Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering.

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report electrically controllable ferroelectricity in a Hf0.5Zr0.5O2-based heterostructure with Sr-doped LaMnO3, a mixed ionic-electronic conductor, as an electrode. Electrically reversible extraction and insertion of an oxygen vacancy into Hf0.5Zr0.5O2 are macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multilevel polarization states modulated by the electric field. Our study demonstrates the usefulness of the mixed conductor to repair, create, manipulate, and utilize advanced ferroelectric functionality. Furthermore, the programmed ferroelectric heterostructures with Si-compatible doped hafnia are desirable for the development of future ferroelectric electronics.

Liquid Metal Doping Induced Asymmetry in Two-Dimensional Metal Oxides.

The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.

Improving the ferroelectric properties of Lu doped Hf0.5Zr0.5O2thin films by capping a CeOxlayer.

Lu doped Hf0.5Zr0.5O2(HZO) ferroelectric films were prepared on Pt/TiN/SiO2/Si substrate by chemical solution deposition method, and an interfacial engineering strategy for improving the ferroelectric property was explored by capping the Lu doped HZO films with a cerium oxide layer. Compared with the Lu doped HZO film without the CeOxcoating layer, the Lu doped HZO film with the CeOxcoating layer has a larger remanent polarization (2Pr= 34.72µC cm-2) and presents weaker wake-up behavior, which result from the higher orthogonal phase ratio and the lower oxygen vacancy of the CeOxcoated Lu doped HZO film. In addition, the CeOxcoating can remarkably improve the fatigue resistance and retention performance of the Lu doped HZO films. It is hoped that the results can provide an effective approach for the realization of high-performance and highly reliable hafnium oxide based ferroelectric thin films.

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2ferroelectric films with different thicknesses.

HfO2-based ferroelectric materials as the most promising candidate for the ferroelectric memories, have been widely studied for more than a decade due to their excellent ferroelectric properties and CMOS compatibility. In order to realize its industrialization as soon as possible, researchers have been devoted to improving the reliability performance, such as wake up, imprint, limited endurance, et al. Among them, the breakdown characteristic is one of main failure mechanisms of HfO2-based ferroelectric devices, which limits the write/read reliability of the devices. Based on this, we systematically studied the effect of thickness on the time-dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2(HZO) FE films under both forward and reverse electrical stress conditions. The thickness of HZO FE film ranged from 6 to 20 nm. Our findings reveal that decreasing the thickness of the HZO FE film leads to an improvement in TDDB tolerance capability which is attributed to the fact that higher density of oxygen vacancies in thinner HZO FE films can effectively inhibit the generation of new oxygen vacancies and the growth of conductive filaments, thus effectively improving the TDDB characteristics. These results provide a potential solution for mitigating breakdown characteristics of HfO2-based ferroelectric devices in memory applications.

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2ferroelectric capacitors towards long endurance and high temperature retention.

A novel defect control approach based on laminated HfO2/ZrO2with multifunctional TiN/Mo/TiOxNyelectrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1011cycles while retaining a 2Pr value of 34 (µC cm-2) at 3.4 MV cm-1. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoOx/TiOxNybetween top electrode and the insulating oxide. This 2.5 nm thick TiOxNybarrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10 years data retention is achieved at 109.6 °C, surpassing traditional SS-HZO of 78.2 °C with a 450 °C rapid thermal annealing (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory.

Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing.

To break the von Neumann bottleneck, emerging non-volatile memories have gained extensive attention in hardware implementing neuromorphic computing. The device scaling with low operating voltage is of great importance for delivering a high-integrating and energy-efficient neuromorphic system. In this paper, we fabricated sub-10 nm ferroelectric capacitors based on HfZrO (HZO) film with varying HfO and ZrO components. Compared to the conventional HZO capacitors (a constant component of 1:1), the varying component ferroelectric capacitors show similar remnant polarization but a lower coercive electric field (Ec). This enables the partial domain switching processed at a lower pulse amplitude and width, which is essential for emulating typical synaptic features. In the MNIST recognition task, the accuracy of sub-10 nm ferroelectric artificial synapse can approach ∼85.83%. Our findings may provide great potential for developing next-generation neuromorphic computing-based ultra-scaled ferroelectric artificial synapses.

Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film.

HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO2-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2devices by control of oxygen-deficient layer.

The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO2based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrOxsuggest the strong effect of IrOxin controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation. W/HZO/IrOxdevices show high remnant polarization (2Pr) âˆ¼ 53µC cm-2, wake-up free endurance cycling characteristics, low leakage current with demonstration of low annealing temperature requirement as low as 350 °C, valuable for back-end-of-line integration. Further, sub-5 nm HZO thicknesses-based W/HZO/IrOxdevices demonstrate high 2Prand wake-up free ferroelectric characteristics, which can be promising for low power and high-density memory applications. 2.2 nm, 3 nm, and 4 nm HZO based W/HZO/IrOxdevices show 2Prvalues 13.54, 22.4, 38.23µC cm-2at 4 MV cm-1and 19.96, 30.17, 48.34µC cm-2at 5 MV cm-1, respectively, with demonstration of wake-up free ferroelectric characteristics.

Using natural language processing for identification of herpes zoster ophthalmicus cases to support population-based study.

IMPORTANCE: Diagnosis codes are inadequate for accurately identifying herpes zoster (HZ) ophthalmicus (HZO). There is significant lack of population-based studies on HZO due to the high expense of manual review of medical records. BACKGROUND: To assess whether HZO can be identified from the clinical notes using natural language processing (NLP). To investigate the epidemiology of HZO among HZ population based on the developed approach. DESIGN: A retrospective cohort analysis. PARTICIPANTS: A total of 49 914 southern California residents aged over 18 years, who had a new diagnosis of HZ. METHODS: An NLP-based algorithm was developed and validated with the manually curated validation data set (n = 461). The algorithm was applied on over 1 million clinical notes associated with the study population. HZO versus non-HZO cases were compared by age, sex, race and co-morbidities. MAIN OUTCOME MEASURES: We measured the accuracy of NLP algorithm. RESULTS: NLP algorithm achieved 95.6% sensitivity and 99.3% specificity. Compared to the diagnosis codes, NLP identified significant more HZO cases among HZ population (13.9% vs. 1.7%). Compared to the non-HZO group, the HZO group was older, had more males, had more Whites and had more outpatient visits. CONCLUSIONS AND RELEVANCE: We developed and validated an automatic method to identify HZO cases with high accuracy. As one of the largest studies on HZO, our finding emphasizes the importance of preventing HZ in the elderly population. This method can be a valuable tool to support population-based studies and clinical care of HZO in the era of big data.

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors.

It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operating voltage as well as size. In this work, we demonstrate sustained sub-60 mV/dec switching, with a minimum subthreshold swing (SS) of 6.07 mV/dec (average of 8.03 mV/dec over 4 orders of magnitude in drain current), by incorporating hafnium zirconium oxide (HfZrO2 or HZO) ferroelectric into the gate stack of a MoS2 2D-FET. By first fabricating and characterizing metal-ferroelectric-metal capacitors, the MoS2 is able to be transferred directly on top and characterized with both a standard and a negative capacitance gate stack. The 2D NC-FET exhibited marked enhancement in low-voltage switching behavior compared to the 2D-FET on the same MoS2 channel, reducing the SS by 2 orders of magnitude. A maximum internal voltage gain of ∼28× was realized with ∼12 nm thick HZO. Several unique dependencies were observed, including threshold voltage (Vth) shifts in the 2D NC-FET (compared to the 2D-FET) that correlate with source/drain overlap capacitance and changes in HZO (ferroelectric) and HfO2 (dielectric) thicknesses. Remarkable sub-60 mV/dec switching was obtained from 2D NC-FETs of various sizes and gate stack thicknesses, demonstrating great potential for enabling size- and voltage-scalable transistors.

Assessment of molecular detection of anaerobic ammonium-oxidizing (anammox) bacteria in different environmental samples using PCR primers based on 16S rRNA and functional genes.

Eleven published PCR primer sets for detecting genes encoding 16S ribosomal RNA (rRNA), hydrazine oxidoreductase (HZO), cytochrome cd 1-containing nitrite reductase (NirS), and hydrazine synthase subunit A (HzsA) of anaerobic ammonium-oxidizing (anammox) bacteria were assessed for the diversity and abundance of anammox bacteria in samples of three environments: wastewater treatment plant (WWTP), wetland of Mai Po Nature Reserve (MP), and the South China Sea (SCS). Consistent phylogenetic results of three biomarkers (16S rRNA, hzo, and hzsA) of anammox bacteria were obtained from all samples. WWTP had the lowest diversity with Candidatus Kuenenia dominating while the SCS was dominated by Candidatus Scalindua. MP showed the highest diversity of anammox bacteria including C. Scalindua, C. Kuenenia, and Candidatus Brocadia. Comparing different primer sets, no significant differences in specificity for 16S rRNA gene could be distinguished. Primer set CL1 showed relatively high efficiency in detecting the anammox bacterium hzo gene from all samples, while CL2 showed greater selectivity for WWTP samples. The recently reported primer sets of the hzsA gene resulted in high efficiencies in detecting anammox bacteria while nirS primer sets were more selective for specific samples. Results collectively indicate that the distribution of anammox bacteria is niche-specific within different ecosystems and primer specificity may cause biases on the diversity detected.

Molecular diversity and distribution of anammox community in sediments of the Dongjiang River, a drinking water source of Hong Kong.

AIMS: The aim of this study was to characterize anaerobic ammonium oxidation (anammox) community in sediments of the Dongjiang River, a drinking water source of Hong Kong. METHODS AND RESULTS: The diversity and distribution of the anammox community were investigated based on a comparative analyses of 16S rRNA and hydrazine oxidation (hzo) genes of anammox bacteria. Candidatus Brocadia and two new anammox bacterial clusters were detected based on phylogenetic analysis of 16S rRNA genes. In contrast, the targeting of hzo genes indicated the presence of only Candidatus Jettenia with four different clusters. It was found that the sequence diversities of hzo genes were higher than those of the 16S rRNA genes. The abundance of anammox bacteria varied significantly among the sediment samples based on qPCR. Pearson correlation analysis indicated that nitrite concentration was the key factor influencing the abundance of anammox bacteria. The redundance analysis (RDA) confirmed that the combination of the contents of nitrite and nitrate, and the ratio of total nitrogen vs total carbon (TN/TC) had significant impact on the anammox bacterial community structure. CONCLUSIONS: The results revealed that the diverse anammox bacteria were present in sediments of the Dongjiang River, and the community structures were associated with varied environmental factors caused by urban pollutant invasion. SIGNIFICANCE AND IMPACT OF THE STUDY: This is the first report about the distribution of anammox bacterial community in sediments of the Dongjiang River, which provides helpful information of anammox niche specificity and influencing factors in the river ecosystem.

Herpes Zoster Chorioretinopathy: A Case Series.

PURPOSE: To report two patients with herpetic zoster panuveitis and chorioretinopathy with choroidal hypopigmentation. METHODS: Retrospective chart review of two patients. RESULTS: We report a series of two patients with a history of HZO with orbital inflammation and panuveitis, who developed patchy choroidal depigmentation consistent with a choroidopathy. The lesions were extensive and involved the posterior pole and mid-periphery in both cases. Both cases demonstrated scattered areas of ellipsoid zone loss, and fluorescein angiography showed corresponding late hyperfluorescence. OCTA in one case demonstrated flow voids at the level of choriocapillaris. CONCLUSIONS: Our series suggests that herpetic chorioretinopathy may be a relatively benign process that presents late and may involve large areas of the posterior choroid.

Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia.

The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high-density, non-volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using Hf0.5Zr0.5O2 (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO2-based ferroelectrics, and establishes the design paradigm for the future evolution of HfO2-based multifunctional electronic devices.

Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe2 n-Type/p-Type Ferroelectric Field-Effect Transistor.

Spiking neural networks (SNNs) are attracting increasing interests for their ability to emulate biological processes, offering energy-efficient computation and event-driven processing. Currently, no devices are known to combine both neuronal and synaptic functions. This study presents an experimental demonstration of an ambipolar WSe2 n-type/p-type ferroelectric field-effect transistor (n/p-FeFET) integrated with ferroelectric Hf0.5Zr0.5O2 (HZO) to achieve both volatile and nonvolatile properties in a single device. The nonvolatile n-FeFET, driven by the stable ferroelectric properties of HZO, exhibits highly linear synaptic behavior. In contrast, the volatile p-FeFET, influenced by electron self-compensation in the ambipolar WSe2, enables self-resetting leaky-integrate-and-fire neurons. Integrating neuronal and synaptic functions in the same device allows for compact neuromorphic computing applications. Additionally, simulations of SNNs using experimentally calibrated synaptic and neuronal models achieved a 93.8% accuracy in MNIST digit recognition. This innovative approach advances the development of SNNs with high biomimetic fidelity and reduced hardware costs.

Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.

Ferroelectric field-effect transistors (FeFETs) are increasingly important for in-memory computing and monolithic 3D (M3D) integration in system-on-chip (SoC) applications. However, the high-temperature processing required by most ferroelectric memories can lead to thermal damage to the underlying device layers, which poses significant physical limitations for 3D integration processes. To solve this problem, the study proposes using a nanosecond pulsed laser for selective annealing of hafnia-based FeFETs, enabling precise control of heat penetration depth within thin films. Sufficient thermal energy is delivered to the IGZO oxide channel and HZO ferroelectric gate oxide without causing thermal damage to the bottom layer, which has a low transition temperature (<250 °C). Using optimized laser conditions, a fast response time (<1 µs) and excellent stability (cycle > 106, retention > 106 s) are achieved in the ferroelectric HZO film. The resulting FeFET exhibited a wide memory window (>1.7 V) with a high on/off ratio (>105). In addition, moderate ferroelectric properties (2·Pr of 14.7 µC cm-2) and pattern recognition rate-based linearity (potentiation: 1.13, depression: 1.6) are obtained. These results demonstrate compatibility in HZO FeFETs by specific laser annealing control and thin-film layer design for various structures (3D integrated, flexible) with neuromorphic applications.

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses.

Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either nonidentical or identical pulses, and with time delays between the pulses ranging from 1 µs to 10 s. Experimentally, a method for achieving nonlinear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in subthreshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 µC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93% for the same range.

Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition.

In this study, a ferroelectric layer was formed on a ferroelectric device via plasma enhanced atomic layer deposition. The device used 50 nm thick TiN as upper and lower electrodes, and an Hf0.5Zr0.5O2 (HZO) ferroelectric material was applied to fabricate a metal-ferroelectric-metal-type capacitor. HZO ferroelectric devices were fabricated in accordance with three principles to improve their ferroelectric properties. First, the HZO nanolaminate thickness of the ferroelectric layers was varied. Second, heat treatment was performed at 450, 550, and 650 °C to investigate the changes in the ferroelectric characteristics as a function of the heat-treatment temperature. Finally, ferroelectric thin films were formed with or without seed layers. Electrical characteristics such as the I-E characteristics, P-E hysteresis, and fatigue endurance were analyzed using a semiconductor parameter analyzer. The crystallinity, component ratio, and thickness of the nanolaminates of the ferroelectric thin film were analyzed via X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. The residual polarization of the (20,20)*3 device heat treated at 550 °C was 23.94 µC/cm2, whereas that of the D(20,20)*3 device was 28.18 µC/cm2, which improved the characteristics. In addition, in the fatigue endurance test, the wake-up effect was observed in specimens with bottom and dual seed layers, which exhibited excellent durability after 108 cycles.

Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory.

Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal-oxide-semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods- direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)-and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices.