Ballistic PbTe Nanowire Devices.

Disorder is the primary obstacle in the current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected, with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown by using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of 2e2/h are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires as most of the previously studied SAG nanowires (InSb or InAs) have not exhibited zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.

Nitrogen-Blowing Assisted Strategy for Fabricating Large-Area Organic Solar Modules with an Efficiency of 15.6.

Organic solar cells (OSCs) are one of the most promising photovoltaic technologies due to their affordability and adaptability. However, upscaling is a critical issue that hinders the commercialization of OSCs. A significant challenge is the lack of cost-effective and facile techniques to modulate the morphology of the active layers. The slow solvent evaporation leads to an unfavorable phase separation, thus resulting in a low power conversion efficiency (PCE) of organic solar modules. Here, a nitrogen-blowing assisted method is developed to fabricate a large-area organic solar module (active area = 12 cm2) utilizing high-boiling-point solvents, achieving a PCE of 15.6%. The device fabricated with a high-boiling-point solvent produces a more uniform and smoother large-area film, and the assistance of nitrogen-blowing accelerates solvent evaporation, resulting in an optimized morphology with proper phase separation and finer aggregates. Moreover, the device fabricated by the nitrogen-blowing assisted method exhibits improved exciton dissociation, balanced carrier mobility, and reduced charge recombination. This work proposes a universal and cost-effective technique for the fabrication of high-efficiency organic solar modules.

In-Doped ZnO Electron Transport Layer for High-Efficiency Ultrathin Flexible Organic Solar Cells.

Sol-gel processed zinc oxide (ZnO) is one of the most widely used electron transport layers (ETLs) in inverted organic solar cells (OSCs). The high annealing temperature (≈200 °C) required for sintering to ensure a high electron mobility however results in severe damage to flexible substrates. Thus, flexible organic solar cells based on sol-gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium-doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In-doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems. For the PM6:L8-BO system, the efficiency increases from 17.0% for the pristine ZnO-based device to 17.8% for the IZO-based device. The IZO-based device with an active layer of PM6:L8-BO:BTP-eC9 exhibits an even higher efficiency of up to 18.1%. In addition, a 1.2-micrometer-thick inverted ultrathin flexible organic solar cell is fabricated based on the IZO ETL that achieves an efficiency of 17.0% with a power-per-weight ratio of 40.4 W g-1, which is one of the highest efficiency for ultrathin (less than 10 micrometers) flexible organic solar cells.