The role of Co2+cation addition in enhancing the AC heat induction power of (CoxMn1-x)Fe2O4superparamagnetic nanoparticles.

The physical role of magnetically semi-hard Co2+cation addition in enhancing the AC heat induction temperature (TAC) or specific loss power (SLP) of solid (CoxMn1-x)Fe2O4superparamagnetic iron oxide nanoparticles (SPIONPs) was systematically investigated at the biologically safe and physiologically tolerable range ofHAC(HAC,safe= 1.12 × 109A m-1s-1,fappl= 100 kHz,Happl= 140 Oe (11.2 A m-1)) to demonstrate which physical parameter would be the most critical and dominant in enhancing theTAC(SLP) of SPIONPs. According to the experimentally and theoretically analyzed results, it was clearly demonstrated that the enhancement of magnetic anisotropy (Ku)-dependent AC magnetic softness including the Néel relaxation time constantτN(≈τeff, effective relaxation time constant), and its dependent out-of-phase magnetic susceptibilityχ″primarily caused by the Co2+cation addition is the most dominant parameter to enhance theTAC(SLP). This clarified result strongly suggests that the development of new design and synthesis methods enabling to significantly enhance theKuby improving the crystalline anisotropy, shape anisotropy, stress (magnetoelastic) anisotropy, thermally-induced anisotropy, and exchange anisotropy is the most critical to enhance theTAC(SLP) of SPIONPs at theHAC,safe(particularly at the lowerfappl< 120 kHz) for clinically safe magnetic nanoparticle hyperthermia.

Intrinsic Magnetic Order of Chemically Exfoliated 2D Ruddlesden-Popper Organic-Inorganic Halide Perovskite Ultrathin Films.

Thin film fabrication of 2D layered organic-inorganic hybrid perovskites (2D-OIHPs) for spintronic applications has been attempted using solution-based process like Langmuir-Blodgett technique. However, monolayer or few-layered 2D magnets are not yet realized, even though a wide spectrum of 2D Ruddlesden-Popper (RP) OIHPs are known as quasi-2D Heisenberg magnets in bulk compounds. Here, chemical exfoliation by solvent engineering is applied to successfully synthesize large-sized, few unit-cell-thick 2D RP-OIHPs. Comprehensive structural characterization reveals that binary co-solvents with high relative polarity in spin coating technique are the most effective among nine kinds of solvents. Above all, this enables few-layered 2D RP-OIHP ultrathin films sustaining their intrinsic magnetic order. It is found that XY-like magnetic anisotropy driven by Jahn-Teller effect responsible for ferromagnetism in seven-layered (C6 H5 CH2 CH2 NH3 )2 CuCl4 ultrathin films remains very robust, whereas Ising-like dipolar anisotropy responsible for canted antiferromagnetism in ten-layered (C6 H5 CH2 CH2 NH3 )2 MnCl4 ultrathin films is greatly reduced. It is expected that ferromagnetism even at monolayer limit should be possible by means of further sophisticated solvent engineering as long as Jahn-Teller effect is active. The chemical exfoliation using solvent engineering unambiguously can bring about a new breakthrough in the development of 2D RP-OIHP van der Waals magnets for ultrahigh energy-efficient spintronic, opto-spintronic devices.

Author Correction: Long-range chiral exchange interaction in synthetic antiferromagnets.

In the version of this Article originally published, the sentence 'D.-S.H. wrote the paper with K.L., J.H. and M.K.' in the author contributions was incorrect; it should have read 'D.-S.H. wrote the paper with K.L., J.H., M.-H.J. and M.K.' This has been corrected in the online versions of the Article.

Long-range chiral exchange interaction in synthetic antiferromagnets.

The exchange interaction governs static and dynamic magnetism. This fundamental interaction comes in two flavours-symmetric and antisymmetric. The symmetric interaction leads to ferro- and antiferromagnetism, and the antisymmetric interaction has attracted significant interest owing to its major role in promoting topologically non-trivial spin textures that promise fast, energy-efficient devices. So far, the antisymmetric exchange interaction has been found to be rather short ranged and limited to a single magnetic layer. Here we report a long-range antisymmetric interlayer exchange interaction in perpendicularly magnetized synthetic antiferromagnets with parallel and antiparallel magnetization alignments. Asymmetric hysteresis loops under an in-plane field reveal a unidirectional and chiral nature of this interaction, which results in canted magnetic structures. We explain our results by considering spin-orbit coupling combined with reduced symmetry in multilayers. Our discovery of a long-range chiral interaction provides an additional handle to engineer magnetic structures and could enable three-dimensional topological structures.

Asymmetric Hysteresis for Probing Dzyaloshinskii-Moriya Interaction.

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is intimately related to the prospect of superior domain-wall dynamics and the formation of magnetic skyrmions. Although some experimental efforts have been recently proposed to quantify these interactions and the underlying physics, it is still far from trivial to address the interfacial DMI. Inspired by the reported tilt of the magnetization of the side edge of a thin film structure, we here present a quasi-static, straightforward measurement tool. By using laterally asymmetric triangular-shaped microstructures, it is demonstrated that interfacial DMI combined with an in-plane magnetic field yields a unique and significant shift in magnetic hysteresis. By systematic variation of the shape of the triangular objects combined with a droplet model for domain nucleation, a robust value for the strength and sign of interfacial DMI is obtained. This method gives immediate and quantitative access to DMI, enabling a much faster exploration of new DMI systems for future nanotechnology.

Improved spin-orbit torque induced magnetization switching efficiency by helium ion irradiation.

Increasing the efficiency of spin-orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switching current with helium ion irradiation, but previous researches are focused on its phenomenological changes only. Here, the authors observe the reduction of switching current and analyze its origins. The analyzed major reasons are improved spin Hall angle represented as the changed resistivity of heavy metal layer and the reduction of surface anisotropy energy at interface between heavy metal and ferromagnet. It is confirmed that almost linear relation between changed SHA and Pt resistivity by helium ion irradiation, which is attributed because of the increase in the scattering sources induced by structural distortion during ion penetration. From the calculated power consumption ratio based on the derived parameter, the requiring power decreases according to the degree of ion irradiation. Our results show that helium ion penetration induced layer and interfacial disturbance affects SOT induced magnetization switching current reduction and may provide possibility about helium ion irradiation based superior SOT device engineering.

Control of crystallization and magnetic properties of CoFeB by boron concentration.

Controlling the crystallinity of CoFeB is the most essential issue for designing various spintronics devices. Here we show the microstructure and magnetic properties of MgO/CoFeB/MgO structures for various boron concentration. We present the effect of boron on the crystallinity of CoFeB into two categories: the critical boron concentration (5 ~ 6%) at which CoFeB crystallizes and the effect of remaining boron (0 ~ 5%) in the crystallized CoFeB. And the trends of the saturation magnetization, exchange stiffness, exchange length, domain wall energy and Gilbert damping constant according to the boron concentration are provided. Abrupt variation of properties near the critical boron concentration (5 ~ 6%) and a noticeable change in the crystallized CoFeB (0 ~ 5%) are confirmed, revealing a clear causal relationship with the structural analysis. These results propose that the crystallization, microstructure, and major magnetic properties of CoFeB are governed by the amount of boron, and emphasize the need for delicate control of boron concentration.

Transition of the magnetotransport in a Co-TbN system.

Unexpected magnetism is investigated by measurements of the magnetic and magneto-transport properties in the two phase-separated thin films of nano-sized TbN clusters embedded in Co matrices. The spin-dependent transport depends strongly on the volume fraction of magnetic TbN clusters, especially on the continuity of the magnetic phase. With decreasing the TbN volume fraction, the giant magnetoresistance (GMR) is reduced and the anisotropic magnetoresistance (AMR) is enhanced. Unlike the GMR observed in Co68(TbN)32, the AMR is found in Co72(TbN)28. The room-temperature magnetization exhibits a typical ferromagnetic signal mainly due to the Co matrix, while the low-temperature magnetization shows an additional linear magnetic component. This is attributed to the magnetic moment of TbN at temperatures below the ferromagnetic transition temperature T(C) = 44 K, and the magnetic moments of TbN are coupled with those of Co. The topological and magnetic images support the magnetic exchange at the boundary between the TbN clusters and the Co matrix.

Eigen damping constant of spin waves in ferromagnetic nanostructure.

Though varying in nature, all waves share traits in a way that they all follow the superposition principle while also experiencing attenuation as they propagate in space. And thus it is more than common that a comprehensive investigation of one type of wave leads to a discovery that can be extended to all kinds of waves in other fields of research. In the field of magnetism, the wave of interest corresponds to the spin wave (SW). Specifically, there has been a push to use SWs as the next information carriers similar to how electromagnetic waves are used in photonics. At present, the biggest impediment in making SW-based device to be widely adapted is the fact that the SW experiences large attenuation due to the large damping constant. Here, we developed a method to find the SW eigenmodes and show that their respective eigen damping constants can be 40% smaller than the typical material damping constant. From a bigger perspective, this finding means that the attenuation of SW and also other types of waves in general is no more constrained by the material parameters, and it can be controlled by the shape of the waves instead.

Relation between switching time distribution and damping constant in magnetic nanostructure.

It is widely known that the switching time is determined by the thermal stability parameters and external perturbations such as magnetic field and/or spin polarized current in magnetic nano-structures. Since the thermal stability parameter and switching time are crucial values in the design of spin-transfer torque magnetic random access memory, the measurement of the switching time is important in the study of the switching behavior of ferromagnetic nano-structures. In this study, we focus on the distribution of the switching time. Within the limit of a large energy barrier, a simple analytical expression between damping constant and anisotropy field with switching time distribution is obtained and confirmed by numerically solving the Fokker-Planck equation. We show that the damping constant and anisotropy field can be extracted by measuring the full width half maximum of the switching time distribution in the magnetic nano-structure devices. Furthermore, the present method can be applied to not only single nano-structure, but also inhomogeneous nano-structure arrays.

Bidirectional propagation of tilting domain walls in perpendicularly magnetized T shaped structure with the interfacial Dzyaloshinskii-Moriya interaction.

Understanding of domain wall (DW) propagation in a complex structure is an essential first step toward the development of any magnetic-domain based devices including spin-based logic or magnetic memristors. Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in the structure with broken inversion symmetry induces an asymmetrical DW configuration with respect to the direction of in-plane field. Dynamic behaviors of field-driven DW within the film with perpendicular magnetic anisotropy is influenced by DW tilt from the iDMI effect and the corners in the T-shaped structure of the DW path. Images from Kerr microscopy reveal that the iDMI effective field contributes to a tilted structure of DW configuration and evolution along its propagation. With the combination of iDMI and T-shaped structure, we observed two distinguished bidirectional DW propagations in two output branches and distinct arriving times at the destination pads with a uniform external field. Micromagnetic simulation results is compared with the observed dynamics of a DW configuration in the structure providing an additional confirmation of the interpreted results.

Solvent-dependent self-assembly of two dimensional layered perovskite (C6H5CH2CH2NH3)2MCl4 (M = Cu, Mn) thin films in ambient humidity.

Two dimensional layered organic-inorganic halide perovskites offer a wide variety of novel functionality such as solar cell and optoelectronics and magnetism. Self-assembly of these materials using solution process (ex. spin coating) makes crystalline thin films synthesized at ambient environment. However, flexibility of organic layer also poses a structure stability issue in perovskite thin films against environment factors (ex. moisture). In this study, we investigate the effect of solvents and moisture on structure and property in the (C6H5(CH2)2NH3)2(Cu, Mn)Cl4 (Cu-PEA, Mn-PEA) perovskite thin films spin-coated on Si wafer using three solvents (H2O, MeOH, MeOH + H2O). A combination of x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS) show that relative humidity (RH) has a profound effect on perovskite thin films during sample synthesis and storage, depending on the kind of solvent used. The ones prepared using water (Cu-PEA:H2O, Mn-PEA:H2O) show quite different behavior from the other cases. According to time-dependent XRD, reversible crystalline-amorphous transition takes place depending on RH in the former cases, whereas the latter cases relatively remain stable. It also turns out from XAS that Mn-PEA thin films prepared with solvents such as MeOH and MeOH + H2O are disordered to the depth of about 4 nm from surface.

Reliable Multivalued Conductance States in TaO x Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis.

Transition metal oxide-based memristors have widely been proposed for applications toward artificial synapses. In general, memristors have two or more electrically switchable stable resistance states that device researchers see as an analogue to the ion channels found in biological synapses. The mechanism behind resistive switching in metal oxides has been divided into electrochemical metallization models and valence change models. The stability of the resistance states in the memristor vary widely depending on: oxide material, electrode material, deposition conditions, film thickness, and programming conditions. So far, it has been extremely challenging to obtain reliable memristors with more than two stable multivalued states along with endurances greater than ∼1000 cycles for each of those states. Using an oxygen plasma-assisted sputter deposition method of noble metal electrodes, we found that the metal-oxide interface could be deposited with substantially lower interface roughness observable at the nanometer scale. This markedly improved device reliability and function, allowing for a demonstration of memristors with four completely distinct levels from ∼6 × 10-6 to ∼4 × 10-8 S that were tested up to 104 cycles per level. Furthermore through a unique in situ transmission electron microscopy study, we were able to verify a redox reaction-type model to be dominant in our samples, leading to the higher degree of electrical state controllability. For solid-state synapse applications, the improvements to electrical properties will lead to simple device structures, with an overall power and area reduction of at least 1000 times when compared to SRAM.

Thickness dependence of the interfacial Dzyaloshinskii-Moriya interaction in inversion symmetry broken systems.

In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii-Moriya (IDM) interaction. This interfacial nature of the IDM interaction has been recently revisited because of its scientific and technological potential. Here we demonstrate an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering. The non-reciprocal spin wave dispersions, systematically measured by Brillouin light scattering, allow not only the determination of the IDM energy densities beyond the regime of perpendicular magnetization but also the revelation of the inverse proportionality with the thickness of the magnetic layer, which is a clear signature of the interfacial nature. Altogether, our experimental and theoretical approaches involving double time Green's function methods open up possibilities for exploring magnetic hybrid structures for engineering the IDM interaction.

Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system.

Spin-orbit torques, including the Rashba and spin Hall effects, have been widely observed and investigated in various systems. Since interesting spin-orbit torque (SOT) arises at the interface between heavy nonmagnetic metals and ferromagnetic metals, most studies have focused on the ultra-thin ferromagnetic layer with interface perpendicular magnetic anisotropy. Here, we measured the effective longitudinal and transverse fields of bulk perpendicular magnetic anisotropy Pd/FePd (1.54 to 2.43 nm)/MgO systems using harmonic methods with careful correction procedures. We found that in our range of thicknesses, the effective longitudinal and transverse fields are five to ten times larger than those reported in interface perpendicular magnetic anisotropy systems. The observed magnitude and thickness dependence of the effective fields suggest that the SOT do not have a purely interfacial origin in our samples.

Synchronous precessional motion of multiple domain walls in a ferromagnetic nanowire by perpendicular field pulses.

Magnetic storage and logic devices based on magnetic domain wall motion rely on the precise and synchronous displacement of multiple domain walls. The conventional approach using magnetic fields does not allow for the synchronous motion of multiple domains. As an alternative method, synchronous current-induced domain wall motion was studied, but the required high-current densities prevent widespread use in devices. Here we demonstrate a radically different approach: we use out-of-plane magnetic field pulses to move in-plane domains, thus combining field-induced magnetization dynamics with the ability to move neighbouring domain walls in the same direction. Micromagnetic simulations suggest that synchronous permanent displacement of multiple magnetic walls can be achieved by using transverse domain walls with identical chirality combined with regular pinning sites and an asymmetric pulse. By performing scanning transmission X-ray microscopy, we are able to experimentally demonstrate in-plane magnetized domain wall motion due to out-of-plane magnetic field pulses.