The magnetoresistance (MR) of the Mn5Ge3/Ge/Mn5Ge3 nanowire transistor was found to be largely affected by the applied bias. Specifically, negative and hysteretic MR curves were observed under a large current bias in the temperature range from T = 2 K up to T = 50 K, which clearly indicated the electrical spin injection from ferromagnetic Mn5Ge3 contacts into Ge nanowires. In addition to the bias effect, the MR amplitude was found to exponentially decay with the Ge nanowire channel length; this fact was explained by the dominated Elliot-Yafet spin-relaxation mechanism. The fitting of MR further revealed a spin diffusion length of lsf = 480 ± 13 nm and a spin lifetime exceeding 244 ps at T = 10 K in p-type Ge nanowires, and they showed a weak temperature dependence between 2 and 50 K. Ge nanowires showed a significant enhancement in the measured spin diffusion length and spin lifetime compared with those reported for bulk p-type Ge. Our study of the spin transport in the Mn5Ge3/Ge/Mn5Ge3 nanowire transistor points to a possible realization of spin-based transistors; it may also open up new opportunities to create novel Ge nanowire-based spintronic devices. Furthermore, the simple fabrication process promises a compatible integration into standard Si technology in the future.