Nondestructive characterization of the structural quality and thickness of large-area graphene on various substrates.

We demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in the out-of-plane absorption coefficients (αTM); they are also correlated to the ratio of the intensities of the D and G bands in Raman spectra of graphene films. In addition, the electronic transition state of graphene within the UV regime assists the characterization of the structural quality. We also demonstrated that the intensities and shifts of the signals in Ψ spectra allow clear identification of the structural qualities and thicknesses, respectively, of graphene films. Moreover, this Ψ-based method can be further applied to graphene films coated on various substrates. In addition, mapping of the values of Ψ is a very convenient and useful means of rapidly characterizing both the structural quality and thickness of 2D materials at local areas. Therefore, this Ψ-based characterization method has great potential for application in the mass production of devices based on large-area graphene.

Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.