High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors.

Conventional photon detectors necessarily face critical challenges regarding strong wavelength-selective response and narrow spectral bandwidth, which are undesirable for spectroscopic applications requiring a wide spectral range. With this perspective, herein, we overcome these challenges through a free-carrier absorption-based waveguide-integrated bolometer for infrared spectroscopic sensors on a silicon-on-insulator (SOI) platform featuring a spectrally flat response at near-infrared (NIR) range (1520-1620 nm). An in-depth thermal analysis was conducted with a systematic investigation of geometry dependence on the detectors. We achieved great performances: temperature coefficient of resistance (TCR) of -3.786%/K and sensitivity of -26.75%/mW with a low wavelength dependency, which are record-high values among reported waveguide bolometers so far, to our knowledge. In addition, a clear on-off response with the rise/fall time of 24.2/29.2 µs and a 3-dB roll-off frequency of ∼22 kHz were obtained, sufficient for a wide range of sensing applications. Together with the possibility of expanding an operation range to the mid-infrared (MIR) band, as well as simplicity in the detector architecture, our work here presents a novel strategy for integrated photodetectors covering NIR to MIR at room temperature for the development of the future silicon photonic sensors with ultrawide spectral bandwidth.

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips: publisher's note.

This publisher's note contains a correction to Opt. Lett. 47, 714 (2022).

Direct optical wire bonding through open-to-air polymerization for silicon photonic chips.

We developed an inter-chip optical link using direct optical wire (DOW) bonding by open-to-air polymerization. An arch-shaped wire was drawn from a tip in a similar way to a metal wire, but the wire was formed from a polymer solution that solidified in the air during wiring. The DOW bonding was examined for silicon photonic chips where grating couplers are integrated for input/output coupling. Cone-shaped studs were formed at the ends of the wire, and their geometry was optimized using finite-difference time-domain simulation to give a mode conversion function. Although the polymer wire had a multimode scale of 7 µm, the wire bonding between the grating couplers showed a relatively low insertion loss of 5.8 dB at a wavelength of 1590 nm compared to a conventional connection using single-mode fiber blocks. It also showed a larger wavelength tolerance within the range of ∼1520-1590 nm. DOW bonding between a grating coupler and a single-mode fiber were also examined to verify the feasibility of out-of-plane connection with edge-coupling devices. The grating-to-fiber wire link also exhibited a large wavelength tolerance.

On-chip monitoring of far-field patterns using a planar diffractor in a silicon-based optical phased array.

We demonstrate the on-chip monitoring of far-field patterns in a silicon-based optical phased array (OPA) using a planar diffractor and traveling-wave photodetectors (PDs) integrated at the end of the radiator array. To reproduce the diffraction patterns within a silicon slab, the planar diffractor is designed with a diffraction region surrounded by an absorptive boundary and seven discrete outlet waveguides. Each outlet waveguide is linked to the photon-assisted tunneling PD which has a silicon p-n junction and is operated under a reverse bias to detect a sub-bandgap wavelength, 1.3 µm. With the 1×16 OPA and seven detectors, the positions of the main beams aligned to specific directions in the free space were clearly monitored.

Ultra-compact silicon waveguide-integrated Schottky photodetectors using perfect absorption from tapered metal nanobrick arrays.

We propose and numerically analyze an integrated metal-semiconductor Schottky photodetector consisting of a tapered metal nanoblock chain on a silicon ridge waveguide. The metal-semiconductor junctions allow broadband sub-bandgap photodetection through the internal photoemission effects. The tapered array structures with different block widths can gradually tailor the cut-off frequencies and group velocities of the tightly confined plasmonic modes for enhanced light absorption and suppressed reflection of the photonic mode in the silicon waveguide. As a result, according to our simulations, six metal nanobricks with a total device length of 830 nm can almost perfectly absorb the incident sub-bandgap light and subsequently generate photocurrents with a peak responsivity value of 0.125 A/W at 1550 nm. We believe that the proposed design can provide a simple and viable solution for broadband and compact photodetection in the integrated silicon photonics platform.

Thermo-optic control of the longitudinal radiation angle in a silicon-based optical phased array.

We demonstrate longitudinal beam-steering with a 1×16 silicon optical phased array (OPA) using a monochromatic light source and thermo-optic control of the refractive index in the grating radiator region. The refractive index is controlled by forming a series of n-i-n heaters, placing i-regions in each radiator of the OPA. When the biased voltage in the heaters is increased, the refractive index of the radiator region is increased by the thermo-optic effect, and the longitudinal radiation angle is changed according to the Bragg condition. The transversal beam-steering is accomplished by phase control with the phase shifters, which are devised with a p-i-n diode using the electro-optic effect. With these electro-optic p-i-n phase shifters and n-i-n thermo-optic radiators, we achieve a relatively wide 2D beam-steering in a range of 10.0°/45.4° in the longitudinal/transversal directions with a 1.55 µm light source. The tuning efficiency is 0.016°/mW in the longitudinal beam-steering.

Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides.

We demonstrate silicon ridge waveguide photo-detectors capable of sub-bandgap light absorption and avalanche multiplication. The proposed waveguide photo-detectors contain highly doped PN junction, where a strong electric field can generate the photon-assisted tunneling current for sub-bandgap light incidence and amplify the generated photo-current by the avalanche multiplication effect. The voltage-dependent sub-bandgap absorption coefficient and multiplication gain are experimentally evaluated for various doping configurations to find optimal photo-response with low dark currents. As a result, our representative silicon waveguide photo-detector gives sub-bandgap responsivities of ~10 and ~2 A/W under the applied reverse bias voltage of -8.3 V for near-infrared wavelengths of 1.31 and 1.52 µm, respectively. The voltage-dependent frequency photo-response is also demonstrated with theoretical verification.

Free-carrier electro-refraction modulation based on a silicon slot waveguide with ITO.

Recently, silicon-waveguide-based hybrid modulators with high-performance electro-optic materials have been proposed to overcome the intrinsic limitations of silicon materials. Indium-tin-oxide (ITO) is one of the important candidates for such applications due to its unique features including the ENZ effect and electrically tunable permittivity. In this paper, we propose an ultra-compact integrated phase modulator which consists of a silicon slot waveguide with a thin ITO film in the slot region. In the near-infrared regime, bias-voltage-dependent free-carrier accumulation at the dielectric-ITO interface induces an epsilon-near-zero (ENZ) effect, and contributes to the strong phase modulation of the guided electromagnetic wave. With a voltage swing of 2 V, the device experiences a large variation of the effective modal index, resulting in a π radian phase shift within the device length of <5 µm at 210 THz according to our computer simulations. A high modulation efficiency of V(π)L(π)~0.0071 V·cm and a large device bandwidth of ~70 GHz suggest a potential for an ultra-compact optoelectronic component in the integrated silicon photonics platform.

Multiband perfect absorbers using metal-dielectric films with optically dense medium for angle and polarization insensitive operation.

The cavity resonant properties of planar metal-dielectric layered structures with optically dense dielectric media are studied with the aim of realizing omnidirectional and polarization-insensitive operation. The angle-dependent coupling between free-space and cavity modes are revealed to be a key leverage factor in realizing nearly perfect absorbers well-matched to a wide range of incidence angles. We establish comprehensive analyses of the relationship between the structural and optical properties by means of theoretical modeling with numerical simulation results. The presented work is expected to provide a simple and cost-effective solution for light absorption and detection applications that exploit planar metal-dielectric optical devices.

Lasing in hybrid metal-Bragg nanocavities.

We report room-temperature lasing from an optically pumped subwavelength-scale cylindrical InGaAsP pillar surrounded by circular Bragg reflectors on a metal substrate with a dielectric spacer layer. By taking advantage of wide in-plane photonic bandgaps and proper vertical antiresonances, three dielectric Bragg pairs produce a sufficient optical feedback capable of low threshold lasing from the fundamental TE011 mode. A large spontaneous emission coupling into the lasing mode is obtained from the cavity-enhanced Purcell effects and effective suppression of nonlasing modes.

Deep neural network-based phase calibration in integrated optical phased arrays.

Calibrating the phase in integrated optical phased arrays (OPAs) is a crucial procedure for addressing phase errors and achieving the desired beamforming results. In this paper, we introduce a novel phase calibration methodology based on a deep neural network (DNN) architecture to enhance beamforming in integrated OPAs. Our methodology focuses on precise phase control, individually tailored to each of the 64 OPA channels, incorporating electro-optic phase shifters. To effectively handle the inherent complexity arising from the numerous voltage set combinations required for phase control across the 64 channels, we employ a tandem network architecture, further optimizing it through selective data sorting and hyperparameter tuning. To validate the effectiveness of the trained DNN model, we compared its performance with 20 reference beams obtained through the hill climbing algorithm. Despite an average intensity reduction of 0.84 dB in the peak values of the beams compared to the reference beams, our experimental results demonstrate substantial agreements between the DNN-predicted beams and the reference beams, accompanied by a slight decrease of 0.06 dB in the side-mode-suppression-ratio. These results underscore the practical effectiveness of the DNN model in OPA beamforming, highlighting its potential in scenarios that necessitate the intelligent and time-efficient calibration of multiple beams.

High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode.

We present a high phase-shift efficiency Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a V(pi)L(pi) of 1.8 V x cm and phase shifter loss of 4.4 dB/mm. A device using a 750 microm-long phase-shifter exhibits an eye opening at 12.5 Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping.

12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode.

We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.

Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm2, which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7 × 7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

Optically pumped subwavelength-scale metallodielectric nanopatch resonators.

We discuss subwavelength-scale semiconductor metal-optic resonators placed on the metal substrate with various top metal plate sizes. Albeit with large optical losses, addition of metal layers converts a leaky semiconductor nano-block into a highly-confined optical cavity. Optically pumped lasing action is observed with the extended top metal layer that can significantly suppress the radiation losses. Careful investigation of self-heating effects during the optical carrier injection process shows the importance of temperature-dependent material properties in the laser rate equation model and the overall laser performances.

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.