Simple and Safe Synthesis of Yolk-Shell-Structured Silicon/Carbon Composites with Enhanced Electrochemical Properties.

With its substantial theoretical capacity, silicon (Si) is a prospective anode material for high-energy-density lithium-ion batteries (LIBs). However, the challenges of a substantial volume expansion and inferior conductivity in Si-based anodes restrict the electrochemical stability. To address this, a yolk-shell-structured Si-carbon composite, featuring adjustable void sizes, was synthesized using tin (Sn) as a template. A uniform coating of tin oxide (SnO2) on the surface of nano-Si particles was achieved through a simple annealing process. This approach enables the removal of the template with concentrated hydrochloric acid (HCl) instead of hydrofluoric acid (HF), thereby reducing toxicity and corrosiveness. The conductivity of Si@void@Carbon (Si@void@C) was further enhanced by using a high-conductivity carbon layer derived from pitch. By incorporating an internal void, this yolk-shell structure effectively enhanced the low Li+/electron conductivity and accommodated the large volume change of Si. Si@void@C demonstrated an excellent electrochemical performance, retaining a discharge capacity of 735.3 mAh g-1 after 100 cycles at 1.0 A g-1. Even at a high current density of 2.0 A g-1, Si@void@C still maintained a discharge capacity of 1238.5 mAh g-1.

Multifunctional Multigate One-Transistor with Thin Advanced Materials, Logic-in-Memory, and Artificial Synaptic Behaviors.

The high device density and fabrication complexity have hampered the development of the electronics. The advanced designs, which could implement the functions of the circuits with higher device density but less fabrication complexity, are hence required. Meanwhile, the MoS2-based devices have recently attracted considerable attention owing to their advantages such as the ultrathin thickness. However, the MoS2-based multifunctional multigate one-transistor (MGT) designs with logic-in-memory and artificial synaptic functions have rarely been reported. Here, an MGT structure based on the MoS2 channel is proposed, with both the logic-in-memory and artificial synaptic behaviors and with more controllable processes than the manual transfer. The proposed MoS2-based MGT functions could be attributed to the semijunction mechanism and enhanced effect of the additional terminals with improved controllability. This study is the first to demonstrate that the neuromorphic computing, logic gate, and memory functions can all be achieved in a MoS2 MGT device without using any additional layers or plasticity to a transistor. The reported results provide a new strategy for developing brain-like systems and next-generation electronics using multifunctional designs and ultrathin materials.