High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown ß-Ga2O3 Single-Crystal Films.

Deep-level defects in ß-Ga2O3 that worsen the response speed and dark current (Id) of photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ grown single-crystal Ga2O3 nanoparticle seed layer (NPSL) was used to shorten the response time and reduce the Id of metal-semiconductor-metal (MSM) PDs. With the NPSL, the Id was reduced by 4 magnitudes from 0.389 µA to 81.03 pA, and the decay time (τd1/τd2) decreased from 258/1690 to 62/142 µs at -5 V. In addition, the PDs with the NPSL also exhibit a high responsivity (43.5 A W-1), high specific detectivity (2.81 × 1014 Jones), and large linear dynamic range (61 dB) under 254 nm illumination. The mechanism behind the performance improvement can be attributed to the suppression of the deep-level defects (i.e., self-trapped holes) and increase of the Schottky barrier. The barrier height extracted is increased by 0.18 eV compared with the case without the NPSL. Our work contributes to understanding the relationship between defects and the performance of PDs based on heteroepitaxial ß-Ga2O3 thin films and provides an important reference for the development of high-speed and ultrasensitive deep ultraviolet PDs.

Growth-Promoting Mechanism of Bismuth-Doped Cu(In,Ga)Se2 Solar Cells Fabricated at 400 °C.

The classical high-temperature synthesis process of Cu(In,Ga)Se2 (CIGS) solar cells limits their applications on high-temperature intolerant substrates. In this study, a novel low-temperature (400 °C) fabrication strategy of CIGS solar cells is reported using the bismuth (Bi)-doping method, and its growth-promoting mechanism is systematically studied. Different concentrations of Bi are incorporated into pure chalcopyrite quaternary target sputtered-CIGS films by controlling the thickness of the Bi layer. Bi induces considerable grain growth improvement, and an average of approximately 3% absolute efficiency enhancement is achieved for Bi-doped solar cells in comparison with the Bi-free samples. Solar cells doped with a 50 nm Bi layer yield the highest efficiency of 13.04% (without any antireflective coating) using the low-temperature technology. The copper-bismuth-selenium compounds (Cu-Bi-Se, mainly Cu1.6Bi4.8Se8) are crucial in improving the crystallinity of absorbers during the annealing process. These Bi-containing compounds are conclusively observed at the grain boundaries and top and bottom interfaces of CIGS films. The growth promotion is found to be associated with the superior diffusion capacity of Cu-Bi-Se compounds in CIGS films, and these liquid compounds function as carriers to facilitate crystallization. Bi atoms do not enter the CIGS lattices, and the band gaps (Eg) of absorbers remain unchanged. Bi doping reduces the number of CIGS grain boundaries and increases the copper vacancy content in CIGS films, thereby boosting the carrier concentrations. Cu-Bi-Se compounds in grain boundaries significantly enhance the conductivity of grain boundaries and serve as channels for carrier transport. The valence band, Fermi energy level (EF), and conduction band of Bi-doped CIGS films all move downward. This band shift strengthens the band bending of the CdS/CIGS heterojunction and eventually improves the open circuit voltage (Voc) of solar cells. An effective doping method and a novel mechanism can facilitate the low-temperature preparation of CIGS solar cells.

Significantly Enhanced Detectivity of CIGS Broadband High-Speed Photodetectors by Grain Size Control and ALD-Al2O3 Interfacial-Layer Modification.

The Cu(In,Ga)Se2 (CIGS) thin film has been commercialized as solar cells with great success, but its application for photodetectors still faces some practical challenges, including low detectivity and long response time. In this paper, the structure of the Mo/CIGS/CdS/ZnO/ITO heterojunction has been fabricated, and satisfactory performances of high detectivity and fast response time have been achieved by suppressing the dark current and enhancing the carrier mobility. The controllable growth of CIGS grains is accomplished through optimizing the selenization process, demonstrating that bigger grain sizes resulted in higher carrier mobility and better response characteristics. Particularly, the high rise/decay speed of 3.40/6.46 µs is achieved. Furthermore, the interface of the CIGS/CdS heterojunction has been modified by the Al2O3 layer via the atomic-layer deposition (ALD) process. The dark current of the device is effectively suppressed by the ALD-Al2O3 layer, which remarkably drops from ∼10-7 to ∼10-9 A. As a consequence, the detectivity rises from 3.08 × 1011 to 1.84 × 1012 Jones. In addition, the ALD-Al2O3 layer shows a protective effect as well, which is positive for photoelectrical conversion. Besides, the wide linear dynamic range of 102.1 dB and large -3 dB bandwidth of 78 kHz are acquired. This work suggests that the CIGS-based heterojunction has great potential for high-performance thin-film photodetectors.

Significantly Enhancing Response Speed of Self-Powered Cu2ZnSn(S,Se)4 Thin Film Photodetectors by Atomic Layer Deposition of Simultaneous Electron Blocking and Electrode Protective Al2O3 Layers.

Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) thin film is a promising material for optoelectronic devices. In this work, we fabricate Mo/CZTSSe/CdS/ZnO/ITO (ITO, indium tin oxide) heterojunction photodetectors with favorable self-powered characteristics. The photodetector exhibits exceptional high-frequency photoresponse performance whose -3 dB bandwidth and rise/decay time have reached 1 MHz and 240/340 ns, respectively. For further improvement, ultrathin Al2O3 layer prepared via atomic layer deposition (ALD) process is introduced at the Mo/CZTSSe interface. The influence of ALD-Al2O3 layer thickness and its role on the photoresponse performance are investigated in detail. The interfacial layer proved to serve as a protective layer preventing selenization of Mo electrode, resulting in the reduction of MoSe2 transition layer and the decrease of series resistance of the device. Accordingly, the -3 dB bandwidth is remarkably extended to 3.5 MHz while the rise/decay time is dramatically improved to 60/77 ns with 16 cycles of ALD-Al2O3 layer, which is 4-5 orders of magnitude faster than the other reported CZTSSe photodetectors. Simultaneously, it is revealed that the ALD-Al2O3 interfacial layer acts as an electron blocking layer which leads to the effective suppression of carrier recombination at the rear surface. Consequently, the responsivity and detectivity are enhanced in the entire range while the maximum values are up to 0.39 AW-1 and 2.04 × 1011 Jones with 8 cycles of ALD-Al2O3, respectively. Finally, the CZTSSe photodetector is successfully integrated into a visible light communication system and obtains a satisfying transfer rate of 2 Mbps. These results indicate the satisfying performance of CZTSSe-based thin film photodetectors with great potential applications for communication.