Dual Chalcogen-Bonding Interaction for High-Performance Filterless Narrowband Organic Photodetectors.

A novel green-absorbing organic molecule featuring dual intramolecular chalcogen bonds is synthesized and characterized. This molecule incorporates two such bonds: one between a tellurium atom and the oxygen atom of a carbonyl moiety, and the other between the tellurium atom and the adjacent nitrogen atom within a pyridine moiety. The molecule, featuring dual intramolecular chalcogen bonds exhibits a narrow absorption spectrum and elevated absorption coefficients, closely aligned with a resonance parameter of approximately 0.5. This behavior is due to its cyanine-like characteristics and favorable electrical properties, which are a direct result of its rigid, planar molecular structure. Therefore, this organic molecule forming dual intramolecular chalcogen bonds achieves superior optoelectronic performance in green-selective photodetectors, boasting an external quantum efficiency of over 65% and a full-width at half maximum of less than 95 nm while maintaining the performance after 1000 h of heating aging at 85 °C. Such organic photodetectors are poised to enhance stacked organic photodetector-on-silicon hybrid image sensors, paving the way for the next-generation of high-resolution and high-sensitivity image sensors.

Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots.

Non-toxic InP-based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd-based quantum dots (QDs), for better device efficiency and long-term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state-of-the-art InP-based QD with near-unity luminescence. Here, it is shown that using time-resolved spectroscopic measurements of systematically size-controlled InP/ZnSe/ZnS core/shell/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band-edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band-edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP/ZnSe/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP-based QDs.

Nanotube and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) composite film for the electrode applications in organic thin-film transistor and dye-sensitized solar cells.

In this study, composite films made of coiled carbon nanotubes (CCNTs) and poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were fabricated with different composition ratios. The variations in film properties (including surface morphology, work function, and electrical conductivity) in accordance with the amount of CCNT dosing were investigated. Subsequently, through HCl-methanol treatment, we achieved a significant enhancement in electrical conductivity with little damage to the CCNT features. The characteristics of CCNT/PEDOT:PSS composite film are generally comparable to those of PEDOT:PSS film, and some of them, such as catalytic activity and work function, are significantly higher. On the basis of these versatile features, the CCNT/PEDOT:PSS composite films exhibit excellent performance as source/drain electrode in organic thin-film transistors and as catalytic counter electrode in dye-sensitized solar cells.

Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

Correction for 'Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering' by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615-622.

Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

On the basis of an in situ photoemission spectroscopy (PES) system, we propose a novel, direct diagnosis method for the characterization of graphene (Gr) doping states at organic semiconductor (OSC)/electrode interfaces. Our in situ PES system enables ultraviolet/X-ray photoelectron spectroscopy (UPS/XPS) measurements during the OSC growth or removal process. We directly deposit C60 films on three different p-type dopants-gold chloride (AuCl3), (trifluoromethyl-sulfonyl)imide (TFSI), and nitric acid (HNO3). We periodically characterize the chemical/electronic state changes of the C60/Gr structures during their aging processes under ambient conditions. Depositing the OSC on the p-type doped Gr also prevents severe degradation of the electrical properties, with almost negligible transition over one month, while the p-type doped Gr without an OSC changes a lot following one month of aging. Our results indicate that the chemical/electronic structures of the Gr layer are completely reflected in the energy level alignments at the C60/Gr interfaces. Therefore, we strongly believe that the variation of energy level alignments at the OSC/graphene interface is a key standard for determining the doping state of graphene after a certain period of aging.

Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis.

A novel, direct method for the characterization of the energy level alignments at bulk-heterojunction (BHJ)/electrode interfaces on the basis of electronic spectroscopy measurements is proposed. The home-made in situ photoemission system is used to perform x-ray/ultraviolet photoemission spectroscopy (XPS/UPS), reflection electron energy loss spectroscopy (REELS) and inverse photoemission spectroscopy of organic-semiconductors (OSCs) deposited onto a Au substrate. Through this analysis system, we are able to obtain the electronic structures of a boron subphthalocyanine chloride:fullerene (SubPC:C60) BHJ and those of the separate OSC/electrode structures (SubPC/Au and C60/Au). Morphology and chemical composition analyses confirm that the original SubPC and C60 electronic structures remain unchanged in the electrodes prepared. Using this technique, we ascertain that the position and area of the nearest peak to the Fermi energy (EF = 0 eV) in the UPS (REELS) spectra of SubPC:C60 BHJ provide information on the highest occupied molecular orbital level (optical band gap) and combination ratio of the materials, respectively. Thus, extracting the adjusted spectrum from the corresponding SubPC:C60 BHJ UPS (REELS) spectrum reveals its electronic structure, equivalent to that of the C60 materials. This novel analytical approach allows complete energy-level determination for each combination ratio by separating its electronic structure information from the BHJ spectrum.

Study on the disparate transition behaviors of the electrical/physical properties in PEDOT:PSS film depending on solvent species under a follow-up solution-treatment process.

In most solution-processed organic devices, a poly(3,4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) film is inevitably affected by various conditions during the subsequent solution-coating processes. To investigate the effects of direct solvent exposure on the properties of PEDOT polymerized with PSS (PEDOT:PSS) films, photoemission spectroscopy-based analytical methods were used before and after solvent-coating processes. Our results clearly indicate that PEDOT: PSS films undergo a different transition mechanism depending on the solubility of the solvent in water. The water-miscible solvents induce the solvation of hydrophilic PSS chains. As a result, this process allows the solvent to diffuse into the PEDOT: PSS film, and a conformational change between PEDOT and PSS occurs. On the other hand, the water-immiscible organic solvents cause the partial adsorption of solvent molecules at the PE surface, which leads to changes in the surface properties, including work function. Based on our finding, we demonstrate that the energy-level alignments at the organic semiconductor/electrode interface for the PEDOT: PSS films can be controlled by simple solvent treatments.

Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering.

Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of PEDOT: PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices. Therefore, to overcome such limitations, we propose a top-down method based on photoemission spectroscopy analysis combined with Ar gas cluster ion beam (GCIB) sputtering. Through this method, both energy-level alignments and molecular distributions at various OSC/electrode interfaces can be successfully characterized without reference to any deposition process.

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing.

Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced π-π interactions with C60, which facilitated the formation of a C60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C60 semiconductors. We found that thermal annealing of the C60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V(-1) s(-1). This approach enables the realization of solution-processed C60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.

Functionalized MXene ink enables environmentally stable printed electronics.

Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two-dimensional morphology, are promising candidates for contacts in microelectronics. However, their hydrophilic surfaces, which enable spontaneous environmental degradation and poor dispersion stability in organic solvents, have restricted certain electronic applications. Herein, electrohydrodynamic printing technique is used to fabricate fully solution-processed thin-film transistors with alkylated 3,4-dihydroxy-L-phenylalanine functionalized Ti3C2Tx (AD-MXene) as source, drain, and gate electrodes. The AD-MXene has excellent dispersion stability in ethanol, which is required for electrohydrodynamic printing, and maintains high electrical conductivity. It outperformed conventional vacuum-deposited Au and Al electrodes, providing thin-film transistors with good environmental stability due to its hydrophobicity. Further, thin-film transistors are integrated into logic gates and one-transistor-one-memory cells. This work, unveiling the ligand-functionalized MXenes' potential in printed electrical contacts, promotes environmentally robust MXene-based electronics (MXetronics).

SrTiO3 and (Ba,Sr)TiO3 Films Epitaxially Grown on SrRuO3 Using Atomic Layer Deposition.

High dielectric constant (k) materials have been investigated to improve the performance of dynamic random access memory (DRAM) capacitors. However, the conventional binary oxides have reached their fundamental limit of k < 100. In this study, we investigated alternative ternary oxides, SrTiO3 (STO) and (Ba,Sr)TiO3 (BSTO), which were epitaxially grown on SrRuO3 (SRO) using atomic layer deposition (ALD). The structural compatibility between SRO and STO enables the in situ crystallization of STO during ALD at a low temperature of 300 °C. Consequently, STO on SRO exhibited no film deformation, a common issue during high temperature postdeposition annealing, and maintained superior crystallinity at a thin thickness down to 50 Å. Furthermore, the dielectric constant of STO can be adjusted by modulating its tunable ferroelectric and dielectric properties through Ba doping. BSTO, with a high dielectric constant (kmax:527) achieved at a Ba doping concentration of approximately 50%, displayed a low leakage current density (3.9 × 10-8 A cm-2 @ 1 V) and demonstrated excellent reliability of 1012 cycles in the metal-insulator-metal capacitors. This study proposes a promising alternative to satisfy the extreme EOT required for next-generation DRAM capacitors.

Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.

Threshold-switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis of multinary compounds. Furthermore, after threshold switching, the local structures gradually evolve to more stable energy states owing to the unstable homopolar bonds. Herein, based on trap analysis, DFT simulations, and operando XPS analysis, it is determined that the threshold switching mechanism is deeply related to the charged state of Se-Se homopolar defects. A threshold switching device is demonstrated with an excellent performance through the modification of the local structure via the addition of alloying elements and investigating the time-dependent trap evolution. The results concerning the trap dynamics of local atomic structures in threshold switching phenomena may be used to improve the design of amorphous chalcogenides.

Effect of trifluoroacetic acid on InP/ZnSe/ZnS quantum dots: mimicking the surface trap and their effects on the photophysical properties.

Understanding the precise effects of defects on the photophysical properties of quantum dots (QDs) is essential to their development with near-unity luminescence. Because of the complicated nature of defects in QDs, the origins and detailed roles of the defects still remain rarely understood. In this regard, we used detailed chemical analysis to investigate the effect of surface defects on the optical properties of InP/ZnSe/ZnS QDs by introducing shell defects through controlled trifluoroacetic acid (TFA) etching. TFA treatment on the InP/ZnSe/ZnS QDs partially removed the ZnS shell as well as ligands and reduced the quantum yield by generating energetically deep surface traps. The surface defects of QDs by TFA cause charged trap sites inducing an Auger recombination process with a rate of ca. 200 ps. Based on these results, we proposed possible trap-assisted non-radiative decay pathways between the band-edge state and surface deep traps in InP/ZnSe/ZnS QDs.

Bevel Structure Based XPS Analysis as a Non-Destructive Chemical Probe for Complex Interfacial Structures of Organic Semiconductors.

The bevel structure of organic multilayers produced by finely controlled Ar gas cluster ion beam sputtering preserves both the molecular distribution and chemical states. Nevertheless, there is still an important question of whether this method can be applicable to organic multilayer structures composed of complex or ambiguous interfaces used in real organic optoelectronic devices. Herein, various bevel structures are fabricated from different types of organic semiconductors using a solution-based deposition technique: complicatedly intermixed electron-donor and electron-acceptor bulk heterojunction structure, thin film structure with an internal donor-acceptor concentration gradient, and multi-layered structure with more than three layers. For these organic material combinations listed above, the bevel structure is fabricated with finely tuned Ar gas cluster ion beam sputtering. The location-dependent X-ray photoelectron spectroscopy (XPS) results obtained for each bevel structure exactly correspond to the XPS depth profiles. This result demonstrates that the bevel structure analysis is a powerful method to distinguish subtle differences in chemical component distributions and chemical states of organic semiconductors even with complex or ambiguous interfaces. Ultimately, due to its reliability as verified by this study, the proposed bevel structure analysis is expected to greatly expand other analytical techniques with a limited spatial or depth resolution.

Silver Nanowire Network Hybridized with Silver Nanoparticle-Anchored Ruthenium Oxide Nanosheets for Foldable Transparent Conductive Electrodes.

Facile strategies in flexible transparent conductive electrode materials that can sustain their electrical conductivities under 1 mm-scale radius of curvature are required for wider applications such as foldable devices. We propose a rational design as well as a fabrication process for a silver nanowire-based transparent conductive electrode with low sheet resistance and high transmittance even after prolonged cyclic bending. The electrode is fabricated on a poly(ethylene terephthalate) film through the hybridization of silver nanowires with silver nanoparticles-anchored RuO2 nanosheets. This hybridization significantly improves the performance of the silver nanowire network under severe bending strain and creates an electrically percolative structure between silver nanowires and RuO2 nanosheets in the presence of anchored silver nanoparticles on the surface of RuO2 nanosheets. The resistance change of this hybrid transparent conductive electrode is 8.8% after 200,000 bending cycles at a curvature radius of 1 mm, making it feasible for use in foldable devices.

The fabrication of highly uniform ZnO/CdS core/shell structures using a spin-coating-based successive ion layer adsorption and reaction method.

We developed a successive ion layer adsorption and reaction method based on spin-coating (spin-SILAR) and applied the method to the fabrication of highly uniform ZnO/CdS core/shell nanowire arrays. Because the adsorption, reaction, and rinsing steps occur simultaneously during spin-coating, the spin-SILAR method does not require rinsing steps between the alternating ion adsorption steps, making the growth process simpler and faster than conventional SILAR methods based on dip-coating (dip-SILAR). The ZnO/CdS core/shell nanowire arrays prepared by spin-SILAR had a denser and more uniform structure than those prepared by dip-SILAR, resulting in the higher power efficiency for use in photoelectrochemical cells.

Direct tuning of graphene work function via chemical vapor deposition control.

Besides its unprecedented physical and chemical characteristics, graphene is also well known for its formidable potential of being a next-generation device material. Work function (WF) of graphene is a crucial factor in the fabrication of graphene-based electronic devices because it determines the energy band alignment and whether the contact in the interface is Ohmic or Schottky. Tuning of graphene WF, therefore, is strongly demanded in many types of electronic and optoelectronic devices. Whereas study on work function tuning induced by doping or chemical functionalization has been widely conducted, attempt to tune the WF of graphene by controlling chemical vapor deposition (CVD) condition is not sufficient in spite of its simplicity. Here we report the successful WF tuning method for graphene grown on a Cu foil with a novel CVD growth recipe, in which the CH4/H2 gas ratio is changed. Kelvin probe force microscopy (KPFM) verifies that the WF-tuned regions, where the WF increases by the order of ~250 meV, coexist with the regions of intrinsic WF within a single graphene flake. By combining KPFM with lateral force microscopy (LFM), it is demonstrated that the WF-tuned area can be manipulated by pressing it with an atomic force microscopy (AFM) tip and the tuned WF returns to the intrinsic WF of graphene. A highly plausible mechanism for the WF tuning is suggested, in which the increased graphene-substrate distance by excess H2 gases may cause the WF increase within a single graphene flake. This novel WF tuning method via a simple CVD growth control provides a new direction to manipulate the WF of various 2-dimensional nanosheets as well as graphene.

Direct Printing of Asymmetric Electrodes for Improving Charge Injection/Extraction in Organic Electronics.

Engineering the energy levels of organic conducting materials can be useful for developing high-performance organic field-effect transistors (OFETs), whose electrodes must be well controlled to facilitate easy charge carrier transport from the source to drain through an active channel. However, symmetric source and drain electrodes that have the same energy levels are inevitably unfavorable for either charge injection or charge extraction. In this study, asymmetric source and drain electrodes are simply prepared using the electrohydrodynamic (EHD)-jet printing technique after the careful work function engineering of organic conducting material composites. Two types of additives effectively tune the energy levels of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate-based composites. These solutions are alternately patterned using the EHD-jet printing process, where the use of an electric field makes fine jet control that enables to directly print asymmetric electrodes. The asymmetric combination of EHD-printed electrodes helps in obtaining advanced charge transport properties in p-type and n-type OFETs, as well as their organic complementary inverters. This strategy is believed to provide useful guidelines for the facile patterning of asymmetric electrodes, enabling the desirable properties of charge injection and extraction to be achieved in organic electronic devices.

In-Depth Investigation of the Correlation between Organic Semiconductor Orientation and Energy-Level Alignment Using In Situ Photoelectron Spectroscopy.

Organic semiconductors (OSCs) are of interest for replacing traditional Si-based semiconductors as their flexibility and transparency enable new applications. The properties of OSC materials greatly depend on their orientation and molecular arrangement, which are strongly dependent on the underlying substrate material. Hence, in this study, in situ ultraviolet photoelectron spectroscopy (UPS) is used to elucidate the effect of the substrate on OSC orientation. Two types of OSCs, namely those with shape anisotropy (pentacene, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, and dibenzothiopheno[6,5-b:6',5'-f]thieno[3,2-b]thiophene) and those with shape isotropy (N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine, tris(4-carbazoyl-9-ylphenyl)amine, and [6,6]-phenyl C71 butyric acid methyl ester), are deposited on different electrode materials. The differences in the UPS spectra of these materials are observed directly. In general, the orientation of anisotropic OSC molecules significantly depends on the substrate properties, while that of the isotropic ones do not. All the anisotropic OSC molecules grown on poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate (PEDOT:PSS) electrodes show a greater degree of molecular ordering than those grown on Au and multiwalled carbon nanotube/PEDOT:PSS electrodes. The molecular arrangements within the OSC/electrode structures are reflected in the energy-level shifts in the corresponding UPS spectra and hence in the electronic configurations. The results of this study should aid the design and synthesis of OSC materials with configurations suitable for organic electronic devices.

Revealing In Situ Li Metal Anode Surface Evolution upon Exposure to CO2 Using Ambient Pressure X-Ray Photoelectron Spectroscopy.

Because they deliver outstanding energy density, next-generation lithium metal batteries (LMBs) are essential to the advancement of both electric mobility and portable electronic devices. However, the high reactivity of metallic lithium surfaces leads to the low electrochemical performance of many secondary batteries. Besides, Li deposition is not uniform, which has been attributed to the low ionic conductivity of the anode surface. In particular, lithium exposure to CO2 gas is considered detrimental due to the formation of carbonate on the solid electrolyte interphase (SEI). In this work, we explored the interaction of Li metal with CO2 gas as a function of time using ambient pressure X-ray photoelectron spectroscopy to clarify the reaction pathway and main intermediates involved in the process during which oxalate formation has been detected. Furthermore, when O2 gas is part of the surrounding environment with CO2 gas, the reaction pathway is bypassed to directly promote carbonate as a single product.