RESUMO
It is challenging in realizing high-performance transparent organic light-emitting diodes (OLEDs) with symmetrical light emission to both sides. Herein, an efficient transparent OLED with highly balanced white emission to both sides is demonstrated by integrating quasi-periodic nanostructures into the organic emitter and the metal-dielectric composite top electrode, which can simultaneously suppressing waveguide and surface plasmonic loss. The power efficiency and external quantum efficiency are raised to 83.5 lm W-1 and 38.8%, respectively, along with a bi-directional luminance ratio of 1.26. The proposed scheme provides a facile route for extending application scope of transparent OLEDs for future transparent displays and lightings.
RESUMO
We report, for the first time, that an encapsulated silver nanoparticle can be directly converted to a silver nanoshell through a nanoscale localized oxidation and reduction process in the gas phase. Silver can be etched when exposed to a mixture of NH3/O2 gases through a mechanism analogous to the formation of aqueous Tollens' reagent, in which a soluble silver-ammonia complex was formed. Starting with Ag@resorcinol-formaldehyde (RF) resin core-shell nanoparticles, we demonstrate that RF-core@Ag-shell nanoparticles can be prepared successfully when the etching rate and RF thickness were well controlled. Due to the strong surface plasmon resonance (SPR) coupling effect among neighboring silver nanoparticles, the RF@Ag nanoparticle showed great SPR and SERS performance. This process provides a general route to the conversion of Ag-core to Ag-shell nanostructures and might be extended to other systems.
RESUMO
High-efficiency quantum dot light-emitting diodes (QLEDs) were fabricated using inkjet printing with a novel cross-linkable hole transport material N,N'-(9,9'-spirobi[fluorene]-2,7-diylbis[4,1-phenylene])bis(N-phenyl-4'-vinyl-[1,1'-biphenyl]-4-amine) (SDTF). The cross-linked SDTF film has excellent solvent resistance, high thermal stability, and the highest occupied molecular orbital (HOMO) level of -5.54 eV. The inkjet-printed SDTF film is very smooth and uniform, with roughness as low as 0.37 nm, which is comparable with that of the spin-coated film (0.28 nm). The SDTF films stayed stable without any pinhole or grain even after 2 months in air. All-solution-processed QLEDs were fabricated; the maximum external quantum efficiency of 5.54% was achieved with the inkjet-printed SDTF in air, which is comparable to that of the spin-coated SDTF in a glove box (5.33%). Electrical stabilities of both spin-coated and inkjet-printed SDTF at the device level were also investigated and both showed a similar lifetime. The study demonstrated that SDTF is very promising as a printable hole transport material for making QLEDs using inkjet printing.
RESUMO
Film morphology has predominant influence on the performance of multilayered organic light-emitting diodes (OLEDs), whereas there is little reported literature from the angle of the molecular level to investigate the impact on film-forming ability and device performance. In this work, four isomeric cross-linkable electron-transport materials constructed with pyridine, 1,2,4-triazole, and vinylbenzyl ether groups were developed for inkjet-printed OLEDs. Their lowest unoccupied molecular orbital (â¼3.20 eV) and highest occupied molecular orbital (â¼6.50 eV) levels are similar, which are mainly determined by the 1,2,4-triazole groups. The triplet energies of these compounds can be tuned from 2.51 to 2.82 eV by different coupling modes with the core of pyridine, where the 2,6-pyridine-based compound has the highest value of 2.82 eV. Film formation and solubility of the compounds were investigated. It was found that the 2,6-pyridine-based compound outperformed the 2,4-pyridine, 2,5-pyridine, and 3,5-pyridine-based compounds. The spin-coated blue OLEDs based on the four compounds have achieved over 14.0% external quantum efficiencies (EQEs) at the luminance of 100 cd m-2, and a maximum EQE of 12.1% was obtained for the inkjet-printed device with 2,6-pyridine-based compound.
RESUMO
Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.
RESUMO
We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.
RESUMO
Solution-processed perovskite solar cells are attracting increasing interest due to their potential in next-generation hybrid photovoltaic devices. Despite the morphological control over the perovskite films, quantitative information on electronic structures and interface energetics is of paramount importance to the optimal photovoltaic performance. Here, direct and inverse photoemission spectroscopies are used to determine the electronic structures and chemical compositions of various methylammonium lead halide perovskite films (MAPbX3, X = Cl, Br, and I), revealing the strong influence of halide substitution on the electronic properties of perovskite films. Precise control over halide compositions in MAPbX3 films causes the manipulation of the electronic properties, with a qualitatively blue shift along the I â Br â Cl series and showing the increase in ionization potentials from 5.96 to 7.04 eV and the change of transport band gaps in the range from 1.70 to 3.09 eV. The resulting light absorption of MAPbX3 films can cover the entire visible region from 420 to 800 nm. The results presented here provide a quantitative guide for the analysis of perovskite-based solar cell performance and the selection of optimal carrier-extraction materials for photogenerated electrons and holes.