Revealing the Interaction of Charge Carrier-Phonon Coupling by Quantification of Electronic Properties at the SrTiO3/TiO2 Heterointerface.

Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO3/TiO2 interface. We found an increased high-frequency dielectric constant (ε∞ = 7.1-9.0) and charge carrier density (n = 6.5 × 1019 to 1.5 × 1020 cm-3) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.

Exciton-exciton annihilation in thin indium selenide layers.

The photocarrier recombination in van der Waals layers may determine the device performance based on these materials. Here, we investigated the photocarrier dynamics in a multilayer indium selenide nanofilm using transient absorption spectroscopy. The sub-bandgap transient absorption feature was attributed to the indirect intraband absorption of the photocarriers, which was then exploited as a probe to monitor the photocarrier dynamics. With increasing pump intensities, the photocarrier decay was accelerated because of the rising contribution from a bimolecular recombination channel that was then assigned to exciton-exciton annihilation. The rate constant of the exciton-exciton annihilation was given as (1.8 ± 0.1) × 10-15 cm2 ps-1 from a global fitting of the photocarrier decay kinetics for different pump intensities. Our finding suggests that, in contrast with their monolayer counterpart, the exciton-exciton annihilation is rather inefficient in multilayers due to their weaker Coulomb interaction. Hence, compared with monolayers, the lifetime of photocarriers in multilayers would not be significantly reduced under high-intensity pump conditions, and the apparent photocarrier lifetime could be further improved just by suppressing the monomolecular recombination channels such as trapping.

Hot-carrier transfer at photocatalytic silicon/platinum interfaces.

Interfacial charge transfer from silicon to heterogeneous catalysts plays a key role in silicon-based photoelectrochemical systems. In general, prior to interfacial charge transfer, carriers that are generated by photons with energies above the bandgap dissipate the excess kinetic energy via hot-carrier cooling, and such energy loss limits the maximum power conversion efficiency. The excess energy of hot-carriers, however, could be utilized through hot-carrier transfer from silicon to the catalysts, but such hot-carrier extraction has not yet been demonstrated. Here, we exploit transient reflection spectroscopy to interrogate charge transfer at the interface between silicon and platinum. Quantitative modeling of the surface carrier kinetics indicates that the velocity of charge transfer from silicon to platinum exceeds 2.6 × 107 cm s-1, corresponding to an average carrier temperature of extracted carriers of ∼600 K, two times higher than the lattice temperature. The charge transfer velocity can be controllably reduced by inserting silica spacing layers between silicon and platinum.

A Single-Step Hydrothermal Route to 3D Hierarchical Cu2 O/CuO/rGO Nanosheets as High-Performance Anode of Lithium-Ion Batteries.

As anodes of Li-ion batteries, copper oxides (CuO) have a high theoretical specific capacity (674 mA h g-1 ) but own poor cyclic stability owing to the large volume expansion and low conductivity in charges/discharges. Incorporating reduced graphene oxide (rGO) into CuO anodes with conventional methods fails to build robust interaction between rGO and CuO to efficiently improve the overall anode performance. Here, Cu2 O/CuO/reduced graphene oxides (Cu2 O/CuO/rGO) with a 3D hierarchical nanostructure are synthesized with a facile, single-step hydrothermal method. The Cu2 O/CuO/rGO anode exhibits remarkable cyclic and high-rate performances, and particularly the anode with 25 wt% rGO owns the best performance among all samples, delivering a record capacity of 550 mA h g-1 at 0.5 C after 100 cycles. The pronounced performances are attributed to the highly efficient charge transfer in CuO nanosheets encapsulated in rGO network and the mitigated volume expansion of the anode owing to its robust 3D hierarchical nanostructure.

Size- and dimensionality-dependent optical, magnetic and magneto-optical properties of binary europium-based nanocrystals: EuX (X = O, S, Se, Te).

Europium chalcogenides (EuX, X = O, S, Se, Te), a class of prototypical Heisenberg magnetic semiconductors, exhibit intriguing properties in optics, magnetism, and magneto-optics at the nanoscale, and have broad application potential in optical/magnetic sensors, spintronics, optical isolators, etc. EuX nanocrystals (NCs) exhibit enhanced properties, such as high saturation magnetization, a strong magneto-optic effect (Faraday rotation), and high magneto resistance, which are all unanimously dependent on the NC's size, shape, and surface information. In this report, we give an overview of the fundamental properties of bulk EuX, and illustrate the quantum confinement effects on the optical, magnetic and magneto-optical properties of EuX nanostructures. We then focus on doping and self-assembly-two efficient methods that enhance magnetic properties by manipulating magnetic coupling in EuX nanostructures. In particular, we look towards future research on Eu(2+) NCs, which along with the overview provides an up-to-date platform for evaluating the fundamental properties and application potential of Eu-based semiconductors.

Ferromagnetic Insulating Ground-State Resolved in Mixed Protons and Oxygen Vacancies-Doped La0.67Sr0.33CoO3 Thin Films via Ionic Liquid Gating.

The realization of ferromagnetic insulating ground state is a critical prerequisite for spintronic applications. By applying electric field-controlled ionic liquid gating (ILG) to stoichiometry La0.67Sr0.33CoO3 thin films, the doping of protons (H+) has been achieved for the first time. Furthermore, a hitherto-unreported ferromagnetic insulating phase with a remarkably high Tc up to 180 K has been observed which can be attributed to the doping of H+ and the formation of oxygen vacancies (VO). The chemical formula of the dual-ion migrated film has been identified as La2/3Sr1/3CoO8/3H2/3 based on combined Co L23-edge absorption spectra and configuration interaction cluster calculations, from which we are able to explain the ferromagnetic ground state in terms of the distinct magnetic moment contributions from Co ions with octahedral (Oh) and tetrahedral (Td) symmetries following antiparallel spin alignments. Further density functional theory calculations have been performed to verify the functionality of H+ as the transfer ion and the origin of the novel ferromagnetic insulating ground state. Our results provide a fundamental understanding of the ILG regulation mechanism and shed light on the manipulating of more functionalities in other correlated compounds through dual-ion manipulation.

Dynamic restructuring of nickel sulfides for electrocatalytic hydrogen evolution reaction.

Transition metal chalcogenides have been identified as low-cost and efficient electrocatalysts to promote the hydrogen evolution reaction in alkaline media. However, the identification of active sites and the underlying catalytic mechanism remain elusive. In this work, we employ operando X-ray absorption spectroscopy and near-ambient pressure X-ray photoelectron spectroscopy to elucidate that NiS undergoes an in-situ phase transition to an intimately mixed phase of Ni3S2 and NiO, generating highly active synergistic dual sites at the Ni3S2/NiO interface. The interfacial Ni is the active site for water dissociation and OH* adsorption while the interfacial S acts as the active site for H* adsorption and H2 evolution. Accordingly, the in-situ formation of Ni3S2/NiO interfaces enables NiS electrocatalysts to achieve an overpotential of only 95 ± 8 mV at a current density of 10 mA cm-2. Our work highlighted that the chemistry of transition metal chalcogenides is highly dynamic, and a careful control of the working conditions may lead to the in-situ formation of catalytic species that boost their catalytic performance.

Generating active metal/oxide reverse interfaces through coordinated migration of single atoms.

Identification of active sites in catalytic materials is important and helps establish approaches to the precise design of catalysts for achieving high reactivity. Generally, active sites of conventional heterogeneous catalysts can be single atom, nanoparticle or a metal/oxide interface. Herein, we report that metal/oxide reverse interfaces can also be active sites which are created from the coordinated migration of metal and oxide atoms. As an example, a Pd1/CeO2 single-atom catalyst prepared via atom trapping, which is otherwise inactive at 30 °C, is able to completely oxidize formaldehyde after steam treatment. The enhanced reactivity is due to the formation of a Ce2O3-Pd nanoparticle domain interface, which is generated by the migration of both Ce and Pd atoms on the atom-trapped Pd1/CeO2 catalyst during steam treatment. We show that the generation of metal oxide-metal interfaces can be achieved in other heterogeneous catalysts due to the coordinated mobility of metal and oxide atoms, demonstrating the formation of a new active interface when using metal single-atom material as catalyst precursor.

Free Electron Dynamics and Intrinsic Mobility in Ga2O3 Revealed by Transient Terahertz Conductivity.

Here, we investigate the photoconductivity of gallium oxide thin films at different temperatures using time-resolved terahertz spectroscopy. The photogenerated electrons in the conduction band show a monoexponential decay, implying a first-order electron depopulation mechanism. The electron lifetime increases with rising temperature, and this trend coincides with the temperature dependence of the electron mobility rather than diffusion coefficient, suggesting that electron-hole recombination is determined by directional electron drift instead of random diffusion. The electron mobilities extracted from the transient terahertz conductivity are substantially greater than the previously reported Hall mobilities over a wide temperature range, and this is probably because the electron drift in response to the terahertz field is immune from scattering with macroscopic defects. Thus, the mobilities measured here may represent the intrinsic limit of the electron mobility in gallium oxide crystals. Our finding suggests that the current Hall mobility in this wide bandgap semiconductor is still far below the limit, and the long-range electron transport can be further increased by improving the crystalline quality.

Direct observation of the dynamic reconstructed active phase of perovskite LaNiO3 for the oxygen-evolution reaction.

Ni-based transition metal oxides are promising oxygen-evolution reaction (OER) catalysts due to their abundance and high activity. Identification and manipulation of the chemical properties of the real active phase on the catalyst surface is crucial to improve the reaction kinetics and efficiency of the OER. Herein, we used electrochemical-scanning tunnelling microscopy (EC-STM) to directly observe structural dynamics during the OER on LaNiO3 (LNO) epitaxial thin films. Based on comparison of dynamic topographical changes in different compositions of LNO surface termination, we propose that reconstruction of surface morphology originated from transition of Ni species on LNO surface termination during the OER. Furthermore, we showed that the change in surface topography of LNO was induced by Ni(OH)2/NiOOH redox transformation by quantifying STM images. Our findings demonstrate that in situ characterization for visualization and quantification of thin films is very important for revealing the dynamic nature of the interface of catalysts under electrochemical conditions. This strategy is crucial for in-depth understanding of the intrinsic catalytic mechanism of the OER and rational design of high-efficiency electrocatalysts.

Impact of NiCo2O4/SrTiO3 p-n Heterojunctions on the Interface of Photoelectrochemical Water Oxidation.

Forming semiconductor heterojunctions is a promising strategy to boost the efficiency of solar-driven photoelectrochemical (PEC) water splitting by accelerating the separation and transport of photogenerated charge carriers via an interfacial electric field. However, there is limited research considering the influence of electrolytes on the band alignment of the heterojunction under PEC conditions. In this work, we use a single crystal NiCo2O4/SrTiO3 (NCO/STO) heterojunction with atomic-precision controlled thickness as a model photoelectrode to study the band structure modulations upon getting in contact with the electrolyte and the correlation with the PEC activity. It is found that the band alignment can be tuned by the control of p-n heterojunction film thickness and regulated by the water redox potential (Eredox). When the Fermi level (EF) of the heterojunction is higher/lower than the Eredox, the band bending at the NCO/STO-electrolyte interface will increase/decrease after contacting with the electrolyte. However, when the band bending width of the NCO layer is thinner than its thickness, the electrolyte will not influence the band alignment at the NCO/STO interface. In addition, PEC characterization results show that the 1 nm NCO/STO heterojunction photoanode exhibits superior water-splitting performance, owing to the optimum band structure of the p-n heterojunction and the shorter charge transfer distance.

Confined Cu-OH single sites in SSZ-13 zeolite for the direct oxidation of methane to methanol.

The direct oxidation of methane to methanol (MTM) remains a significant challenge in heterogeneous catalysis due to the high dissociation energy of the C-H bond in methane and the high desorption energy of methanol. In this work, we demonstrate a breakthrough in selective MTM by achieving a high methanol space-time yield of 2678 mmol molCu-1 h-1 with 93% selectivity in a continuous methane-steam reaction at 400 °C. The superior performance is attributed to the confinement effect of 6-membered ring (6MR) voids in SSZ-13 zeolite, which host isolated Cu-OH single sites. Our results provide a deeper understanding of the role of Cu-zeolites in continuous methane-steam to methanol conversion and pave the way for further improvement.

Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films.

Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO6 octahedral rotations throughout LaCoO3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO3 films while suggesting potential applications toward low-power spintronic devices.

The evaluation of Coulombic interaction in the oriented-attachment growth of colloidal nanorods.

An analytical expression of Coulomb interaction between a sphere and a cylindrical rod was derived. Along with a recently reported van der Waals interaction expression, the derived Coulomb interaction expression, for the first time, allows one to quantitatively evaluate the activation energy in the oriented attachment growth of colloidal nanorods.

Ultrafast Anisotropic Evolution of Photoconductivity in Sb2Se3 Single Crystals.

The antimony chalcogenide crystals are composed of quasi-one-dimensional [Sb4X6]n ribbons, which lead to strong anisotropic optical and electronic properties. An attempt to exploit photoconductivity anisotropy in the device fabrication may introduce a rewarding strategy to propel the development of the antimony chalcogenide solar cells. To achieve this, understanding of the dynamic evolution of the photoconductivity anisotropy is required. Here, the photoconductivities along different lattice directions in an antimony selenide single crystal are investigated by time-resolved terahertz spectroscopy. We find that electron trapping results in a variation of the photoconductivity anisotropy accompanied by a decrease in the photoconductivity magnitude, while electron-hole recombination only reduces the magnitude but does not affect the anisotropy. Therefore, measuring the temporal evolution of photoconductivity anisotropy can provide a wealth of information regarding the nature of the photocarrier and also render a probe to selectively evaluate the photoconductivity decay mechanisms.

Bimolecular Self-Trapped Exciton Formation in Bismuth Vanadate.

Bismuth vanadate (BiVO4) is a promising photoanode material for solar-driven water splitting, and knowledge of the photocarrier dynamics in BiVO4 could offer guidance to propel the development of the photoanode performance. Herein, we uncovered the nature of various photogenerated transient species in BiVO4 and extracted their respective dynamics. We found spectral and dynamic evidence that the electrons in the conduction band collapsed into severely localized small electron polarons on a subpicosecond time scale, while the holes in the valence band remained delocalized and accounted for the photoconductivity. In the following tens to hundreds of picoseconds, the electron polaron captured the hole to form a self-trapped exciton via a bimolecular reaction mechanism, and in consequence, the hole was immobilized. Our finding suggests that exciton dissociation strategies should be taken into account in the design of the BiVO4-based water-splitting applications in order to enhance charge transport and suppress charge recombination.

Modulation of the Bi3+ 6s2 Lone Pair State in Perovskites for High-Mobility p-Type Oxide Semiconductors.

Oxide semiconductors are key materials in many technologies from flat-panel displays，solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba2 BiMO6 (M = Bi, Nb, Ta) via the Bi 6s2 lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm2 V-1 s-1 , and optical bandgaps widely varying from 1.5 to 3.2 eV. Pulsed laser deposition is used to grow high quality epitaxial thin films. Synergistic combination of hard x-ray photoemission, x-ray absorption spectroscopies, and density functional theory calculations are used to gain insight into the electronic structure of Ba2 BiMO6 . The high mobility is attributed to the highly dispersive VB edges contributed from the strong coupling of Bi 6s with O 2p at the top of VB that lead to low hole effective masses (0.4-0.7 me ). Large variation in bandgaps results from the change in the energy positions of unoccupied Bi 6s orbital or Nb/Ta d orbitals that form the bottom of conduction band. P-N junction diode constructed with p-type Ba2 BiTaO6 and n-type Nb doped SrTiO3 exhibits high rectifying ratio of 1.3 × 104 at ±3 V, showing great potential in fabricating high-quality devices. This work provides deep insight into the electronic structure of Bi3+ based perovskites and guides the development of new p-type oxide semiconductors.

Layered Pd oxide on PdSn nanowires for boosting direct H2O2 synthesis.

Hydrogen peroxide (H2O2) has the wide range of applications in industry and living life. However, the development of the efficient heterogeneous catalyst in the direct H2O2 synthesis (DHS) from H2 and O2 remains a formidable challenge because of the low H2O2 producibility. Herein, we develop a two-step approach to prepare PdSn nanowire catalysts, which comprises Pd oxide layered on PdSn nanowires (PdL/PdSn-NW). The PdL/PdSn-NW displays superior reactivity in the DHS at zero Celcius, presenting the H2O2 producibility of 528 mol kgcat-1·h-1 and H2O2 selectivity of >95%. A layer of Pd oxide on the PdSn nanowire generates bi-coordinated Pd, leading to the different adsorption behaviors of O2, H2 and H2O2 on the PdL/PdSn-NW. Furthermore, the weak adsorption of H2O2 on the PdL/PdSn-NW contributes to the low activation energy and high H2O2 producibility. This surface engineering approach, depositing metal layer on metal nanowires, provides a new insight in the rational designing of efficient catalyst for DHS.

Surface energies control the self-organization of oriented In2O3 nanostructures on cubic zirconia.

Highly aligned one-dimensional (1D) nanorods of the transparent conducting oxide In(2)O(3) have been grown on (110)-oriented Y-stabilized ZrO(2) substrates, whereas growth on (100) and (111) substrates leads respectively to blocklike 3D islands and continuous films. It is shown that the striking influence of substrate orientation on the growth morphology is controlled by differences in energies between the low index surfaces of In(2)O(3) and that spontaneous self-organization is driven by minimization of surface energies.

Recombination of Polaronic Electron-Hole Pairs in Hematite Determined by Nuclear Quantum Tunneling.

Here, we investigate the intrinsic nonradiative recombination mechanism in hematite single crystals that decides the photocarrier lifetime under solar illumination. On the basis of the small polaron theory, we propose that the photogenerated electron-hole pair along with its induced lattice deformation in hematite could be treated as a pseudocoordination-complex (PCC) dispersed in a solid medium. We demonstrate that the nonradiative recombination rate at different temperatures determined from the transient absorption spectroscopy can be excellently described by the nonradiative transition theory developed previously for parallels of the PCC model. Our finding suggests that at room temperature the nonradiative recombination in hematite substantially depends on the probability of quantum tunneling of the nuclear configuration.