Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

Calcium ions (Ca2+) are abundantly present in the human body; they perform essential roles in various biological functions. In this study, we propose a highly sensitive and selective biosensor platform for Ca2+ detection, which comprises a dual-gate (DG) field-effect transistor (FET) with a high-k engineered gate dielectric, silicon nanowire (SiNW) random network channel, and Ca2+-selective extended gate. The SiNW channel device, which was fabricated via the template transfer method, exhibits superior Ca2+ sensing characteristics compared to conventional film channel devices. An exceptionally high Ca2+ sensitivity of 208.25 mV/dec was achieved through the self-amplification of capacitively coupled DG operation and an enhanced amplification ratio resulting from the high surface-to-volume ratio of the SiNW channel. The SiNW channel device demonstrated stable and reliable sensing characteristics, as evidenced by minimal hysteresis and drift effects, with the hysteresis voltage and drift rate measuring less than 6.53% of the Ca2+ sensitivity. Furthermore, the Ca2+-selective characteristics of the biosensor platform were elucidated through experiments with pH buffer, NaCl, and KCl solutions, wherein the sensitivities of the interfering ions were below 7.82% compared to the Ca2+ sensitivity. The proposed Ca2+-selective biosensor platform exhibits exceptional performance and holds great potential in various biosensing fields.

Dark-Exciton Driven Energy Funneling into Dielectric Inhomogeneities in Two-Dimensional Semiconductors.

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through postsynthetic modifications. Here, we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten diselenide (WSe2). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

Dielectric engineering enable to lateral anti-ambipolar MoTe2heterojunction.

Atomically two-dimensional (2D) materials have generated widespread interest for novel electronics and optoelectronics. Specially, owing to atomically thin 2D structure, the electronic bandgap of 2D semiconductors can be engineered by manipulating the surrounding dielectric environment. In this work, we develop an effective and controllable approach to manipulate dielectric properties of h-BN through gallium ions (Ga+) implantation for the first time. And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga+implanted h-BN (Ga+-h-BN) is up to 1.3 V, which is characterized by Kelvin probe force microscopy. More importantly, the MoTe2transistor stacked on Ga+-h-BN exhibits p-type dominated transfer characteristic, while the MoTe2transistor stacked on the intrinsic h-BN behaves as n-type, which enable to construct MoTe2heterojunction through dielectric engineering of h-BN. The dielectric engineering also provides good spatial selectivity and allows to build MoTe2heterojunction based on a single MoTe2flake. The developed MoTe2heterojunction shows stable anti-ambipolar behaviour. Furthermore, we preliminarily implemented a ternary inverter based on anti-ambipolar MoTe2heterojunction. Ga+implantation assisted dielectric engineering provides an effective and generic approach to modulate electric bandgap for a wide variety of 2D materials. And the implementation of ternary inverter based on anti-ambipolar transistor could lead to new energy-efficient logical circuit and system designs in semiconductors.

Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure.

Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of 1s A excitons. This approach allows us to trace the energies and line widths of the atom-like 1s-2p transition of optically bright and dark excitons as well as the densities of these quasiparticles. The excitonic resonance red shifts and narrows in the WSe2/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of nonlocal screening on electron-hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.

Sub-Nanosecond 2D Perovskite Scintillators by Dielectric Engineering.

Perovskite materials have demonstrated great potential for ultrafast scintillators with high light yield. However, the decay time of perovskite still cannot be further minimized into sub-nanosecond region, while sub-nanosecond scintillators are highly demanded in various radiation detection, including high speed X-ray imaging, time-of-flight based tomography or particle discrimination, and timing resolution measurement in synchrotron radiation facilities, etc. Here, a rational design strategy is showed to shorten the scintillation decay time, by maximizing the dielectric difference between organic amines and Pb-Br octahedral emitters in 2D organic-inorganic hybrid perovskites (OIHP). Benzimidazole (BM) with low dielectric constant inserted between [PbBr6 ]2- layers, resulting in a surprisingly large exciton binding energy (360.3 ± 4.8 meV) of 2D OIHP BM2 PbBr4 . The emitting decay time is shortened as 0.97 ns, which is smallest among all the perovskite materials. Moreover, the light yield is 3190 photons MeV-1 , which is greatly higher than conventional ultrafast scintillator BaF2 (1500 photons MeV-1 ). The rare combination of ultrafast decay time and considerable light yield renders BM2 PbBr4 excellent performance in γ-ray, neutron, α-particle detection, and the best theoretical coincidence time resolution of 65.1 ps, which is only half of the reference sample LYSO (141.3 ps).

Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering.

Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO2 /h-BN, SiO2 /Al2 O3 , and SiO2 /SrTiO3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS-2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO2 /STO(300 nm) -WSe2 photodetector reach 89081 A W-1 , 2.7 × 107 %, and 1.8 × 1013 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizations and first-principle calculations, such dramatic performance improvement is associated with the promoted direct bandgap transition, reduced exciton binding energy, and PDS-induced periodic intramolecular built-in electric field across the atomically thin channels, which efficiently separates the photoexcited electron-hole pairs. More inspiringly, this strategy is also successfully exploited to 2D WS2 photodetectors, demonstrating broad applicability. As a whole, this work promises an exceptional avenue to ameliorate 2DM photodetectors and opens up a new horizon "dielectric optoelectronics," simultaneously highlighting the role of dielectric environment during analyzing the fundamentals of 2DM devices.

Dielectric Engineering Boosts the Efficiency of Carbon Nanotube Photodiodes.

Carbon nanotube (CNT) photodiodes are a promising system for high-efficiency photocurrent generation due to the strong Coulomb interactions that can drive carrier multiplication. If the Coulomb interactions are too strong, however, exciton formation can hamper photocurrent generation. Here, we explore, experimentally and theoretically, the effect of the environmental dielectric constant (εenv) on the photocurrent generation process in CNTs. We study individual ultraclean CNTs of known chiral index in a vacuum or dry nitrogen gas (εenv = 1) and oil (εenv = 2.15). The efficiency of photocurrent generation improves by more than an order of magnitude in oil. Two mechanisms explain this improvement. First, the refractive index of the environment optimizes the interference between incident and reflected light. Second, exciton binding energies are reduced in oil, changing the relaxation pathways of photoexcited carriers. We varied the axial electric field in the pn junction from 4 to 14 V/µm. Our measurements at high field indicate that autoionization of second-subband excitons can coexist with carrier multiplication. Dielectric screening makes this coexistence regime more accessible and allows us to reach photocurrent quantum yields greater than 100%.

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.