Ubiquitous coexisting electron-mode couplings in high-temperature cuprate superconductors.

In conventional superconductors, electron-phonon coupling plays a dominant role in generating superconductivity. In high-temperature cuprate superconductors, the existence of electron coupling with phonons and other boson modes and its role in producing high-temperature superconductivity remain unclear. The evidence of electron-boson coupling mainly comes from angle-resolved photoemission (ARPES) observations of [Formula: see text]70-meV nodal dispersion kink and [Formula: see text]40-meV antinodal kink. However, the reported results are sporadic and the nature of the involved bosons is still under debate. Here we report findings of ubiquitous two coexisting electron-mode couplings in cuprate superconductors. By taking ultrahigh-resolution laser-based ARPES measurements, we found that the electrons are coupled simultaneously with two sharp modes at [Formula: see text]70meV and [Formula: see text]40meV in different superconductors with different dopings, over the entire momentum space and at different temperatures above and below the superconducting transition temperature. These observations favor phonons as the origin of the modes coupled with electrons and the observed electron-mode couplings are unusual because the associated energy scales do not exhibit an obvious energy shift across the superconducting transition. We further find that the well-known "peak-dip-hump" structure, which has long been considered a hallmark of superconductivity, is also omnipresent and consists of "peak-double dip-double hump" finer structures that originate from electron coupling with two sharp modes. These results provide a unified picture for the [Formula: see text]70-meV and [Formula: see text]40-meV energy scales and their evolutions with momentum, doping and temperature. They provide key information to understand the origin of these energy scales and their role in generating anomalous normal state and high-temperature superconductivity.

Nanosecond pulsed single longitudinal mode diamond Raman laser in the 1.6†µm spectral region.

We demonstrate the first nanosecond pulsed single longitudinal mode (SLM) intracavity-pumped diamond Raman laser, to the best of our knowledge. The eye-safe coherent source at 1634 nm, which was converted from the actively Q-switched 1342 nm Nd:YVO4 laser, yielded 4.35 W of multimode average output power with a pulse duration of 6 ns and peak power of 29 kW. By exploiting the spatial hole burning free gain mechanism in the Raman media, stable SLM operation was observed at low output power (0.46 W) for the free-running case. Furthermore, by incorporating an etalon in the fundamental standing-wave cavity, the spectral linewidth of the fundamental field was suppressed substantially below the diamond Raman gain linewidth and slightly less than the free spectral range of the mm-scale Raman resonator. Thereby, a much higher SLM output power of 1.63 W was obtained with a pulse duration of ∼9 ns and a spectral linewidth of ∼77 MHz.

High-energy single-frequency 167 nm deep-ultraviolet laser.

We report a high-energy single-frequency deep-ultraviolet (DUV) solid-state laser at 167.079 nm by the eighth-harmonic generation of a diode-pumped Nd:LGGG laser. A maximum DUV laser output energy of 1.5 µJ at a 5 Hz repetition rate with a 200 µs pulse duration is achieved. The central wavelength of the DUV laser is located at 167.079 nm and can be finely tuned from 167.075 to 167.083 nm. The linewidth is estimated to be 0.025 pm. To the best of our knowledge, this is the first Letter reporting a high-energy single-frequency solid-state DUV laser below 170 nm. The successful demonstration of the high-energy single-frequency DUV laser source with the unique wavelength is useful for direct detection of a Al+27 ion via resonance fluorescence in a multi-ion optical clock.

Sub-pm linewidth nanosecond Nd:GYSGG laser at 1336.6 nm.

We demonstrate a sub-pm linewidth acousto-optic (AO) Q-switched nanosecond Nd:GYSGG ring laser at 1336.6 nm side-pumped by 808-nm quasi-continuous wave (QCW) diode lasers for the first time. With incident pulse energy of 4.23 J at 10 Hz, a maximum output macropulse energy of 36.7 mJ at 1336.6 nm with linewidth of less than 0.85 pm and a micropulse width of 300 ns was obtained at a repetition rate of 80 Hz, corresponding to an average micropulse peak power of 15.3 kW. The M² factors were measured to be 1.42 and 1.10 in x and y directions, respectively. It can be tuned from 1336.576 to 1336.652 nm with a tuning resolution of 1 pm. The 1336.632 nm can be converted to deep ultraviolet (DUV) laser at 167.079 nm through its eighth harmonics, which is very useful for the ²7Al⁺ optical frequency standard.

167.75-nm vacuum-ultraviolet ps laser by eighth-harmonic generation of a 1342-nm Nd:YVO4 amplifier in KBBF.

We demonstrate a ps 167.75-nm vacuum-ultraviolet (VUV) laser by cascaded second-harmonic generation (SHG). The VUV laser is produced by eighth-harmonic generation (EHG) of a mode-locked ps 1342-nm Nd:YVO4 amplifier through three stages cascaded SHG with two LiB3O5 crystals and one KBe2BO3F2 crystal, successively. The 167.75-nm laser provides up to 65-µW output power, and the corresponding photon flux and photon flux density are 5.5×10(13) s(-1) and 1.6×10(18) s(-1)·cm(-2), respectively.

7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror.

A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality. A maximum average output power of 7.63 W was obtained with a repetition rate of 77 MHz and a pulse duration of 24.2 ps under an absorbed pump power of 38.6 W, corresponding to an optical-optical efficiency of 19.7% and a slope efficiency of 25.9%, respectively. The beam quality factor M(2) was measured to be 1.49.

Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi(2)Se(3) and Bi(2)Te(3), upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications.

ARPES detection of superconducting gap sign in unconventional superconductors.

The superconducting gap symmetry is crucial in understanding the underlying superconductivity mechanism. Angle-resolved photoemission spectroscopy (ARPES) has played a key role in determining the gap symmetry in unconventional superconductors. However, it has been considered so far that ARPES can only measure the magnitude of the superconducting gap but not its phase; the phase has to be detected by other phase-sensitive techniques. Here we propose a method to directly detect the superconducting gap sign by ARPES. This method is successfully validated in a cuprate superconductor Bi2Sr2CaCu2O8+δ with a well-known d-wave gap symmetry. When two bands have a strong interband interaction, the resulted electronic structures in the superconducting state are sensitive to the relative gap sign between the two bands. Our present work provides an approach to detect the gap sign and can be applied to various superconductors, particularly those with multiple orbitals like the iron-based superconductors.

Orbital-dependent electron correlation in double-layer nickelate La3Ni2O7.

The latest discovery of high temperature superconductivity near 80 K in La3Ni2O7 under high pressure has attracted much attention. Many proposals are put forth to understand the origin of superconductivity. The determination of electronic structures is a prerequisite to establish theories to understand superconductivity in nickelates but is still lacking. Here we report our direct measurement of the electronic structures of La3Ni2O7 by high-resolution angle-resolved photoemission spectroscopy. The Fermi surface and band structures of La3Ni2O7 are observed and compared with the band structure calculations. Strong electron correlations are revealed which are orbital- and momentum-dependent. A flat band is formed from the Ni-3d z 2 orbitals around the zone corner which is ~ 50 meV below the Fermi level and exhibits the strongest electron correlation. In many theoretical proposals, this band is expected to play the dominant role in generating superconductivity in La3Ni2O7. Our observations provide key experimental information to understand the electronic structure and origin of high temperature superconductivity in La3Ni2O7.

Coexistence of two sharp-mode couplings and their unusual momentum dependence in the superconducting state of Bi2Sr2CaCu2O(8+δ) revealed by laser-based angle-resolved photoemission.

High-resolution laser-based angle-resolved photoemission measurements have been carried out on Bi2Sr2CaCu2O(8+δ) (Bi2212) superconductors to investigate momentum dependence of electron coupling with collective excitations (modes). Two coexisting energy scales are clearly revealed over a large momentum space for the first time in the superconducting state of the overdoped Bi2212 superconductor. These two energy scales exhibit distinct momentum dependence: one keeps its energy near 78 meV over a large momentum space while the other changes its energy from ∼40 meV near the antinodal region to ∼70 meV near the nodal region. These observations provide a new picture on momentum evolution of electron-boson coupling in Bi2212 that electrons are coupled with two sharp modes simultaneously over a large momentum space in the superconducting states. Their unusual momentum dependence poses a challenge to our current understanding of electron-mode-coupling and its role for high-temperature superconductivity in cuprate superconductors.

Observation of flat band, Dirac nodal lines and topological surface states in Kagome superconductor CsTi3Bi5.

Kagome lattices of various transition metals are versatile platforms for achieving anomalous Hall effects, unconventional charge-density wave orders and quantum spin liquid phenomena due to the strong correlations, spin-orbit coupling and/or magnetic interactions involved in such a lattice. Here, we use laser-based angle-resolved photoemission spectroscopy in combination with density functional theory calculations to investigate the electronic structure of the newly discovered kagome superconductor CsTi3Bi5, which is isostructural to the AV3Sb5 (A = K, Rb or Cs) kagome superconductor family and possesses a two-dimensional kagome network of titanium. We directly observe a striking flat band derived from the local destructive interference of Bloch wave functions within the kagome lattice. In agreement with calculations, we identify type-II and type-III Dirac nodal lines and their momentum distribution in CsTi3Bi5 from the measured electronic structures. In addition, around the Brillouin zone centre, [Formula: see text] nontrivial topological surface states are also observed due to band inversion mediated by strong spin-orbit coupling.

Distinct fermi surface topology and nodeless superconducting gap in a (Tl0.58Rb0.42)Fe1.72Se2 superconductor.

High resolution angle-resolved photoemission measurements have been carried out to study the electronic structure and superconducting gap of the (Tl0.58Rb0.42)Fe1.72Se2 superconductor with a T(c) = 32 K. The Fermi surface topology consists of two electronlike Fermi surface sheets around the Γ point which is distinct from that in all other iron-based superconductors reported so far. The Fermi surface around the M point shows a nearly isotropic superconducting gap of ∼12 meV. The large Fermi surface near the Γ point also shows a nearly isotropic superconducting gap of ∼15 meV, while no superconducting gap opening is clearly observed for the inner tiny Fermi surface. Our observed new Fermi surface topology and its associated superconducting gap will provide key insights and constraints into the understanding of the superconductivity mechanism in iron-based superconductors.

Genuine electronic structure and superconducting gap structure in (Ba0.6K0.4)Fe2As2 superconductor.

The electronic structure and superconducting gap structure are prerequisites to establish microscopic theories in understanding the superconductivity mechanism of iron-based superconductors. However, even for the most extensively studied optimally-doped (Ba0.6K0.4)Fe2As2, there remain outstanding controversies on its electronic structure and superconducting gap structure. Here we resolve these issues by carrying out high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements on the optimally-doped (Ba0.6K0.4)Fe2As2 superconductor using both Helium lamp and laser light sources. Our results indicate the "flat band" feature observed around the Brillouin zone center in the superconducting state originates from the combined effect of the superconductivity-induced band back-bending and the folding of a band from the zone corner to the center. We found direct evidence of the band folding between the zone corner and the center in both the normal and superconducting state. Our resolution of the origin of the flat band makes it possible to assign the three hole-like bands around the zone center and determine their superconducting gap correctly. Around the zone corner, we observe a tiny electron-like band and an M-shaped band simultaneously in both the normal and superconducting states. The obtained gap size for the bands around the zone corner (~5.5 meV) is significantly smaller than all the previous ARPES measurements. Our results establish a new superconducting gap structure around the zone corner and resolve a number of prominent controversies concerning the electronic structure and superconducting gap structure in the optimally-doped (Ba0.6K0.4)Fe2As2. They provide new insights in examining and establishing theories in understanding superconductivity mechanism in iron-based superconductors.

Tunable deep ultraviolet laser based near ambient pressure photoemission electron microscope for surface imaging in the millibar regime.

A newly developed instrument comprising a near ambient pressure (NAP) photoemission electron microscope (PEEM) and a tunable deep ultraviolet (DUV) laser source is described. This NAP-PEEM instrument enables dynamic imaging of solid surfaces in gases at pressures up to 1 mbar. A diode laser (976 nm) can illuminate a sample from the backside for in situ heating in gases up to 1200 K in minutes. The DUV laser with a tunable wavelength between 175 nm and 210 nm is perpendicularly incident onto the sample surface for PEEM imaging of a wide spectrum of solids with different surface work functions. Using this setup, we have first demonstrated spatiotemporal oscillation patterns of CO oxidation reaction on Pt(110) from high vacuum to NAPs and gas-induced restructuring of metal nanostructures in millibar gases. The new facility promises important applications in heterogeneous catalysis, electrochemical devices, and other surface processes under nearly working conditions.

Emergence of superconductivity from fully incoherent normal state in an iron-based superconductor (Ba0.6K0.4)Fe2As2.

In unconventional superconductors, it is generally believed that understanding the physical properties of the normal state is a pre-requisite for understanding the superconductivity mechanism. In conventional superconductors like niobium or lead, the normal state is a Fermi liquid with a well-defined Fermi surface and well-defined quasipartcles along the Fermi surface. Superconductivity is realized in this case by the Fermi surface instability in the superconducting state and the formation and condensation of the electron pairs (Cooper pairing). The high temperature cuprate superconductors, on the other hand, represent another extreme case that superconductivity can be realized in the underdoped region where there is neither well-defined Fermi surface due to the pseudogap formation nor quasiparticles near the antinodal regions in the normal state. Here we report a novel scenario that superconductivity is realized in a system with well-defined Fermi surface but without quasiparticles along the Fermi surface in the normal state. High resolution laser-based angle-resolved photoemission measurements have been performed on an optimally-doped iron-based superconductor (Ba0.6K0.4)Fe2As2. We find that, while sharp superconducting coherence peaks emerge in the superconducting state on the hole-like Fermi surface sheets, no quasiparticle peak is present in the normal state. Its electronic behaviours deviate strongly from a Fermi liquid system. The superconducting gap of such a system exhibits an unusual temperature dependence that it is nearly a constant in the superconducting state and abruptly closes at Tc. These observations have provided a new platform to study unconventional superconductivity in a non-Fermi liquid system.

Temperature-induced Lifshitz transition in topological insulator candidate HfTe5.

The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics. Recently, HfTe5 ignited renewed interest as a candidate of a novel topological material. The single-layer HfTe5 is predicted to be a two-dimensional large band gap topological insulator and can be stacked into a bulk that may host a temperature-driven topological phase transition. Historically, HfTe5 attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type. The origin of the transport anomaly remains under a hot debate. Here we report the first high-resolution laser-based angle-resolved photoemission measurements on the temperature-dependent electronic structure in HfTe5. Our results indicated that a temperature-induced Lifshitz transition occurs in HfTe5, which provides a natural understanding on the origin of the transport anomaly in HfTe5. In addition, our observations suggest that HfTe5 is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5.

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.

Orbital-selective spin texture and its manipulation in a topological insulator.

Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we report a new phenomenon of the spin texture locking with the orbital texture in a topological insulator Bi2Se3. We observe light-polarization-dependent spin texture of both the upper and lower Dirac cones that constitutes strong evidence of the orbital-dependent spin texture in Bi2Se3. The different spin texture detected in variable polarization geometry is the manifestation of the spin-orbital texture in the initial state combined with the photoemission matrix element effects. Our observations provide a new orbital degree of freedom and a new way of light manipulation in controlling the spin structure of the topological insulators that are important for their future applications in spin-related technologies.

Disappearance of nodal gap across the insulator-superconductor transition in a copper-oxide superconductor.

The parent compound of the copper-oxide high-temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial in understanding the unusual physical properties of high-temperature superconductors and the superconductivity mechanism. Here we report high-resolution angle-resolved photoemission measurement on heavily underdoped Bi2Sr2-xLaxCuO(6+δ) system. The electronic structure of the lightly doped samples exhibit a number of characteristics: existence of an energy gap along the nodal direction, d-wave-like anisotropic energy gap along the underlying Fermi surface, and coexistence of a coherence peak and a broad hump in the photoemission spectra. Our results reveal a clear insulator-superconductor transition at a critical doping level of ~0.10 where the nodal energy gap approaches zero, the three-dimensional antiferromagnetic order disappears, and superconductivity starts to emerge. These observations clearly signal a close connection between the nodal gap, antiferromagnetism and superconductivity.

Tunable Dirac fermion dynamics in topological insulators.

Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving relativistic Dirac fermions which are responsible for exotic quantum phenomena and potential applications in spintronics and quantum computations. It is essential to understand how the Dirac fermions interact with other electrons, phonons and disorders. Here we report super-high resolution angle-resolved photoemission studies on the Dirac fermion dynamics in the prototypical Bi2(Te,Se)3 topological insulators. We have directly revealed signatures of the electron-phonon coupling and found that the electron-disorder interaction dominates the scattering process. The Dirac fermion dynamics in Bi2(Te3-xSex) topological insulators can be tuned by varying the composition, x, or by controlling the charge carriers. Our findings provide crucial information in understanding and engineering the electron dynamics of the Dirac fermions for fundamental studies and potential applications.